The Furukawa Electric Co., Ltd.

The Furukawa Manufacturing Co., Ltd.

Naoki Tsukiji

Junji Yoshida

Toshio Kimura

Masaki Funabashi

Takeshi Aikiyo

Satoshi Irino

Keishi Takaki

Yutaka Ohki

Tsuyoshi Wakisaka

Hidehiro Taniguchi

Masashi Nakae

Hiroshi Shimizu

Shu Namiki

Hiroshi Matsuura

Takeo Shimizu

Norihiro Iwai

Yasumasa Kawakita

Takeshi Higuchi

Tomoaki Toratani

Toshiro Yamamoto

Suguru Imai

Mieko Konishi

Satoshi Koyanagi

Naoki Kimura

Masayuki Iwase

Yoshihiro Emori

Akihiko Kasukawa

Yutaka Oki

Tsuyoshi Saito

Takeo Kageyama

Hirokazu Itoh

Jun Niekawa

Naoki Hayamizu

Takashi Koseki

Koji Hiraiwa

Ryuichiro Minato

Takehiro Shirai

Keiichi Yabusaki

Koichi Toyosaki

Masayoshi Seki

Kohei Tsunetomo

Young Duk Yoon

Sakiko Sugihara

Souko Kado

Kouhei Terada

Akifumi Nakajima

Akira Iketani

Hiroyuki Aida

Harunobu Ikeda

Masako Kobayakawa

Hitoshzi Shimizu

There is provided an optical interconnection system including a plurality of semiconductor integrated devices each including a surface emitting laser array device including a plurality of surface emitting laser devices each emitting an output laser signal light of a different wavelength modulated based on an input modulated signal, a silicon optical waveguide that guides output laser signal lights emitted from the surface emitting laser devices of each of the semiconductor integrated devices to another semiconductor integrated device, a plurality of optical couplers respectively corresponding to the semiconductor integrated devices and guiding the output laser signal lights to the silicon optical waveguide, and a plurality of optical splitters respectively corresponding to the semiconductor integrated devices, receiving the output laser signal lights guided by the silicon optical waveguide, and inputting an input laser signal light to a corresponding one of the semiconductor integrated devices.

Optical interconnection system

A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

Optical semiconductor device and pumping light source for optical fiber amplifier

A surface emitting laser apparatus includes an arithmetic processing unit including an I/O unit for externally inputting an instruction and a core unit that performs an operation based on the instruction and outputs a differential voltage signal modulated with a predetermined amplitude according to a result of the operation, capacitors respectively arranged on output paths of the differential voltage signal, and a surface emitting laser device that is directly connected to the arithmetic processing unit via the capacitors. An I/O voltage and a core voltage are externally supplied to the I/O unit and the core unit, respectively. The arithmetic processing unit generates a driving voltage signal by superimposing the differential voltage signal with the core voltage commonly supplied as a bias voltage without stepping up or down the core voltage and without amplifying the differential voltage signal and supplies the driving voltage signal to the surface emitting laser device.

Vertical cavity surface emitting laser apparatus

A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.

Semiconductor light emitting element and manufacturing method thereof

Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.

Surface emitting laser element array

A first light feedback element is arranged at an optical distance Lfrom a front facet of a semiconductor laser from which an output light is emitted on an optical path of the output light. An i-th light feedback element is arranged at an optical distance Li from the front facet on the optical path of the output light, where i=2 to n, n is a positive integer not less than 2, and Li&#x3e;L. Land Li satisfies ((M&#x2212;1)+0.01)&#x3c;(Li/L)&#x3c;(M&#x2212;0.01), where M is a positive integer not less than 2, satisfying (M&#x2212;1)&#x3c;(Li/L)&#x2266;M.

Semiconductor laser device

A tunable multimode wavelength division multiplex Raman pump and amplifier, and a system, method, and computer program product for controlling a tunable Raman pump and amplifier. The tunability of the pump source is accomplished by controlling the optical output and central wavelengths of tunable semiconductor laser devices. The system includes a microprocessor-based controller that monitors an amplifier's performance and adjusts the drive current and/or wavelength of the tunable pumps of an amplifier to achieve a target performance.

Tunable multimode wavelength division multiplex Raman pump and amplifier, and a system, method, and computer program product for controlling tunable Raman pumps, and Raman amplifiers

A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.

Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module

An n-Inp buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are laminated on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are provided to be adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer and the p-InP spacer layer. A p-InP cladding layer, a p-GaInAsP contact layer, and a p-side electrode are laminated on the p-InP spacer layer and the n-InP blocking layer, and an n-side electrode is arranged on a rear surface of the n-InP substrate. A diffraction grating that selects light having the number of oscillation longitudinal modes of not less than 10, more preferably not less than 18, oscillation longitudinal modes the difference values of which in optical intensity from the oscillation longitudinal mode having the highest optical intensity are not more than 10 dB, is arranged in the p-InP spacer layer.

Semiconductor laser apparatus, semiconductor laser module, optical fiber amplifier and semiconductor laser usage determining method

The present invention has a lower cladding layer, a lower SCH layer, a quantum well layer, an upper SCH layer, and a first upper cladding layer sequentially laminated on a substrate. A striped-pattern second upper cladding layer that has a longitudinal direction in a laser beam emission direction, and a current blocking layer are laminated on the first upper cladding layer. A third upper cladding layer and a contact layer are laminated sequentially on the second upper cladding layer and the current blocking layer respectively. The current blocking layer has a conduction type different from that of the second upper cladding layer. An effective index of an area that includes the current blocking layer is lower than the same of an area that includes the upper cladding layer.

Semiconductor laser device, semiconductor laser module, and optical fiber amplifier

An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP cladding layer, p-InGaAsP contact layer and a p-side electrode are laminated sequentially on an n-InP substrate. Moreover, a film having high reflectivity is laminated on a reflection side end surface, and a transmission film is laminated on an emission side end surface. The transmission film has a first film and a second film. The second film is composed of an equivalent film composed of three layers.

Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity

A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 &#x3bc;m is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.

Semiconductor laser device and optical fiber amplifier using the same

In a semiconductor laser device having a GRIN-SCH-MQW structure, attention is paid to correlation among a lasing wavelength, a refractive index difference between an equivalent refractive index in a region including an active layer and an equivalent refractive index in a region including current blocking layers, and a composition of a barrier layer having a quantum well structure. By finding out an optimum combination of these three parameters, a width of the active layer is made wider than a conventional width, thus preventing occurrence of a kink due to horizontal transverse mode in the active layer.

Semiconductor laser device and semiconductor laser module

A semiconductor laser element is fixed onto a submount by forming a metallic thin film at a region on a surface of a p-side electrode of the semiconductor laser element. A periphery of the thin metallic thin film is recessed from a periphery of the p-side electrode by a predetermined width. The metallic thin film is thermally processed together with the p-side electrode for increasing a size of the grains and connected through a solder layer to the submount. Parts of the p-side electrode and the submount, the metallic thin film and the solder layer include Au for improving a cushion function of the semiconductor laser device.

Semiconductor laser device with a strain reduction cushion function, semiconductor laser module, and semiconductor laser device fabrication method

A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress SBS.

Semiconductor laser module and method for simultaneously reducing relative intensity noise (RIN) and stimulated brillouin scattering (SBS)

Growing community of inventors

Tokyo, Japan

Naoki Tsukiji