Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Tokyo Electron Limited

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

L'air Liquide

Naoki Tamaoki

Yuusuke Sato

Takashi Ichikawa

Akio Ui

Hisataka Hayashi

Toshiro Takase

Takako Kimura

Akihiro Kojima

Christian Dussarrat

Jean-Marc Girard

Shinji Himori

Jun Abe

Shinichi Tatsuta

Norikazu Yamada

Toshimitsu Ohmine

Takeshi Ohse

Hiroshi Komiyama

Jun Sonobe

Takashi Kataoka

Takeshi Kaminatsui

Takamitsu Shigemoto

Toshimitu Ohmine

Yasuyuki Egashira

A topography simulation apparatus includes a processor and a memory connected to the processor. The memory stores instructions executable by the processor to set a function indicating a position relationship between a point in a calculation region and a material surface in the calculation region. The memory stores further instructions executable by the processor to determine whether or not a particle moving in the calculation region collides with the material surface, and update a value of the function, responsive to determining that the particle collides with the material surface.

Topography simulation apparatus, topography simulation method, and topography simulation program

In one embodiment, a topography simulation apparatus includes a division module to divide a calculating area for calculating topography of a substance into cells and express the topography using filled cells and vacant cells, and a calculation module to calculate a filling rate for a target cell based on processing rates for its neighboring cells. The calculation module calculates, based on the processing rates for the neighboring cells, contributing rates of the neighboring cells contributing to the filling rate for the target cell. The calculation module calculates, based on the contributing rates of the neighboring cells, the filling rate for the target cell. One of the contributing rates of the neighboring cells of the target cell depends on whether another neighboring cell of the target cell is a first cell whose filling ratio belongs to first range or a second cell whose filling ratio belongs to second range.

Topography simulation apparatus, topography simulation method and recording medium

A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

Substrate plasma processing apparatus and plasma processing method

A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

Simulating a chemical reaction phenomenon in a semiconductor process

A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

Plasma processing apparatus of substrate and plasma processing method thereof

A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.

Simulation method and simulation program

A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.

Method of cleaning a film-forming apparatus

Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600&#xb0; C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition

The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.

Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process

A wafer having a recess with an aspect ratio of 0.5 or above on a surface to be processed is placed on a holder provided within a process chamber. A process gas consisting of a mixture of a material gas of SiH.sub.4 and a carrier gas of H.sub.2 is uniformly supplied to the surface of the wafer vertically. The pressure within the process chamber is set at 1 Torr or above. The temperature of the surface to be processed of the wafer is set at 600.degree. C. to 800.degree. C. Under these conditions, a polysilicon film is formed in the recess by a vapor phase growth method. During the formation of the film, the wafer is rotated at 500 rpm or above by an output of a motor via a holder. Thereby, a high film formation rate and a good step coverage can be made compatible.

Method of forming a film in recess by vapor phase growth

A simulation method for performing a simulation with respect to a trace object that an event occurs depending on a probability in a domain to be analyzed. The simulation method includes the step of dividing a flowing field into cells serving as domains to be analyzed, the step of arranging molecules serving as the target object in the cells, the step of performing the simulation such that the molecules are moved in the cells and the number of stickings or a sticking amount occurring on a wall surface or a film portion as the result of the movement larger than the number of times of the event or a change amount led by the probability, and the step of outputting, as a simulation result, a film profile obtained as the result of the simulation.

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Tokyo, Japan

Naoki Tamaoki