Sumitomo Electric Industries, Limited

Naoki Ooi

Hiromu Shiomi

Shinsuke Fujiwara

Taro Nishiguchi

Tsutomu Hori

Shunsaku Ueta

A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.

Method of manufacturing silicon carbide substrate

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90&#xb0;&#xb1;10&#xb0; across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.

Method of manufacturing silicon carbide semiconductor device

A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of etching employing a gas containing oxygen gas and at least one fluorine compound gas selected from a group consisting of CF, CF, CF, and SF.

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Osaka, Japan

Naoki Ooi