Tokyo Electron Limited

Tokyo Electron Limi Ted

Naoki Tamaru

Yasuharu Sasaki

Shoichiro Matsuyama

Hidetoshi Hanaoka

Kyo Tsuboi

Shuhei Yamabe

Yusuke Hayasaka

Keisuke Yoshimura

Shintaro Ikeda

A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.

Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

Plasma processing apparatus

There is provision of a plasma processing apparatus including a processing vessel, a first member provided in the processing vessel, and a second member provided outside the first member. In at least one of the first member and the second member, a gas flow passage is formed, and the gas flow passage is configured to cause a gas to flow into a gap between the first member and the second member.

Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.

Growing community of inventors

Miyagi, Japan

Naoki Tamaru