Nitto-denko Corporation

Matsushita Electric Industrial Co., Ltd.

Rohm Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Naoki Takahashi

Kazuyuki Murata

Kazutaka Hara

Hideyuki Kuwano

Kentarou Takeda

Hironori Motomura

Tadayuki Kameyama

Yuji Okada

Kenji Hisatomi

Takehito Yamaguchi

Miki Shiraogawa

Joji Tanaka

Toru Takuma

Shuntaro Takahashi

Takahiro Fukuoka

Hisashi Mihara

Seiji Umemoto

Yasuhiro Kuwahara

Akio Kojima

Ikuo Kawamoto

Shunsuke Shutou

Satoru Kawahara

Takashi Nakanishi

Akira Shimizu

Mitsuru Okazaki

Akinobu Okuda

Kazumasa Hayashi

Akinori Toyoda

Tsuyoshi Chiba

Masaki Omi

Koichiro Fujita

Hideki Yasuda

Muga Imamura

Yohei Okuno

Masao Ootsuka

Youichi Kajiwara

Katsuhiko Kishimoto

Minoru Miyatake

John Kevin Twynam

Yoshitsugu Kitamura

Kazuya Hada

Kenichi Nakata

Mariko Hirai

Masafumi Shimizu

Yoshiteru Ishimaru

Takeyuki Ashida

Kazuhiko Shirakawa

Takuya Mori

Hideyuki Yonezawa

Nobuyuki Matsumoto

Yu Zhu

Yoshinori Motouchi

Shoji Sugiura

Takio Imai

A semiconductor devicehas a power transistor Nof vertical structure and a temperature detection elementconfigured to detect abnormal heat generation by the power transistor N. The power transistor Nincludes a first electrodeformed on a first main surface side (front surface side) of a semiconductor substrate, a second electrodeformed on a second main surface side (rear surface side) of the semiconductor substrate, and pads-positioned unevenly on the first electrode. The temperature detection elementis formed at a location of the highest heat generation by the power transistor N, the location (near the padwhere it is easiest for current to be concentrated) being specified using the uneven positioning of the pads-

Semiconductor device

In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (&#x221d; Iref) and a second set value (&#x221d; Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (&#x221d; Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.

Overcurrent protection circuit

An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.

A semiconductor device has an N-type substrate, a through conductor penetrating the N-type substrate, a protection target circuit provided on the N-type substrate, and an ESD protection circuit provided on the N-type substrate. The protection target circuit and the ESD protection circuit are connected together to the through conductor.

In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (&#x221d;Iref) and a second set value (&#x221d;Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (&#x221d;Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.

A protection circuit includes: a high-side switch connected to a power terminal to which a predetermined power supply voltage VBB is supplied from an onboard battery; and an NMOS transistor MTconnected to the high-side switch and configured to prevent an electrical conduction to the high-side switch when the onboard battery is reverse-connected to the power terminal, wherein a semiconductor integrated circuit is protected from a breakdown due to the reverse connection of the external power supply. A semiconductor integrated circuit apparatus includes the above-mentioned protection circuit configured to protect a semiconductor integrated circuit connected between the power terminal and the ground terminal, from an electro-static discharge breakdown. The protection circuit is connected to the clamp circuit unit inserted between the power terminal and the ground terminal, and is configured to protect the clamp circuit unit from a breakdown when the external power supply is reverse-connected.

Protection circuit and operational method of the protection circuit, and semiconductor integrated circuit apparatus

An antenna driving device includes an antenna driving circuit arranged to generate driving current of a transmission antenna, a power supply circuit arranged to generate an output voltage from an input voltage so as to supply the output voltage to the antenna driving circuit, and a logic circuit arranged to control the antenna driving circuit and the power supply circuit. The power supply circuit has a function of temporarily disabling current feedback control so as to perform voltage feedback control using a reference value just before halting the drive of the transmission antenna when the power supply circuit restarts to drive the transmission antenna, or has a function of performing variable control of a reference value for current feedback control in accordance with a rising edge of the driving current when the power supply circuit restarts to drive the transmission antenna.

Antenna driving device

A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.

Semiconductor integrated circuit device

A solar battery module () includes a stack of: a plurality of solar battery strings () and bus sections () connected to both ends of each of the plurality of solar battery strings (); flexible resin layers (through); and a flexible resin film (). The flexible resin layers (through) and the flexible resin film () have, on a light receiving surface side of solar battery cells (), holes through which the bus sections () are each partially exposed. The exposed parts of the bus sections () serve as a respective plurality of electrically-connecting means (). A solar battery array () includes a plurality of solar battery modules (). The plurality of solar battery modules () are electrically connected with each other via the plurality of electrically-connecting means (). This makes it possible to achieve a large-scale solar battery array () with high mechanical strength.

Solar battery module and solar battery array

Growing community of inventors

Ibaraki, Japan

Naoki Takahashi