Shionogi Company Limited

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Hoya Corporation

Naoki Tsuji

Eiji Kondo

Kentaro Tanaka

Kouichi Matsumoto

Yoshimi Kawamura

Jun'ichi Shoji

Tadashi Yoshida

Kiyoteru Kobayashi

Koichi Matsumoto

Takaharu Nakajima

Satoshi Shimizu

Osamu Sakamoto

Kojiro Yuzuriha

Akinobu Teramoto

Yohei Sawada

Takao Konishi

Toshiyuki Kamigauchi

Naho Nishioka

Shinzo Matsuura

Kazutoshi Wakao

Yoshiyuki Hayashi

Teruo Hattori

Mikao Mayama

Masaaki Kobayashi

Kazuo Nagashima

There is provided a contact lens having a convex front surface and a concave rear surface, the front surface being divided into an optical portion, an edge joining the front and rear surfaces, a first smoothing portion arranged on an outer periphery of the optical portion, a peripheral portion arranged on an outer periphery of the first smoothing portion, and a second smoothing portion connecting the peripheral portion and the edge, the front surface having mirror image symmetry with respect to a vertical meridian as a boundary extending from an upper end of the lens to a lower end of the lens passing through a midpoint of the lens, and having mirror image symmetry also with respect to the horizontal meridian perpendicular to the vertical meridian at the lens midpoint, the peripheral portion being arranged to include the horizontal meridian, and configured of: a first peripheral portion arranged to include the horizontal meridian and having a shape so as to maximize a thickness of the contact lens on the horizontal meridian, a second peripheral portion arranged to include the vertical meridian and having a shape so as to minimize the thickness of the contact lens on the vertical meridian, a first peripheral auxiliary portion which is a portion adjacent to the first peripheral portion, having a surface shape so as to keep the thickness of the contact lens constant; and an inclined portion which is a portion connecting the first peripheral auxiliary portion and the second peripheral portion to form a continuous surface, and having a surface shape that changes the thickness of the contact lens.

Contact lens and method for manufacturing the same

A toric contact lens having a prism ballast structure, wherein a center optical area, an annular transition area surrounding the center optical area determining a refractive degree, and an annular peripheral area surrounding the transition area, are defined on a lens front surface. A shape of the lens front surface has a mirror symmetry with a vertical meridian as a boundary, in such a manner that a thickness is smoothly decreased toward a lens lower end portion from two maximum thickness portions and where the thickness of the lens is maximum, and a valley-shaped slab-off is formed between these maximum thickness portions.

Toric contact lens and method for manufacturing the same

A semiconductor memory device includes: a silicon substrate having a main surface; ndiffusion layers formed on the main surface of the silicon substrate distanced from each other; HDP oxide films formed on the ndiffusion layers and deposited on the main surface so as to protrude above the main surface; an ONO film (a stacked film of an oxide film, a nitride film, and an oxide film) as a charge holding layer formed between the HDP oxide films; and a gate electrode (a polysilicon film and a doped polysilicon film) extending over the ONO film and the HDP oxide films.

Semiconductor memory device and manufacturing method thereof

In a non-volatile semiconductor memory device, three-layered structure of the first, second and third floating gate electrodes is implemented, and stepped portions are provided on the first interlayer insulating film surrounding the first floating gate electrode. The position of the bottom surface of the second floating gate electrode can be disposed higher than that of the upper surface of the first floating gate electrode. Consequently, compared with overlapping area of the floating gate electrode with a control gate electrode in a conventional non-volatile semiconductor device, it can be increased by the length of stepped portions on the first interlayer insulating film. Film thickness as floating gate electrode will not be as thick as conventional structures. Overlapping area of the floating gate electrode with the control gate electrode can be sufficiently secured without a portion with the maximum film thickness of floating gate electrode being larger.

Non-volatile semiconductor memory device and manufacturing method thereof

A semiconductor device includes a trench isolating elements, a memory cell transistor and a peripheral circuit Vcc transistor having a thermal oxide film of a first thickness, and a peripheral circuit Vpp transistor including a thermal oxide film and a thermal oxide film formed before trench formation, having a second thickness greater than the first thickness.

