National Institute of Advanced Industrial Science and Technology

Other

National Institute of Agrobiological Sciences

Agency of Industrial Science & Technology, Ministry of International Trade & Industry

Naoki Shirakawa

Tetsuya Mino

Kazuhiro Murata

Shinichi Ikeda

Hiroshi Bando

Shin-Ichi Ikeda

Manabu Yoshida

Kazuhiko Endo

Hiroshi Takashima

Akira Shoji

Mitsuru Itoh

Nobuko Fukuda

Ruiping Wang

Eiichi Suzuki

Yoshiyuki Yoshida

Katsuhide Uchida

Provided is a sheet-shape electrostatic sound pressure-electrical signal conversion device that is three-dimensionally deformable and has a low drive voltage. The sound pressure-electrical signal conversion device includes a polymer sheet sandwiched between a pair of electrodes facing each other, the polymer sheet is a dielectric film, at least one of the electrodes includes an insulating flexible substrate having a plurality of through-holes and a plurality of conductive fibers having one end fixed to the flexible substrate with a pressure sensitive adhesive, electrical conduction in an in-plane direction is formed by contact between the conductive fibers, the conductive fibers are vibrated by giving an electrical signal to the pair of electrodes or the conductive fibers are vibrated by receiving sound pressure to cause the pair of electrodes to output an electrical signal.

Sound pressure-electrical signal conversion device and conversion method for same

A method comprising: supplying a gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10atm by a water/oxygen molecule discharging apparatus into the interior of a reaction chamber and carrying out a dehydration/deoxidation process in the interior of said reaction chamber so as to control water vapor partial pressure to become lower than 10atm; depositing a metal film on a substrate by supplying a carrier gas or a plasma excitation gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10atm into the interior of said reaction chamber; forming an insulating film on the wafer by oxidizing the metal film in a low-oxygen atmosphere whose oxygen partial pressure has been controlled to become lower than 10atm.

Thin film depositing method

In a helium 3 refrigerator-utilizing magnetic property measurement system (MPMS) which enables magnetization measurement to be effected until 0.3 K, a main pipe, to enable magnetization measurement to be infallibly effected even when the upper limit of a magnetic field the MPMS can induce is applied, includes an upper supporting tube positioned in the uppermost part and allowing a bellows to be connected to the lateral part thereof, a condensing tube supported in the lower part of the upper supporting tube, an outer tube fixed in the lower part of the condensing tube and adapted to form an outer wall of an insulated vacuum chamber, and a lower inner tube forming an inner wall of the insulated vacuum chamber. In each of the tubes, the lower inner tube is formed of titanium. As a result, a background signal can be decreased and the measurement can be infallibly effected until the upper limit of the magnetic field of the MPMS.

Helium-3 refrigerating machine-using magnetization measuring system

The present invention provides oxygen partial pressure control apparatuses that can control the partial pressure of oxygen in atmospheric gases in processing apparatuses or the like to within the range of 0.2 to 10atm, while maintaining low material and operational cost conditions. The present invention provides oxygen partial pressure control apparatuses in which air or pure oxygen is supplied to the inside of a heating furnace that can heat and maintain solid electrolytes at an operational temperature, wherein the heating furnace houses at least one oxygen pump comprising a solid electrolyte with a tubular structure and at least two oxygen sensors comprising a solid electrolyte with a tubular structure, wherein the at least one oxygen pump described above and the at least two oxygen sensors described above are placed in parallel such that the aforementioned air or pure oxygen serves as a purge gas that sweeps the surroundings of each solid electrolyte tube, and wherein they are connected such that a common process gas can flow through each solid electrolyte tube.

Oxygen partial pressure control apparatuses and methods of using solid electrolytes for oxygen partial pressure control

A capacitance temperature sensor in which temperature is measured by detecting capacitance of a parallel plate condenser which comprises a dielectric material comprising strontium titanate single crystal in which (a) 30% by weight or less of oxygen-or (b) 30% by weight to 50% by weight of oxygen-is substituted with oxygen-isotope.

Capacitance temperature sensor and temperature measuring device

An apparatus for measuring electromagnetic characteristics includes a sample rod with a sample fixed to a lower part thereof, a helium refrigerator, in which the sample rod is inserted, having a main pipe that forms around the sample rod a space that is cooled by helium , a device for supplying helium to the helium refrigerator, an inner tube portion, into which the main pipe is inserted, that supports at an upper part thereof the refrigerator, an outer tube that cools an outer periphery of the inner tube with helium, a liquid helium container that supplies liquid helium to the outer tube, and a device for measuring the electromagnetic characteristics of the sample.

Apparatus for measuring electromagnetic characteristics

This invention relates to a process for the production of an oxide of a metal A by heating precursors of the oxide of a metal A, in the presence of an oxygen partial pressure control agent comprising an oxide of a metal B that is capable of assuming multiple valence numbers. The process is carried out under a condition that an ionization tendency relationship of A <B <A is satisfied, where i is a valence number of the metal A in the oxide to be produced and j is a valence number of the metal B in the oxygen partial pressure control agent.

Method of synthesizing metal oxides

A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, and a gate electrode is provided on the gate insulation layer.

Field-effect transistor

A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound and/or Ru metal. The mixture is sintered at a primary temperature of 900&deg; C. to 1300&deg; C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape that is again sintered, this time at a secondary temperature of 1000&deg; C. to 1500&deg; C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Growing community of inventors

Tsukuba, Japan

Naoki Shirakawa