Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Haas Inc.

Naoko Kawai

Hiroyuki Nakano

Koichi Yoshida

Yasuyuki Itai

David B James

Lee Melbourne Cook

Bainian Qian

Marty W DeGroot

Naresh Kumar Penta

James T Murnane

Fengji Yeh

Masashi Teramoto

Takayuki Matsushita

Katsumasa Kawabata

Shinichi Haba

Kazutaka Miyamoto

Yoshiharu Ota

Tomoyuki Toda

Sakiko Nakashima

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Chemical mechanical polishing composition for polishing silicon wafers and related methods

A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 &#x3bc;m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.

Method for chemical mechanical polishing silicon wafers

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Kyoto, Japan

Naoko Kawai