Shoei Chemical Inc.

Naoki Sakura

Hirokazu Sasaki

Takafumi Moriyama

Makoto Kido

Yuko Mitsuka

Keisuke Matsuura

Provided is a method for producing particles, the method including a particle generating step of forming a product particle flow including target product particles by heating a segmented reaction raw material liquid flow divided into segments by a gas for segmentation under applying pressure at a pressure P(MPa) and at a heating temperature T (° C.) to react the raw material for particle formation to generate the target product particles, in which, at the particle generating step, (V/V) is 0.200 to 7.00 and the pressure Pat the particle generating step is 2.0 times or more a vapor pressure P(MPa) of a solvent at the heating temperature T. According to the present invention, a method for producing particles having a narrow particle size distribution with high production efficiency can be provided.

Method for producing particles and particle production apparatus

The purpose of the present invention to provide semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. Semiconductor nanoparticles having a core containing at least In and P, and a shell having one or more layers, wherein at least one layer of the shell is ZnSeTe (wherein Te/(Se+Te)=0.03 to 0.50); and the semiconductor nanoparticles cause, when the semiconductor nanoparticles are dispersed in a dispersion medium to yield a dispersion liquid with a concentration of 1 mg/mL in inorganic mass, the dispersion liquid to have an absorbance of 0.9 or higher with respect to light having a wavelength of 450 nm at an optical path length of 1 cm.

Semiconductor nanoparticles comprising ZnSTe shell layer

The purpose of the present invention to provide a wavelength conversion layer containing semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. A wavelength conversion layer containing semiconductor nanoparticles, wherein the wavelength conversion layer can convert light having a wavelength of 450 nm to light having a peak wavelength of 500 nm to 550 nm, or light having a peak wavelength of 600 nm to 660 nm; each of the semiconductor nanoparticles contained in the wavelength conversion layer has a core and a shell having one or more layers; the core contains In and P; and at least one layer of the shell is ZnXTe (wherein X represents Se or S, or both Se and S).

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Tosu, Japan

Naoki Sakura