Hitachi, Ltd.

Hitachi Haramachi Semi-conductor, Ltd.

Zebra Co., Ltd.

Hitachi Power Semiconductor Device, Ltd.

Naoki Sakurai

Mutsuhiro Mori

Hidetoshi Arakawa

Yoshitaka Sugawara

Kenichi Onda

Yasumiti Yasuda

Hiroshi Owada

Hideki Miyazaki

Masahiro Iwamura

Akihiko Kanouda

Yuji Enomoto

Hisashi Tanie

Masahiro Nagasu

Hirooki Tokoi

Tomoyuki Tanaka

Masashi Yura

Yoshimasa Takahashi

Koumei Hanaoka

Koji Yamaguchi

Koichi Ito

Yoshitaka Iwaji

Yutaka Suzuki

Takashi Ogawa

Yasuo Matsuda

Kiyomi Yoshinari

Norikazu Tokunaga

Junichi Sakano

Toru Masuda

Kinya Kobayashi

Takayoshi Nakamura

Shin Kimura

Junpei Kusukawa

Yasumichi Yasuda

Kazutami Tago

Seigoh Yukutake

Yasuhiko Kohno

Kenta Deguchi

Toshiki Kurosu

Daichi Kawamura

Kohei Matsushita

Tosifumi Oohata

Fusao Houjyou

Satoru Yui

When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as 'a', and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as 'b', the positional relationship a&#x3c;b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.

Power semiconductor module

A highly reliable electromechanical integral motor is provided. In the electromechanical integral motor including an axial gap type motor and a power conversion control device, the power conversion control device is mounted on an end bracket portion of the motor. Additionally, a space is provided between the end bracket portion of the motor and the power conversion control device. Further, the end bracket portion of the motor and the power conversion control device are fixed by a plurality of fixing members, and at least one set of the plurality of fixing members is disposed to be spaced apart from each other.

Electromechanical integral motor

To significantly improve a heat dissipation property of an axial gap rotary electric machine within a size necessary for configuring a motor. In an axial gap rotary electric machine comprising a stator and a rotor in an axial direction, the stator has a plurality of stator cores arranged in a circumferential direction and coils wound around the stator cores, and a heat pipe obtained by filling an inside of a metal hollow pipe with a refrigerant is arranged in a gap between adjacent coils formed in an outer diameter portion of the stator in a radial direction and a housing with a necessary insulation distance between the coils and the heat pipe. The heat pipe extends in a direction of a rotation axis and an opposite output side, and is in contact with a heat dissipating fin outside an end bracket on the opposite output side.

Axial gap rotary electric machine

In a calculation method of calculating a switching wave form of an inverter by expressing a wave form obtained by measurement or simulation using a function formula, an intermediate terminal is provided between an upper terminal and a lower terminal of an inverter arm and a power supply of a voltage function formula is provided between the upper terminal and the intermediate terminal or the intermediate terminal and the lower terminal. Further, it may be configured such that a variation impact from peripheral circuits at time of switching is calculated and voltage correction calculation is performed to prevent the calculated switching wave form from changing due to the calculation of the variation impact.

Calculation method of switching waveform of the inverter and circuit simulation model

In a level shift circuit, when a power-source voltage variation dV/dt of a high voltage side occurs and influences on a logic level of a circuit, the passing through of a malfunction signal is masked and prevented in the first and second logic circuits, by a signal from a time-constant generation circuit or a portion where a power voltage variation occurs in advance, by utilizing the fact that this variation occurs both at a set side and a reset side. When the power source voltage variation dV/dt is generated at a high voltage side, sufficient allowance in the timing of this masking prevents an erroneous signal from being transmitted to a flip-flop, and a control signal is transmitted from a low voltage side circuit not giving malfunction to a high voltage side circuit, even when there is a production variation in each element in semiconductor processes.

Level shift circuit and power conversion unit

An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit, a level shift circuitincluding a current sensing circuit, a drive section of a lower arm drive circuit, and a drive signal processing circuitare integrated and built in one high withstand voltage IC chip. Circuit elements constituting a final output stage buffer sectionof the upper arm drive circuitare built in a vertical p-channel MOS-FET chipand a vertical n-channel MOS-FET chip. Circuit elements constituting a final output stage buffer sectionof the lower arm drive circuitare built in a vertical p-channel MOS-FET chipand a vertical n-channel MOS-FET chip. Thus, a driver ICis fabricated.

