Tokyo Electron Limited

Rikagaku Kenkyusho

Naoki Takayama

Kohei Kawamura

Daisuke Hayashi

Akira Koshiishi

Jun Ozawa

Nobuyuki Okayama

Koichi Kazama

Hidehito Saegusa

Masahiko Matsudo

Nobuo Ishii

Hideaki Sato

Masayuki Tomoyasu

Tamio Hara

Hiroo Ono

Yoshinobu Aoyagi

Shuji Kikuchi

Hisato Tanaka

Satoshi Harada

Hin Oh

Susumu Namba

Manabu Hamagaki

Yuichi Mimura

Riki Tomoyoshi

Hisanori Sakai

Bin Wang

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

Processing system

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

With analysis data in the prior art, it is difficult to find out if a change regarded as a judgmental standard of the completion of seasoning has come from a change due to the seasoning, namely, change in condition of the interior of a processing container or come from another change based on a temperature change among respective dummy wafers and furthermore, it is difficult to judge whether the seasoning has been completed or not. Therefore, a plasma processing method of the present invention, which is a method for detecting the completion of seasoning in performing the seasoning by loading dummy wafers W into a processing containerof a plasma processing apparatusincludes a process of creating a predictive formula for predicting the completion of seasoning and another process of detecting the completion of seasoning in performing the seasoning, based on the predictive formula. The creation of the predictive formula is accomplished by performing a multivariate analysis against a plurality of measured data that can be obtained by first supplying dummy wafers W into the processing containercooling down the interior of the processing containerand supplying a plurality of dummy wafers W into the processing containeragain.

Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

In a plasma processing method and apparatus for monitoring information on a plasma processing, a multivariate analysis is performed by using as analysis data detection values detected for each object to be processed from a plurality of detection devices disposed in the processing apparatus upon the plasma processing. At that time, for each of sections defined whenever a maintenance of the processing apparatus is carried out, the detection values detected by the detection devices in the respective sections are compensated through a compensation unit, and the compensated detection values are taken as the analysis data.

Plasma processing method and plasma processing apparatus

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

A system for implanting ions into a semiconductor wafer includes an ion source device, a mass spectrometer, an accelerating tube and a process chamber arranged in this order. A rotating disk is arranged in the process chamber to support a plurality of wafers thereon. A Faraday cup is arranged in the process chamber, corresponding to an ion beam shooting position. The Faraday cup serves to shut up therein secondary electrons and ions generated from the wafer at the time of ion implantation for measuring the amount of ions implanted. A suppressor electrode is provided to suppress the flow-out of the secondary electrons from the Faraday cup. The suppressor electrode comprises a cylindrical body made of carbon and an SiC film formed on the inner face of the cylindrical body. The SiC film serves as a resistance of the electrode surface for preventing rapid discharge from being caused at the electrode surface.

Ion implantation system

Electric discharge gas is made into auxiliary plasma in an electron generating chamber and electrons in the generated auxiliary plasma are introduced into an ion generating chamber. Electrons collide with molecules of material gas in the ion generating chamber to generate primary plasma. Ions in the ion generating chamber are drawn out of the primary plasma through an opening of the ion generating chamber. A magnetic field is formed by electromagnets in order to bring the plasma in the ion generating chamber into a concentrated state. A control unit is provided to store data representing optimum magnetic field intensities for ions of different types involved. The control unit so controls current applied by the power supply for the electromagnets as to produce an optimum magnetic field intensity for the type of ions to be drawn.

Ion implantation system using optimum magnetic field for concentrating

A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.

Plasma processing apparatus

An ion generator comprises an electron-generating chamber and an ion-generating chamber. Ions are generated by introducing a raw material gas into the ion-generating chamber and irradiating the raw material gas with electrodes generated in the electron-generating chamber. The ions, thus generated, are drawn by ion-collecting electrodes and guided out of the ion-generating chamber through a slit formed in the ion output section of the ion-generating chamber. That corner of the ion-generating chamber which faces the ion-collecting electrodes is curved, and that outer wall of the ion-generating chamber which faces the ion-collecting electrodes is specular. With this structure, an undesirable spark discharge does not easily take place with reference to the ion-collecting electrodes, so that damage to the structural components of the ion generator is suppressed. Further, the ion output section is removable from the main body of the ion-generating chamber. Therefore, only the ion output section can be replaced with a new one, if it is worn out.

Ion generator

In an ion generating apparatus, an acceleration power source, a discharge power source and a filament power source can be controlled, and the following steps are automatically in a programmed manner forming a magnetic field in an electron path, supplying a material, applying voltage and causing an electric discharge.

Ion generating apparatus

An electron beam excitation ion source includes a housing having an ion generation chamber therein, a port for supplying a discharge gas to the ion generation chamber, a porous electrode for supplying accelerated electrons to the ion generation chamber from an electron generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing have an ion extraction slit port through which the ions are extracted from the ion generation chamber outside the housing. An electrode is formed around the ion extraction port, for causing a local discharge around the ion extraction port so as to guide the ions in the plasma to the ion extraction port.

Electron beam excitation ion source

An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing includes an ion extraction port through which the ions are extracted from the ion generation chamber outside the housing and an electron reflecting member exposed in the ion generation chamber to reflect the electrons.

An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.

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Kofu, Japan

Naoki Takayama