Hamamatsu-photonics K.k.

Kabushiki Kaisha Atsumitec

Atsumitec Co., Ltd.

Canon Kabushiki Kaisha

National Institute of Advanced Industrial Science and Technology

Resonac Corporation

Kyoritsu Chemical Co., Ltd.

Atsumiiec Co. Ltd.

Kabushiki Kaisha Asumitec

Naoki Uchiyama

Kenshi Fukumitsu

Fumitsugu Fukuyo

Toshimitsu Wakuda

Yoshimaro Fujii

Ryuji Sugiura

Kazuhiro Atsumi

Takeshi Sakamoto

Kenichi Muramatsu

Tomomi Kanai

Kazuya Kubo

Yuta Kondoh

Hideki Shimoi

Kazumi Harada

Daisuke Kawaguchi

Yasuyuki Uchiyama

Seigou Nakabayashi

Kenji Kato

Masayoshi Kumagai

Kazuki Yoshimura

Daisuke Kurita

Takafumi Ogiwara

Norio Kurita

Yuzuru Kokido

Keizo Kobayashi

Masashi Mikami

Etsuji Ohmura

Naoki Matsuda

Hiroyuki Matsumoto

Hidefumi Kinda

Mikiharu Kuchiki

Toshiyuki Nishio

Fumitsugu Fukoyo

Fumitsgu Fukuyo

A packing material, wherein to a porous organic polymer carrier including 60 to 95 mol % of a repeating unit derived from glycidyl methacrylate and 5 to 40 mol % of a repeating unit derived from a polyfunctional monomer, one end of at least one alkylene group selected from a linear alkylene group, a cycloalkylene group, and a linear alkylcycloalkylene group, having 4 to 9 carbon atoms is bonded by a glycidyl group derived from glycidyl methacrylate, and an other end of the alkylene group is bonded to any one end of a polyol via an ether bond.

Packing material and method for producing the same, and column for size exclusion chromatography

An apparatus includes an openable and closable cover, a movable member disposed in the apparatus main body and to be exposed outside when the cover is opened, an openable and closable support member that supports the movable member, and a support shaft that supports the cover and the support member. The movable member and the support member are moved together with the cover as the cover rotates about the support shaft. The support shaft can move between a first position at which the support shaft supports the cover and the support member and a second position at which the support shaft does not support the cover and supports the support member. Moving the support shaft to the second position allows the cover to be detached from the apparatus main body.

Apparatus having a replaceable cover

A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

Laminated element manufacturing method

A object cutting method includes a first step of attaching an expandable sheet to a front surface or a back surface of a object, a second step of irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object, a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object, a fourth step of, after the third step, curing and shrinking the resin, and a fifth step of, after the fourth step, taking out the chips from the expandable sheet.

Workpiece cutting method

A thermoelectric power-generation device includes: a first flow path through which a high-temperature medium flows; a second flow path through which a low-temperature medium that has a temperature difference with respect to the high-temperature medium flows; an insulating isolation plate configured to isolate the first flow path from the second flow path; insulating outer layer isolation plates provided at outermost portions of layered flow paths including the first flow path and the second flow path; a plurality of thermoelectric conversion units configured to generate power using the temperature difference; and electrodes provided at the outer layer isolation plates and configured to connect the thermoelectric conversion units with mutually different semiconductor polarities in series, and the thermoelectric conversion units are disposed so as to straddle the first flow path and the second flow path.

Thermoelectric power-generation device

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substratehaving a front faceformed with functional deviceswith laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear faceof the semiconductor substrateafter the step of forming the starting point region for cutting such that the semiconductor substrateattains a predetermined thickness.

Substrate dividing method

An exhaust-gas electricity generation unit is provided between an engine unit and a discharge unit. The exhaust-gas electricity generation unit includes a connecting pipe connecting the engine unit to the discharge unit and defining an exhaust-gas flow passage in which exhaust gas expelled from the engine unit flows, a plurality of thermoelectric conversion modules provided on an inner surface of the connecting pipe, along flow of heat, near the engine unit and near the discharge unit, and a flow-velocity increasing mechanism for causing the exhaust gas in the connecting pipe to have an increased flow velocity near the discharge unit than near the engine unit.

Thermoelectric conversion unit, thermoelectric conversion module, and exhaust-gas electricity generation unit

A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein at pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Laser processing method and laser processing apparatus

The system comprises a steam reforming unit to produce hydrogen from exhaust gas supplied, a hydrogen permeable membrane to allow only hydrogen produced by the steam reforming unit to pass through it, a hydrogen storage unit to absorb hydrogen supplied through the hydrogen permeable membrane and release absorbed hydrogen, a fuel cell to generate power using hydrogen supplied from the hydrogen storage unit, a gas clean-up unit to clean up residual gases delivered not passing through the hydrogen permeable membrane, and a control unit to control the hydrogen storage unit to absorb or release hydrogen depending on whether the fuel cell is supplied with sufficient hydrogen.

Exhaust gas clean-up system equipped with power generating function

A power generatorincludes: a fuel electrodethat receives a supply of fuel gas; an air electrodethat receives a supply of air; an electrolyte layerdisposed in between the fuel electrodeand the air electrode; a gas flow channelthat circulates therein the fuel gas or the air, with the fuel electrodeor the air electrodebeing exposed to at least part of the gas flow channel; a porous bodyfilled in the gas flow channel; and a porous sheetpresent in contact with the porous bodyand the fuel electrodeor the air electrode, the porous sheetbeing made of a material having electrical conductivity, the material having pores formed to spread in a uniform manner, the pores being larger in diameter than pores formed in the porous body

Power generator

A silicon substratehas a main face in a (100) plane, whereby a fracturegenerated from a molten processed regionacting as a start point extends in a cleavage direction of the silicon substrate(a direction orthogonal to the main face of the silicon substrate). Here, a rear faceof an object to be processedA and a front faceof an object to be processed for separationA are bonded to each other by anode bonding, whereby the fracturereaches a front faceof the objectA continuously without substantially changing its direction. When generating a stress in the object for separationA, the fracturehas reached a rear faceof the object for separationA and thus easily extends toward the objectA.

Method for cutting object to be processed

Growing community of inventors

Hamamatsu, Japan

Naoki Uchiyama