Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Clarion Co

Other

Ricoh Company, Ltd.

Skhynix Inc.

Konica Minolta, Inc.

Mitsubishi Electric Corporation

Fujitsu Component Limited

Faurecia Clarion Electronics Co., Ltd.

Nissan Motor Company Limited

Wako Pure Chemical Industries, Inc.

Naoki Shimizu

Ji Hyae Bae

Takehito Ogata

Yong Ho Kim

Kenji Tsuchida

Kimiyoshi Machii

Kazunari Tada

Yutaka Shirai

Ayano Miyashita

Yoji Watanabe

Fumio Takei

Ayumu Akabane

Arata Hayashi

Junya Nakamura

Ayano Enomoto

Mitsuo Shimotani

Akira Yamaguchi

Hiroshi Hirayama

Tadashi Sato

Shigeru Nakamura

Kenji Kato

Hiroyuki Sakuyama

Takuya Mori

Susumu Fujioka

Yoshitaka Uchida

Takashi Goto

Yoshihiro Konno

Junki Aoki

Takehiko Goshima

Takashi Washizu

Tomohito Kajiwara

Toshinori Takimura

Genki Umeizumi

Toshio Kawagishi

Yoshiyuki Masuda

Yoshihiro Otsuka

Takayasu Oe

Tomoyuki Nakao

Tsuyoshi Kanda

Hiroaki Andou

Masaya Akihara

Kuniaki Ozono

Kouhei Tanaka

Kengo Asaki

Takafumi Hagi

Shingo Donkai

A three-dimensional object detecting device generates a mask image that masks regions outside a three-dimensional object candidate region in a difference image of a first overhead image and a second overhead view image for which the imaging locations O are mutually aligned, identifies a near ground contact line of a three-dimensional object based on a masked difference image. The difference image is masked with the mask image, finds an end point of the three-dimensional object based on the masked difference image, identifies the width of the three-dimensional object based on a distance between a non-masking region boundary and the end point of the three-dimensional object in the mask image, identifies a far ground contact line of the three-dimensional object based on the width of the three-dimensional object and the near ground contact line, and identifies the location of the three-dimensional object in the difference image based on the near ground contact line and the far ground contact line.

Three-dimensional-object detection device, on-vehicle system, and three-dimensional-object detection method

There is provided a method for producing a piezoelectric element, which allows for forming a columnar microstructure with a small width and a high aspect ratio. The method is intended to produce a piezoelectric elementincluding a three-dimensional structure grouphaving a plurality of the three-dimensional structuresandformed in a plate-like or columnar shape with a width of 30 &#x3bc;m or less and a height of 80 &#x3bc;m or more. The production method includes a first process of fabricating a plurality of plate-like or columnar precursor shapeson a bulk materialformed of a Pb-based piezoelectric material, and a second process of reducing the width of the precursor shapesto a predetermined value using an etching liquid.

Method for producing piezoelectric element, and piezoelectric element

A piezoelectric member including metal electrodes with improved adhesiveness to piezoelectric elements is to be provided. A piezoelectric memberincludes a piezoelectric element, and a pair of electrodesrespectively formed on a pair of opposing surfacesof the piezoelectric element. The electrodesincludes: a base filmthat is formed on the opposing surfacesof the piezoelectric elementand contains a thiol group; a metal adhesive filmformed on the base film; and an electrode filmthat is formed on the metal adhesive filmand is for applying voltage to the piezoelectric element. The metal adhesive filmis formed with a different material from the electrode film, and has a thickness of 1 to 10 nm.

Piezoelectric member, ultrasonic oscillation element, ultrasonic probe, ultrasound diagnostic system, and method for producing piezoelectric member

An apparatus for recognizing a division line on a road from an image captured by a camera includes: a processing area setting unit to set a processing area to the image; a statistics calculation unit to calculate statistics of the image in the processing area; a threshold value setting unit to set a plurality of threshold values on the basis of the statistics; a division line feature point extraction unit to classify a plurality of pixels contained in the image on the basis of the white line threshold value and the road surface threshold value and extracts feature points of the division line on the basis of classification results of the plurality of pixels; and a division line decision unit configured to decide the division line on the basis of the feature points extracted by the division line feature point extraction unit.

Division line recognition apparatus

A section line recognition device is realized which can determine a line type of a section line in a road surface with high accuracy. In step, a feature amount is extracted from an image captured by each camera. This step corresponds to a process of a feature point extraction unit. In the next step, the extracted feature amount is transformed into bird's-eye view coordinates which is common coordinates. This step corresponds to a process of a coordinates transformation unit. Next, in step, a camera to be selected is determined. This step is a process of a camera determination unit. Next, in step, the state transition at the appearance position of the feature point on the bird's-eye view coordinates is determined using feature point coordinates of the camera selected in step. This step is a process of a state transition determination unit. Finally, in step, the line type is determined. This step is a process of a line type determination unit.

