Sumitomo Heavy Industries, Ltd.

Naoki Wakabayashi

Yasuhiro Okada

Takaomi Suzuki

Masaki Sakamoto

Masafumi Yorozu

Sadahiko Kimura

Susumu Sakuragi

An annealing object is prepared in which an absorbing film formed of a metal is formed on a surface of a wafer formed of silicon carbide into which an unactivated dopant is implanted. The dopant is activated by causing a laser beam to be incident into the absorbing film. A power density of the laser beam in a surface of the annealing object is a value with which a silicide reaction is caused to occur between the absorbing film and the wafer and a metal silicide film formed by the silicide reaction is evaporated.

Laser annealing method and laser annealing device

An annealing object is held at a position on which a laser beam output from a laser light source is incident. An infrared detector detects heat radiation light from the annealing object. An optical element which does not allow light having a wavelength shorter than 1 &#x3bc;m to be incident on the infrared detector is disposed in a pathway of the heat radiation light from the annealing object to the infrared detector.

Laser annealing apparatus

A first laser pulse emitted from a semiconductor laser oscillator and having a first pulse width is entered onto a second surface of a semiconductor substrate in which a semiconductor device is formed on a first surface and dopants are added to a surface layer portion on the second surface side. A second laser pulse having a second pulse width less than or equal to 1/10 of the first pulse width is entered on an incident area of the first laser pulse in an overlapping manner. The relative positional relationship on a time axis between falling time of the first laser pulse and rising time of the first laser pulse is set such that the temperature of the first surface, which rises due to the incidence of the first laser pulse and the second laser pulse, does not exceed an allowable upper limit value which is predetermined.

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Kanagawa, Japan

Naoki Wakabayashi