Kokusai Electric Corporation

Naoko Kitagawa

Kazuhiro Harada

Shintaro Kogura

Akihito Yoshino

Shogo Otani

Masayoshi Minami

Masaya Nishida

Kenji Kameda

Yuichi Wada

Koichi Honda

Mamoru Umemoto

Kazuhiro Shimoda

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.

Method of manufacturing semiconductor device, surface treatment method, substrate processing apparatus, and recording medium

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Method of manufacturing semiconductor device, substrate processing apparatus, and method of processing substrate

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.

A storage device includes: a sidewall formed in a cylindrical shape; a cover wall disposed at an upper end of the sidewall; a bottom wall connected to a lower end of the sidewall and comprising a mounting surface mountable on a weight detector; a storage chamber surrounded by the sidewall, the cover wall, and the bottom wall; a recess communicating with the storage chamber and provided at the bottom wall; a communication pipe having one end connected to a bottom portion of the recess in a direction of gravity and the other end extending in a direction different from the direction of gravity in the bottom wall, the communication pipe having a diameter smaller than that of the recess; a gas flow path provided at a wall other than the bottom wall; and a liquid discharge path connected to a downstream side of the communication pipe.

Storage device, vaporizer and substrate processing apparatus

Growing community of inventors

Toyama, Japan

Naoko Kitagawa