Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Other

Ryoden Semiconductor System Engineering Corporation

Naoki Yoshimatsu

Takanobu Yoshida

Yuji Imoto

Dai Nakajima

Nobuyoshi Kimoto

Masakazu Fukada

Junji Fujino

Gourab Majumdar

Taketoshi Shikano

Osamu Usui

Masuo Koga

Noboru Miyamoto

Tatsuya Kawase

Mikio Ishihara

Akira Fujita

Shinsuke Asada

Shintaro Araki

Yusuke Ishiyama

Masayoshi Shinkai

Yoshihiro Yamaguchi

Toru Kimura

Hiroyuki Harada

Masao Kikuchi

Toshiaki Shinohara

Rei Yoneyama

Tatsuya Okuda

Hidetoshi Ishibashi

Daisuke Murata

Hiroyuki Masumoto

Haruyuki Matsuo

Sukehisa Noda

Takeshi Ohi

Yuki Yoshioka

Toshinori Yamane

Yuuji Kuramoto

Ryuuichi Ishii

Haruo Takao

Kiyohiro Uchida

Majumdar Gourab

Hiroshi Nishibori

Makoto Takehara

Masayuki Nishiyama

Hidehiro Koga

A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.

Semiconductor device comprising semiconductor element; insulating component; lead electrode; and first bonding material, second bonding material, third bonding material, and fourth bonding material made of a same material

A semiconductor device according to the present invention includes a cooler, a semiconductor package provided on an upper surface of the cooler, a metal plate having a main section provided on an upper surface of the semiconductor package, a spring that is provided above the main section and presses the main section toward the upper surface of the semiconductor package with an elastic force and a fixture that fixes the spring to an upper surface of the main section with the spring exerting the elastic force, wherein a surface, which faces the upper surface of the semiconductor package, of the main section is flat.

Semiconductor device

An object is to provide a technique capable of suppressing generation of a crack in a molding resin and suppressing entry of moisture from the outside. A semiconductor device includes a heat spreader, a semiconductor element provided on an upper surface of the heat spreader, an insulating sheet provided on a lower surface of the heat spreader, a lead frame joined to an upper surface of the semiconductor element via solder, and a molding resin that seals one end side of the lead frame, the semiconductor element, the heat spreader, and the insulating sheet. A hole is formed from an upper surface of the molding resin to a joining surface of the lead frame with the semiconductor element, and the hole is filled with a low Young's modulus resin having a Young's modulus lower than that of the molding resin.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a laminated body, a semiconductor element, and a cooler. The laminated body includes a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer. The first conductor layer, the first insulator layer, the second conductor layer, the second insulator layer and the third conductor layer are laminated. The first insulator layer is arranged between the first conductor layer and the second conductor layer, and electrically insulates the first conductor layer from the second conductor layer. The second insulator layer is arranged between the second conductor layer and the third conductor layer, and electrically insulates the third conductor layer from the second conductor layer. The semiconductor element is mounted on the first conductor layer. The cooler is connected to the third conductor layer.

Semiconductor device, semiconductor system, moving body, and method for manufacturing semiconductor device

A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

Semiconductor device comprising a resin case and a wiring member that is flat in the resin case

A base plate () includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate () is bonded to the fixed surface of the base plate (). Conductive patterns () are provided on the insulating substrate (). Semiconductor chips () are bonded to the conductive pattern (). An Al wire () connects top surfaces of the semiconductor chip () to the conductive pattern (). The insulating substrate (), the conductive patterns (), the semiconductor chips (to) and the Al wires (to) are sealed with resin (). The base plate () includes a metal part () and a reinforcing member () provided in the metal part (). A Young's modulus of the reinforcing member () is higher than a Youngs modulus of the metal part ().

Semiconductor module, semiconductor device, and vehicle

A semiconductor chip () is disposed on the insulation substrate (). A lead frame () is bonded to an upper surface of the semiconductor chip (). A sealing resin () covers the semiconductor chip (), the insulation substrate (), and the lead frame (). A stress mitigation resin () having a lower elastic modulus than that of the sealing resin () is partially applied to an end of the lead frame ().

Semiconductor device and power conversion device

First and second electrodes () are provided on an upper surface of the semiconductor chip () and spaced apart from each other. A wiring member () includes a first joint () bonded to the first electrode () and a second joint () bonded to the second electrode (). Resin () seals the semiconductor chip (), the first and second electrodes () and the wiring member (). A hole () extending through the wiring member () up and down is provided between the first joint () and the second joint ().

Semiconductor device and manufacturing method thereof

A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin.

Semiconductor device and method for manufacturing the same

A semiconductor device according to the present invention includes a plurality of semiconductor chips, a plate electrode disposed on the plurality of semiconductor chips for connecting the plurality of semiconductor chips, and an electrode disposed on the plate electrode. The electrode has a plurality of intermittent bonding portions to be bonded to the plate electrode and a protruded portion which is protruded erectly from the bonding portions. The protruded portion has an ultrasonic bonding portion which is parallel with the bonding portion and is ultrasonic bonded to an external electrode.

Semiconductor device and method of manufacturing the same

A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.

Power semiconductor device

A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.

A semiconductor device includes a conductive portion having semiconductor elements provided on a substrate, a case housing the conductive portion, and a lead terminal integrated into the case to be directly connected to the semiconductor elements or an interconnection of the substrate. The lead terminal has a stress relief shape for reliving stress generated in the lead terminal.

Entry of resin into a cylindrical electrode can be suppressed without excessively increasing the number of parts and without unnecessarily damaging members. For this purpose, a semiconductor chip and a cylindrical electrode are mounted on one main surface of substrate. The substrate, the semiconductor chip, and the cylindrical electrode are sealed with resin material such that the cylindrical electrode has one end mounted to the substrate and the other opposite end at least exposed. After the step of sealing, an opening extending from the other end of the cylindrical electrode to a cavity in the cylindrical electrode is formed. Before performing the step of forming an opening, the other end of the cylindrical electrode is closed.

Method for manufacturing semiconductor device

A circuit pattern is bonded to a top surface of a ceramic substrate. A cooling body is bonded to an undersurface of the ceramic substrate. An IGBT and a FWD are provided on the circuit pattern. A coating film covers a junction between the ceramic substrate and the circuit pattern, and a junction between the ceramic substrate and the cooling body. A mold resin seals the ceramic substrate, the circuit pattern, the IGBT, the FWD, the cooling body, and the coating film etc. The ceramic substrate has higher thermal conductivity than the coating film. The coating film has lower hardness than the mold resin and alleviates stress applied from the mold resin to the ceramic substrate. The circuit pattern and the cooling body includes a groove contacting the mold resin without being covered with the coating film.

Growing community of inventors

Tokyo, Japan

Naoki Yoshimatsu