Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Toshiba Tungaloy Co., Ltd.

Naoki Shutoh

Shinya Sakurada

Fumio Ueno

Motomasa Imai

Naruhito Kondo

Nobuhisa Takezawa

Hiroshi Endo

Masaki Kobayashi

Iwao Mitsuishi

Hiromitsu Takeda

Akihiro Horiguchi

Mitsuo Kasori

Katsuyoshi Oh-Ishi

Osamu Tsuneoka

Yoshiko Goto

Hideyasu Andoh

Shoji Kozuka

Hideo Ohkuma

Shinsuke Hirono

Yuji Katsumura

Toshiyuki Takahashi

Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure:(TiZrHf)NiSn&#x2003;&#x2003;composition formula (1);(Ln(TiZrHf))NiSn&#x2003;&#x2003;composition formula (2);

Thermoelectric material and thermoelectric element

A thermoelectric material has a composition expressed by (FeV)(AlSi)(0.35&#x2266;p&#x2266;0.7, 0.01&#x2266;q&#x2266;0.7, 20&#x2266;x&#x2266;30 atomic %). The thermoelectric material includes a crystal phase having an L2structure or a crystal phase having a B2 structure as a main phase.

Thermoelectric material and thermoelectric conversion module using the same

A thermoelectric material has a composition expressed by (TiHfZr)Co(SbSn)(0.1&#x3c;p&#x2266;0.3, 0.1&#x3c;q&#x2266;0.3, 0.1&#x3c;r&#x2266;0.8, 30&#x2266;x&#x2266;35 atomic %, and 30&#x2266;y&#x2266;35 atomic %), and includes a phase having an MgAgAs crystal structure as a main phase.

Thermoelectric material, thermoelectric conversion module and thermoelectric power generating device using the same

A thermoelectric material includes a composition represented by the following formula (A):(TiZrHf)NiSn&#x2003;&#x2003;(A)where 0&#x3c;a1&#x3c;1, 0&#x3c;b1&#x3c;1, 0&#x3c;c1&#x3c;1, a1+b1+c1=1, 30&#x2266;x&#x2266;35, and 30&#x2266;y&#x2266;35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be Iand I, respectively, a value of I/(I+I) is in a range of 0.2 to 0.8.

Thermoelectric material and thermoelectric device

Disclosed is a thermoelectric material comprising a main phase which is represented by the following composition formula and having an MgAgAs-type crystalline structure:(TZrHf)CoSb

Thermoelectric material and thermoelectric module using the thermoelectric material

Disclosed is a thermoelectric module, comprising a plurality of p-type thermoelectric elements each comprising a p-type semiconductor having a skutterdite crystal structure, a plurality of n-type thermoelectric elements each comprising a n-type semiconductor having a skutterdite crystal structure, at least one first electrode, at least one second electrode, at least one first alloy layer and at least one second alloy layer, wherein said at least one first alloy layer and said at least one second alloy layer contain Sb and at least one transition metal element selected from the group consisting of Ag, Au and Cu.

Thermoelectric module and heat exchanger

Disclosed is a power resistor which has a large heat capacity per unit volume and an appropriate and stable electrical resistance, and in which the resistance changes little with time due to surge absorption. This power resistor includes a sintered body containing aluminum oxide and carbon, and a pair of electrodes formed on the two opposing surfaces of the sintered body. This sintered body consists of first regions containing a small amount of carbon or not containing carbon and second regions containing a larger amount of carbon than in the first regions and so arranged as to be connected to the electrodes.

Power resistor, method of manufacturing the same, and power circuit

A metal oxide resistor for suppressing variations in resistivity in use in an atmosphere at a high temperature or humidity. Such a metal oxide resistor includes a sintered body in which carbon particles having an average grain size of 1 .mu.m or less exist in the grain boundaries of metal oxide particles in an amount of 0.05 to 3 wt %, and electrodes formed on at least two opposing surfaces of the sintered body.

Metal oxide resistor, power resistor, and power circuit breaker

A compact power circuit breaker having a large breaking capacity and stable breaking performance by using a compact closing resistor unit having high performance. The power circuit breaker includes a main switch arranged in a current path, an auxiliary switch connected to the current path parallel with respect to the main switch and turned on prior to an ON state of the main switch, and a closing resistor unit connected in series with the auxiliary switch and incorporated with a resistor having a sintered body consisting of a Zn--Ti--Co--O--based oxide and having metal components consisting of titanium calculated as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol %, cobalt calculated as cobalt oxide (CoO) in an amount of 0.5 to 30 mol %, and Zn as substantially the balance.

Power circuit breaker and power resistor

According to this invention, there is disclosed a compact power circuit breaker having a large breaking capacity and stable breaking performance due to a compact closing resistor unit having high performance. The power circuit breaker includes a main switching mechanism having an arc extinguishing function, an auxiliary switching mechanism parallelly connected to the main switching mechanism and having an arc extinguishing function, and a closing resistor unit connected in series with the auxiliary switching mechanism and incorporated with a resistor containing zinc oxide (ZnO) as a main component and titanium figured out as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol% and nickel figured out as nickel oxide (NiO) in an amount of 0.5 to 30 mol. % as sub-components.

A light-shielding aluminum nitride sintered body essentially consists of aluminum nitride crystal grains and 0.01 to 1.5 wt % (an element content in the case of a transition metal compound) of homogeneously dispersed transition metal particles and/or transition metal compound particles having an average particle size of 5 .mu.m or less and has a thermal conductivity of 200 W/m.K or more.

Growing community of inventors

Yokohama, Japan

Naoki Shutoh