Hitachi, Ltd.

Tokyo Electron Limited

Toshiba Tec Kabushiki Kaisha

Canon Kabushiki Kaisha

Shin-etsu Chemical Co., Ltd.

Other

Kabushiki Kaisha Toshiba

Konica Minolta, Inc.

National Institute of Advanced Industrial Science and Technology

Stanley Electric Co., Ltd

Honda Motor Co., Ltd.

Konica Minolta Business Technologies, Inc.

Jfe Steel Corporation

Mitsubishi Jidosha Kogyo Kabushiki Kaisha

Mitsubishi Electric Corporation

Naoki Watanabe

Nobuo Isaka

Shigeru Ando

Tatsuo Hatano

Yutaka Momiyama

Osamu Okamoto

Masaki Sato

Seiki Furuya

Kiyoshi Hayama

Shuhei Tanaka

Takuya Hoshiko

Shinji Furukawa

Yousuke Akagi

Yasuo Kakinuma

Kazuhisa Fujimoto

Mutsumi Hosoya

Tetsuya Miyashita

Shuichiro Saigan

Osamu Watabe

Naoki Tega

Hiroki Maehara

Kentaro Shimada

Akira Kawakami

Koji Tsunekawa

Naoyuki Suzuki

Hiromi Sasaki

Shuji Nakamura

Hiroshi Miki

Yasuo Inoue

Yuichi Yagawa

Koji Miyata

Toshiharu Otsuka

Tomonori Ikumi

Nobuyoshi Watanabe

Masahiro Shibamoto

Mika Hirama

Takuya Matsuo

Masami Takahata

Yoshifumi Takamoto

Takehisa Minowa

Takeshi Takahashi

Digh Hisamoto

Naoko Iwami

Kenta Shiga

Shinji Yamagata

Shinji Yuasa

Masaki Narahashi

Katsuhisa Tsuchiya

Itaru Nishizawa

Shigeru Kishiro

Yuhito Doi

Masaru Tsukada

David Djulianto Djayaprawira

Nobutoshi Sagawa

Masato Shinada

Keisei Fujiwara

Mamoru Sugie

Shigekazu Inohara

Frederico Buchholz Maciel

Aki Tomita

Hiroaki Odawara

Hiroaki Niimi

Yuichi Taguchi

Hideki Kobayashi

Hideaki Yamamoto

Naoki Yamada

Akihiko Fujiwara

Shinji Nakagawa

Hajime Nakamura

Shinji Takagi

Hiroshi Miura

Gerrit J Leusink

Koichi Hirota

Naoki Yamamoto

Hitoshi Kakuta

Einstein Noel Abarra

Yuki Mori

Yasuhiro Ono

Toshiharu Ooe

Sou Miyazaki

Kouichi Sano

Branimir Angelov

Hiroyuki Yoshimoto

Yasuhiko Kojima

Yumiko Okuma

Kaoru Katayama

Ryuichi Suehiro

Takahiro Morikawa

Hiroyuki Toshima

Shuichi Tsujimoto

Plamen Petkov

Taku Saito

Daisuke Nakajima

Takato Watanabe

Hiroaki Takada

Yoshimitsu Kodaira

Yoshinori Nagamine

Mahina Nakamura

Koji Maeda

To realize a highly reliable IGBT that suppresses the bipolar degradation by preventing the occurrence of a defect on a boundary between a contact region and a silicide layer. As a means to realize the above, a semiconductor device includes: a collector region that is formed on a lower surface of a semiconductor substrate and forms an IGBT; and a collector electrode that is formed on a lower surface of the collector region via a silicide layer. The collector region and the silicide layer contains aluminum, first metal being more easily bondable to silicon than aluminum, and second metal being more easily bondable to carbon than aluminum.

Semiconductor device and method of manufacturing semiconductor device

Provided are methods that can prevent either or both of kinking and collapsing of a steel sheet coiled in coil form regardless of the characteristics of the steel sheet. A method of determining a tension pattern of tension applied to a steel sheet to coil the steel sheet in coil form comprises calculating the tension pattern using an apparent elastic modulus in a radial direction of a coil.

Method of determining tension pattern and method of coiling steel sheet

A method may be executed by one or more active capacitive styluses and a sensor controller connected to sensor electrodes. The method includes: a discovery step, executed by the sensor controller, of repeatedly sending out a discovery packet for detecting any of the active capacitive styluses; a discovery response step, executed by a first active capacitive stylus among the one or more active capacitive styluses, by which the discovery packet is detected, of returning a response packet to the discovery packet; a configuration step, executed by the sensor controller, of transmitting a configuration packet including time slot designation information that designates a first time slot to the first active capacitive stylus; and a data transmission step, executed by the first active capacitive stylus, of transmitting operation state data indicative of an operation state of the first active capacitive stylus using the designated first time slot.

Active capacitive stylus, sensor controller, related system and method

A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.

Film forming apparatus and film forming method

A method of forming a metal superlattice structure includes depositing, on a substrate, a layer of a first metal with face-centered-cubic (fcc) crystal structure. The method further includes depositing a layer of ruthenium (Ru) metal with fcc crystal structure on the layer of the first metal. The layer of the first metal may cause the layer of ruthenium metal to have fcc crystal structure.