Section line recognition device

A solid object detection device includes an overhead view transformation processing unit transforming first and second photographed images photographed by a camera at different timings in travel of a vehicle into first and second overhead view images, respectively, a subtracted image generation unit generating a subtracted image between the first and second overhead view images whose photographing positions are aligned with each other, a solid object position specification unit specifying a position of a solid object present around the vehicle based on the subtracted image, and a masked subtracted image generation unit generating a masked subtracted image in which a region other than a solid object candidate region as a candidate where the solid object appears in the subtracted image is masked and the solid object position specification unit specifies a position of the solid object in the subtracted image based on the masked subtracted image.

Solid object detection device and solid object detection method

The present invention addresses the problem of enabling an accurate determination of line type using a plurality of cameras. A demarcation line recognition device of the present invention includes a plurality of cameras (); a line type determination unit () that senses demarcation line candidates from respective images obtained by the plurality of cameras and determines line types of the sensed demarcation line candidates; a demarcation line position calculation unit that calculates the positions of the sensed demarcation line candidates; a reliability level calculation unit that computes a reliability level of each demarcation line candidate by using positional relationships between the sensed demarcation line candidates; a probability computation unit () to which line types of demarcation line candidates for which the reliability level is equal to or greater than a threshold value are input and that determines the probability of each line type; and a line type decision unit () that finally decides the line types of the demarcation lines on the basis of the results of the probability computation unit.

Demarcation line recognition device

The present invention provides a piezoelectric element manufacturing method. The manufacturing method is a method of manufacturing a piezoelectric element comprising a piezoelectric body composite in which a piezoelectric body configured from a Pb-based piezoelectric material and a resin are alternately arranged, and comprises a step of etching, using an etching liquid, a plurality of parallel piezoelectric body segments formed by dicing. The etching liquid comprises a liquid which contains 0.1 to 20 mass % of hexafluorosilicic acid.

Piezoelectric element manufacturing method

A tactile presentation device includes: a substrate that has a lower surface on which a vibration generation element is mounted, and an upper surface opposite to the lower surface; a first adhesive layer that is disposed on the upper surface of the substrate; a first elastic layer that is disposed on the first adhesive layer, and has a lower elastic modulus than an elastic modulus of the substrate; wherein the elastic modulus of the first elastic layer corresponding to a frequency of an ultrasonic band of the vibration generation element is equal to or more than 1 GPa.

Tactile presentation device

A tactile presentation device includes: a substrate including a vibration plate and a terminal plate which are integrally formed; an actuator that is provided on the vibration plate, and generates a standing wave of ultrasonic vibration; a terminal that is provided on an end of the terminal plate, and electrically connects the actuator to an external; a fixing member that fixes the vibration plate to a support; and a vibration suppressor that is provided between the terminal and the fixing member, and suppresses the ultrasonic vibration transmitted from the vibration plate to the support.

A semiconductor memory device includes nonvolatile memory cells. A first circuit is configured to receive data to be written to the plurality of memory cells, read data from the plurality of memory cells, compare the data to be written to the data that was read, identify each memory cell presently storing a data value that differs from a data value to be written, and identify weak bit data in the existing data. A second circuit is configured to simultaneously program the weak bits and memory cells identified as presently storing the data value that differs from the data value to be written to the memory cell.

Semiconductor memory device

According to one embodiment, a memory device includes one or more semiconductor devices connected in common to a bus. Each of the one or more semiconductor devices includes a memory unit to store data, and an input/output control unit. The input/output control unit is configured to acquire address information from a data processing device via the bus and access the memory unit according to the acquired address information. The data processing device is configured to divide the address information into a plurality of cycles to transmit to the bus. The input/output control unit is configured to switch a number of cycles in which the address information is to be acquired, according to setting information acquired from the data processing device.

Memory device and data processing device

According to one embodiment, a memory system includes a resistance change type memory including a memory cell configured to hold first data and an ECC circuit configured to detect and to correct an error in the first data; and a controller configured to control an operation of the resistance change type memory. In a read operation for the memory, when the first data from the memory cell includes an error, the memory transmits second data in which the error is corrected and a first signal to the controller. The controller transmits a control signal and a write command to the memory based on the first signal. The memory writes the second data to the memory cell based on the control signal and the write command.

Memory system and resistance change type memory

According to one embodiment, a semiconductor memory device includes a nonvolatile memory comprising a plurality of memory cells, and a controller configured to perform, a preliminary write process of writing reverse data into a first memory cell, and a main write process of writing correct data in the first memory cell, when the first memory cell is in a weak bit state, wherein a condition of the preliminary write process is different from a condition of the main write process.

According to one embodiment, a semiconductor memory device includes a first memory cell having a first variable resistance element, a second memory cell having a second variable resistance element, and a first circuit which controls writing to the first memory cell and the second memory cell. The first circuit receives a first command instructing writing to the first memory cell, after receiving the first command, receives a second command instructing writing to the second memory cell, and after receiving the second command, performs writing to the second memory cell when performing writing to the first memory cell.

Semiconductor memory device and method of read/write operation for variable resistance elements

Growing community of inventors

Kawasaki Kanagawa, Japan

Naoki Shimizu