Method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

A nonvolatile semiconductor memory device capable of readily distinctively forming transistors in a peripheral circuit part and a transistor in a memory cell part while minimizing the number of times of high-temperature heat treatment are obtained. In the peripheral circuit part, at least one of a first transistor and a second transistor has a lower conductive layer having the same perpendicular structure as a floating gate, an intermediate insulator film including an insulator film of the same perpendicular structure as an inter-gate isolation film and an upper conductive layer of the same perpendicular structure as a conductive layer of a control gate in ascending order on a gate insulator film thereof, and the intermediate insulator film includes a conduction part electrically connecting the upper conductive layer and the lower conductive layer with each other.

Nonvolatile semiconductor memory device with peripheral circuit part comprising at least one of two transistors having lower conductive layer same perpendicular structure as a floating gate

The invention provides a nonvolatile semiconductor device, or the like. According to the fabrication process of the present invention, silica glass containing boron or phosphorous is used as a material of high absorbency, which is treated in the vapor phase HF atmosphere and, therefore, selective etching of silica glass, only, of high absorbency becomes possible so that a void area can be formed beneath the fin of the floating gate. Accordingly, the absolute value of the parasitic capacitance between the floating gate and the substrate is decreased. In addition, the degree of the fluctuation of the parasitic capacitance due to the manufacturing process can be restricted to a low level. Accordingly, a nonvolatile semiconductor device of high performance can be gained without lowering the yield.

Nonvolatile semiconductor device

A non-volatile semiconductor memory device allowing accurate reading of data, having superior charge detection characteristic and high rewriting durability, and free of undesirable writing of a non-selected memory cell transistor is provided. A memory cell transistor includes a silicon substrate having a main surface, a plurality of strip shaped isolating oxide films and formed on the main surface of silicon substrate to continuously extend approximately along the < > direction, and strip shaped source and drain regions and formed on the main surface of silicon substrate to continuously extend approximately along the < > direction.

A method for producing a non-volatile semiconductor memory device, comprising the steps of providing a semiconductor substrate having a surface; forming trench isolations on the substrate, the trench isolations being projected from the surface; forming source and drain regions between the neighboring trench isolations, so that the source and drain regions are faced each other across a channel region; and forming a floating gate electrode on the channel region through a tunnel film which is formed on the channel region.

Method for producing non-violatile semiconductor memory device and the device

Providing a method of producing a semiconductor device and a structure of the semiconductor device employing a trench isolation structure for isolating semiconductor elements wherein volumetric expansion of a trench-filling material due to oxidation process after forming the trench isolation structure is controlled thereby making it possible to prevent deterioration of the electrical characteristics of the semiconductor device. A nitriding treatment is applied to the trench surface of the silicon substrate after forming the trench by etching, thereby to form a thin nitride layer having a better effect of preventing oxidation in the interface of silicon.

Semiconductor device having a nitride barrier for preventing formation of structural defects

Glycopeptide antibiotics PA-45052 which are produced by Nocardia orientalis PA-45052, show potent activity against gram-positive bacteria, especially against methicillin-resistant bacteria, and stimulate growth of animals.

Glycopetide antibiotic PA-45052-B

The compounds of the formula: ##STR1## wherein R is ##STR2## or H, wherein X is NH.sub.2 and Y is CH.sub.3 ; or X is OH and Y is H, and their pharmaceutically acceptable salts. The compounds have a potent activity against gram-positive bacteria, especially, methicillin-resistant bacteria.

Novel glycopeptide antibiotics

Antibiotics PA-41746-A.sub.2, PA-41746-E and PA-41746-F produced by fermentation of Streptomyces pluracidomyceticus on a conventional culture medium, having .beta.-lactamase inhibitory activities and excellent antimicrobial activities, and useful as drugs for treatment of infections in humans or animals, or as disinfectants.

Carbapenem-type antibiotics

A compound of the formula: ##STR1## wherein R is carboxymethylthio, dihydroxymethylthio or hydroxymethylsulfinyl and the pharmaceutically acceptable salts being useful as a medicament and a veterinary drug for inhibiting the growth of gram-positive and gram-negative phathogenic microorganisms with .beta.-lactamase inhibitory activity and a process for preparing the same.

Growing community of inventors

Hyogo, Japan

Naoki Tsuji