Integrated circuit for driving semiconductor device and power converter

A high-reliability IGBT drive device in which the high- and low-voltage side IGBTs are complementarily ON/OFF controlled before and after dead time. A reset pulse that turns OFF the high-voltage side IGBT is generated during the dead time as described in the following example. The reset pulse is generated immediately before an ON instruction for the low-voltage side IGBT, so that a period that begins immediately before the ON instruction for the low-voltage side IGBT and overlaps with the ON instruction, continuously during the dead time, continuously during dead time immediately before the low-voltage side IGBT turns ON, or in such a manner as to invalidate the ON instruction for the low-voltage side IGBT when an ON state of the high-voltage side IGBT is observed.

Semiconductor element drive device with level shift circuit and apparatus including the same

An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.

Electric power conversion device

To provide a motor drive adapted to operate stably and suffer essentially no damage, even when a high voltage is applied between grounding terminals of upper and lower arms. The motor drive of this invention includes: an arm with a first electric power semiconductor-switching element and a second electric power semiconductor-switching element, both connected in series between major terminals; and a level-shifting circuit that transmits a control signal of the first semiconductor-switching element connected to the high-voltage side of the arm, from a low-voltage circuit to a high-voltage circuit; the motor drive employing an insulated-gate bipolar transistor as the signal-transmitting high-withstand-voltage element formed in the level-shifting circuit.

Motor drive

There is provided a water based ink capable of decolorizing or discoloring written or printed letters or images through an organic solvent or heating, which is used for a writing instrument such as roller balls, makers, etc., printing inks, ink jets and the like. The water based ink comprises a colorant consisting of spherical fine grains colored by a color former, the spherical fine grains consisting of at least one member selected from polyolefins and other polymers containing, as a constitutional unit, at least one monomer selected from the group consisting of acrylonitrile, styrene, acrylic acid, methacrylic acid, methyl acrylate and methyl methacrylate.

Water based ink capable of decolorizing or discoloring and a process for the production of the same

A trench gate type semiconductor device with a current sensing cell is composed so that the orientation of crystal face at side walls of trenches forming channels of trench gates in a main cell is equal or almost equal, or equivalent or almost equivalent to the orientation of crystal face at side walls of trenches forming channels of trench gates in a current sensing cell, which brings the same performance to the main and sense cells, whereby the high accuracy current sensing can be realized.

Trench gate type semiconductor device with current sensing cell

An inverter apparatus constituted by one or more series connections of plural semiconductor devices each having a pair consisting of an insulated gate bipolar transistor, and a diode, both of which are in a reverse parallel connection with each other, wherein the resistivity of the base layer of the lowest impurity concentration in the diode is lower than that of the base layer of the lowest impurity concentration in the insulated gate bipolar transistor, and wherein a breakdown voltage of said insulated gate bipolar transistor at the time of switching from a conduction state to a blocking state is lower than a breakdown voltage of said insulated gate bipolar transistor and said diode at the time of the blocking state.

Power inverter having series connection of semiconductor devices each

A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor supporter by applying the same reverse biasing voltage to the supporter and the islands. That is, in the structure, an electrode is provided at the back surface of the supporter and connected to a main electrode of the selected island. The above-mentioned main junction is the pn junction to which the reverse biasing voltage for securing the withstand voltage of the semiconductor device is applied. The device is structured, also, with high impurity concentration regions for preventing a depletion layer, formed during a reverse biasing of the main junction of a circuit element of an island, from extending into adjacently disposed islands.

Dielectric isolated high voltage semiconductor device

An inverter with an improved semiconductor device is provided having a pn junction composed of a first semiconductor layer made of a first conductivity type semiconductor and a second semiconductor layer made of a second conductivity type semiconductor having a wider band-gap than that of the first semiconductor layer.

Inverter apparatus having improved switching element

Growing community of inventors

Hitachi, Japan

Naoki Sakurai