Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Ajinomoto Co., Ltd.

Ykk Ap Inc.

Renesas Electronics Corporation

Mitsubishi Heavy Industries Limited

Renesas Technology Corp.

Nippon Shokubai Co., Ltd.

Naoki Yasuda

Teruhiko Kumada

Hideharu Nobutoki

Hajime Akiyama

Kazuhiro Shimizu

Motohisa Taguchi

Toshiyuki Toyoshima

Yuji Kawano

Tatsuya Fukami

Hiroyuki Tanaka

Masazumi Matsuura

Kazuya Hasegawa

Takeo Ishibashi

Suguru Nagae

Shigeyuki Yamamoto

Shinichi Okada

Kinya Goto

Takuya Kamiyama

Takayuki Saito

Takashi Miyamoto

Shogo Okamoto

Tetsuya Yamamoto

Manabu Yoshimura

Takahiro Tsutsumi

Yosuke Suzuki

Shinichiro Nakauchi

Kunihiko Nishimura

Hiroyuki Osuga

Takahiro Mabuchi

Takeo Tanaka

Masaki Nomura

Ryota Kusano

Hideoki Tanaka

Shiori Natori

Yasutaka Nakatani

Masashi Ono

Tadashi Shimazu

Shinichi Hosomi

Toshihiko Nishimori

Yutaka Nakamura

Hidetaka Kafuku

Satoru Sato

Satoru Kawamoto

Kenji Maekawa

Ryoko Kawano

Yoshinobu Hirokado

Yasuhiro Hayasaka

Kanji Sugino

Toshio Isono

Yukio Hidaka

Akira Ueda

Nobuo Yokomura

Toshifumi Kanri

Keiichi Katayama

Ryohei Watanabe

Yasunori Atarashi

Tadashi Miyagi

Ikuya Kawakita

Yasuhito Hibi

Michizumi Ito

Yoshitada Sakamoto

Masashi Sugawara

Toru Kanai

Toshihito Fujiwara

Kosuke Sano

Shinya Shibata

Haruo Nemoto

Michihiro Kubo

Shigeto Yoshimura

Hirokazu Ohno

Yoshihito Anzai

Azusa Osawa

Katsuhiro Otsuka

Kyuji Ihara

Masaharu Akitsu

Yasuyoshi Miyachi

In the insulation sheet, an insulation resin layer made of a thermosetting resin composition in an uncured or semi-cured state is formed on one or each of both surfaces of the base material. The thermosetting resin composition contains: a thermosetting resin (A) that is in solid form at 25° C.; a thermosetting resin (B) that is in liquid form at 25° C.; a latent curing agent that is unreactive at 60° C. or lower; and an inorganic filler having a maximum particle diameter smaller than a film thickness of the insulation resin layer and having an average particle diameter smaller than 0.5 times the film thickness. The insulation resin layer of the insulation sheet is efficiently compressed into a predetermined thickness by pressure application at normal temperature and permeates a gap between a stator core and a stator coil by heating during curing treatment, whereby both members can be insulated and fixed.

Insulation sheet and producing method therefor, and rotary electric machine

The thermosetting resin composition is used for a sheet-form insulating varnish to be disposed in a gap between insulation target members, and contains: a thermosetting resin (A) that is in solid form at 25° C.; a thermosetting resin (B) that is in liquid form at 25° C.; a latent curing agent that is unreactive at 60° C. or lower; and an inorganic filler having a maximum particle diameter smaller than a dimension of the gap and having an average particle diameter smaller than 0.5 times the dimension of the gap. 30 parts by mass to 70 parts by mass of the thermosetting resin (A) is contained per a total of 100 parts by mass of the thermosetting resin (A) and the thermosetting resin (B). A volume ratio of the inorganic filler to an entirety of the composition is not higher than 50%.

Sheet-form insulating varnish and producing method therefor, electrical device, and rotary electric machine

A power supply device (-) includes a substrate () on which an electric component () is mounted, a chassis () having a chassis surface () and a threaded part (), a chassis-side resin part () connected to a back surface () and the chassis surface (), a fixation screw (), and an insulating member (). The fixation screw () fixes both the electric component () and the substrate () to the chassis () by screw-coupling an end part () of the fixation screw (), exposed in a direction toward the chassis () from an open hole formed through the insulating member (), to the threaded part () of the chassis (). In addition, the fixation screw () brings the electric component () and the chassis () into electrical noncontact with each other by being placed in an open hole of the insulating member ().

Power supply device

A power supply device (-) includes: a substrate () on which an electric component () is mounted; a chassis () including a chassis surface () to be a surface facing one surface () of the substrate (); and cured insulating resin (-) to be placed between the one surface () of the substrate () and the chassis surface () so as to be connected to the one surface () and the chassis surface (), the cured insulating resin (-) having a thermal conductivity between 1 W/mK and 10 W/mK inclusive.

The present invention provides a solvent-free varnish composition, including: a thermosetting resin (A) having two or more (meth)acryloyl groups in a molecule thereof; a thermosetting resin (B) having one or more epoxy groups in a molecule thereof; a monofunctional vinyl-based monomer having an ether bond or an ester bond; an organic peroxide having a 10-hour half-life temperature of 40&#xb0; C. or more; and a curing catalyst for an epoxy resin, in which a mixed resin of the thermosetting resin (A) and the thermosetting resin (B) has an epoxy equivalent of from 500 to 5,000. The solvent-free varnish composition can be used as an insulating varnish that shows a small energy loss and requires a short curing time in its curing treatment step, and that provides a cured product that barely causes the precipitation of an oligomer or the like even when exposed to a refrigerant-based environment containing a refrigerant and a refrigerating machine oil under high temperature and high pressure.

Solvent-free varnish composition, insulated coil, process for producing same, rotating machine, and closed electric compressor

A coating material of the present invention includes an insulating resin, and dispersion particles dispersed in the insulating resin. The dispersion particle includes a core particle containing zinc oxide as a main component and having nonlinear resistance, and a resin layer covering the surface of the core particle and having an average thickness being less than or equal to 5.0 &#x3bc;m. The coating material of the present invention is a coating material for coating an inner surface of a ground tank of a gas insulated switchgear.

Coating material, coating film, and gas insulated switchgear

A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. 

Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film

A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein Rto Rare independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR)(OR)(OR), and at least one of Rto Ris not hydrogen atom.

Source material for preparing low dielectric constant material

A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer based on information on the drawing pattern from a wafer testing part, information on the wafer from a storage part and coordinate information from a chip coordinate recognition part. In a semiconductor device manufacturing method according to the present invention, a semiconductor device is manufactured by using the semiconductor device manufacturing apparatus in such a manner that desired circuits are formed through printing process. In the semiconductor device, pad electrodes and so on are formed in such a way that trimming process can be conducted by printing circuit drawing patterns.

Semiconductor device manufacturing method

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

Plasma CVD apparatus, method for forming thin film and semiconductor device

Semiconductor device

An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (); an electromagnetic wave is introduced into the chamber () using with an inductive coupling type plasma generation mechanism () to convert the gas into a plasma; a substrate () is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate ().

Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device

There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Semiconductor device and method of fabricating the same

Growing community of inventors

Tokyo, Japan

Naoki Yasuda