Conductive superlattice structures and methods of forming the same

In the present invention, in a FinFET having a channel forming region on a surface of a fin that is a semiconductor layer protruding on an upper surface of a substrate, a channel at a corner of the fin is prevented from becoming an ON state with a low voltage and a steep ON/OFF operation is made possible. As a means thereof, in a MOSFET that has a plurality of trenches, each of which have embedded therein a gate electrode, on an upper surface of an n-type epitaxial substrate provided with a drain region on a bottom surface and that has a channel region formed on a surface of a fin which is a protrusion part between the trenches adjacent to each other, a p-type body layer that constitutes a lateral surface of the fin, and a p-type semiconductor region that constitutes a corner which is an end of the upper surface of the fin, are formed.

Trenched gate double diffused semiconductor device with channel impurity concentration adjustment region

A substrate transfer device, includes: a first planar motor installed in a first chamber and having an array of coils; a second planar motor installed in a second chamber connected to the first chamber and having an array of coils; a pair of transfer units configured to move on at least one of the first planar motor and the second planar motor and configured to transfer a substrate; and a controller configured to control supply of electric current to the coils of the first planar motor and the second planar motor.

Substrate transfer device and substrate processing system

A vacuum transfer device configured to transfer a substrate in a vacuum includes: a flat motor including a body, a plurality of electromagnetic coils arrayed in the body, and a current controller that controls a current supplied to the electromagnetic coil; a transfer unit including a substrate holder configured to hold a substrate, and a base having a plurality of magnets arrayed therein and magnetically levitating from a surface of the body by a magnetic field generated by the electromagnetic coil, and move in a magnetically levitating state thereby moving the substrate holder; and a temperature controller configured to adjust temperature of at least a portion of the body. The temperature of the transfer unit is adjusted by stopping the magnetic levitation of the base by controlling the current supplied to the electromagnetic coil, and bringing the base into contact with a temperature-adjusted portion of the body.

Vacuum transfer device, substrate processing system, and substrate processing method

A substrate transfer apparatus for transferring a substrate is disclosed. The apparatus comprises: a transfer unit including a substrate holder configured to hold a substrate, and a base having therein a magnet and configured to move the substrate holder; a planar motor including a main body, a plurality of electromagnetic coils disposed in the main body, and a linear driver configured to supply a current to the electromagnetic coils, and magnetically levitate and linearly drive the base; a substrate detection sensor configured to detect the substrate when the substrate held by the substrate holder passes by; and a transfer controller configured to calculate an actual position of the substrate held by the substrate holder based on detection data of the substrate detection sensor, calculate correction values for a logical position that has been set, and correct a transfer position of the substrate based on the correction values.

Substrate transfer apparatus, substrate transfer method, and substrate processing system

A vehicular lamp fitting and the like capable of preventing (or suppressing) vibrations of a radar unit (and as a result, capable of preventing the detection area of the radar unit from being significantly changed) are provided. A vehicular lamp fitting includes: a lamp housing; an outer lens attached to the lamp housing, the outer lens including a recessed part and forming a first space between the outer lens and the lamp housing; a lamp unit disposed in the first space; a radar cover disposed while covering the recessed part, and forming a second space between the radar cover and the recessed part; a bracket disposed in the second space; a radar unit detachably fixed to the bracket; and a first fixing part fixing one end of the bracket to the outer lens; and a second fixing part fixing the other end of the bracket to the lamp housing.

Vehicular lamp fitting and radar structure

A substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein, a transfer unit movable on the planar motor, and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

Substrate transfer apparatus and substrate processing system

A substrate transport apparatus which transports a substrate to a substrate transport position. The apparatus comprises: a transport unit including a substrate holder that holds the substrate, a base having magnets and configured to move the substrate holder, and a link member connecting the substrate holder to the base; and a planar motor having a main body, electromagnetic coils arranged in the main body, and a linear driver supplying power to the electromagnetic coils to magnetically levitate and linearly drive the base. The base includes a first member and a second member rotatably provided in the first member, and the magnets are provided inside the first member and the second member, the link member is rotatably connected to the second member, and the linear driver rotates the second member with respect to the first member and expands and contracts the substrate holder via the link member.

Substrate transport apparatus, substrate transport method, and substrate processing system

In a SiC power MISFET having a lateral surface of a trench formed in an upper surface of a SiC epitaxial substrate as a channel region, a silicon carbide semiconductor device having low resistance, high performance, and high reliability is realized. As a means therefor, a SiC power MISFET is formed as an island-shaped unit cell on an upper surface of an n-type SiC epitaxial substrate that is provided with a drain region on a bottom surface thereof, the SiC power MISFET including: an n-type current diffusion region that surrounds a p-type body layer contact region and an n-type source region in the indicated order in a plan view; a p-type body layer and an n-type JFET region; a trench that is formed on the body layer so as to span between the source region and the current diffusion region adjacent each other in a first direction and extends in the first direction; and a gate electrode embedded in the trench with a gate insulating film therebetween.

Silicon carbide semiconductor device, power conversion device, three-phase motor system, automobile, and railway vehicle

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

Film formation apparatus and film formation method

Growing community of inventors

Tokyo, Japan

Naoki Watanabe