Nec Corporation

Nec Electronics Corporation

National Institute of Information and Communications Technology, Incorporated

The University of Tokyo

Nippon Avionics Co., Ltd.

Toray Industries, Inc.

Osaka University

Director General, Technical Research Institute, Japan Defense Agency

Masahiro Ota, Director General, Technical Research and Development

Director General, Technical Research and Development Institute, Japan

Naoki Oda

Tokuhito Sasaki

Yasutaka Nakashiba

Hiroaki Ohkubo

Hiroshi Murase

Nobukazu Ito

Naoyoshi Kawahara

Iwao Hosako

Hideo Wada

Shuichi Ohkubo

Susumu Komiyama

Kuniko Kikuta

Masahiko Sano

Norihiko Sekine

Junshiro Motoyama

Mitsuhiro Nagashima

Toru Mori

Yuichi Ogawa

Seiji Kurashina

Hiroaki Date

Katsuya Kawano

Akinori Irizawa

Keigo Kawase

Takayuki Sudo

Tomoko Ito

Takayuki Sudou

Satosi Baba

Goro Isoyama

Keiji Miyamoto

Kouji Nishiya

Ryukou Kato

A sample is irradiated with terahertz light from a light source, so that an image (G1) is generated by capturing an image of a region (R1) including a point (S) of the sample, and an image (G2) is generated by capturing an image of a region (R2) including the point (S) and separated from the region (R1) by a distance (L). A single image (V) is generated by applying a predetermined binary operation to the images (G1) and (G2).

Terahertz imaging device, and method of eliminating interference patterns from terahertz image

A false-twisted low-fused polyester yarn has a non-untwisted part having a twist in a false-twist direction, an over-untwisted part having a twist in a direction opposite to the false-twist direction, and a non-twisted crimped part having no twist, alternately disposed along the longitudinal direction of the yarn, the average length of the non-untwisted part being no more than 7 mm, the average length of the over-untwisted part being at least 7 mm, and the degree of fusion-bonding in the yarn longitudinal direction being no more than 50%.

False-twisted low-fused polyester yarn and multilayer-structure woven or knitted fabric

The present invention is applied for an image capturing device having a light source and a camera that captures an image of a measurement subject placed in an optical path that lies between said camera itself and said light source. The image capturing device according to the present invention includes a control unit that subtracts a plurality of frame images captured by said camera during an OFF period of said light source from a plurality of frame images captured by said camera during an ON period of said light source, the number of frame images captured by said camera during the OFF period being the same as that number of frame images obtained by said camera during the ON period and integrates the differences between their images.

Image capturing device and image capturing method

In order to generate a two-dimensional image of a sample in a short time using THz waves, provided is a reflective imaging device including a sample holder, a THz wave light source, a THz wave camera, a rotation mechanism for rotating the holder and the camera, and a processing unit. A sample unit includes an incidence member, a sample, and a reflection member. The sample includes a first region of only a membrane and a second region including a biopolymer. The camera detects, with regard to respective incident angles, a THz wave in which interference occurs between a component reflected at an interface between the incidence member and the sample and a component reflected at an interface between the sample and the reflection member, of each portion of the sample unit, and outputs a signal. The processing unit specifies an incident angle at which a signal of a first THz wave that interferes in the first region is relatively small and a signal of a second THz that interferes in the second region is relatively large, and generates a two-dimensional image of the sample based on the signal from the camera with regard to the specified incident angle.

Reflective imaging device and image acquisition method

Provided is an imaging system, including: a light source; an imaging device; a first optical system for irradiating an imaging object with light from the light source; a second optical system for causing one of light reflected from the imaging object and light transmitted through the imaging object to enter the imaging device; a control device for controlling the light source to irradiate the light with a predetermined period; and a processing device for acquiring time-series image data over a plurality of frames by controlling the light source to irradiate the light with the predetermined period, and allocating a maximum pixel intensity among the time-series pixel data of each pixel as pixel data of the each pixel to thereby obtain first image data when the light source irradiates the light.

Imaging system and imaging method

A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap.

Bolometer type Terahertz wave detector

A THz wave detector including a thermal isolation structure in which a supporting unit containing electrode wirings connected to a readout circuit formed in an substrate supports a temperature detecting unit connected to the electrode wirings so that one face of said temperature detecting unit and said substrate are opposed to each other with a predetermined gap, wherein a reflective film reflecting THz waves is formed on the substrate so as to face the temperature detecting unit, an absorbing film absorbing the THz waves is formed on the temperature detecting unit, the reflective film and the temperature detecting unit form an optical resonant structure, the distance between the reflective film and the temperature detecting unit is set to 8 to 14 &#x3bc;m, and the sheet resistance of the absorbing film is set to 100 to 200 &#x3a9;/square.

THz wave detector

A detector detects the color of a medium after a gas to be identified and a reagent have chemically reacted with each other on the medium. A controller identifies color information, which is most similar to the color detected by the detector, from color information stored in a spectral database, and reads gas identifying information related to the identified color information, as gas identifying information representing the gas to be identified, from the spectral database.

Gas identifying apparatus, gas identifying method gas handling assisting system and gas handling assisting method for identifying gas based on color of reaction surface produced by chemical reaction

A dual-wavelength thermal infrared sensor includes a first and a second type pixels that detect infrared in different wavelength ranges. The pixels of both types include a diaphragm supported by beams, an eave formed to spread outward from the diaphragm, and reflection film on the substrate. The diaphragm includes a thermoelectric conversion material thin film, an electrode, and protective films. The protective films and eaves are made of a material having larger absorption coefficient for infrared in the first wavelength range and a smaller absorption coefficient for infrared in second wavelength range. First-type pixels further have metal thin films formed on the top of the diaphragm and eaves. First-type pixels have sensitivity to infrared in a first wavelength range and in a second wavelength range defined by optical interference occurring between the metal thin films and the reflection film. Second-type pixels have sensitivity to first wavelength range infrared.

Dual-wavelength thermal infrared sensor

A gas measuring apparatus includes: an infrared detecting section that receives an infrared ray from a measurement area and outputs infrared spectrum data relating to the infrared ray; a variation detecting section that detects, by using the infrared spectrum data, a variation in intensity of the infrared ray, which is caused in the infrared ray that radiates from the measurement area and which is caused by a measuring object gas in the measurement area; a converting section that converts the infrared spectrum data to radiance temperature spectrum data which represent wavelengths in an infrared region and radiance temperatures at each wavelength; a background temperature detecting section that detects, as background temperature of the measuring object gas, a maximum radiance temperature from among radiance temperatures represented by the radiance temperature spectrum data; a gas temperature detecting section that detects the temperature of the measuring object gas by using a radiance temperature in a wavelength band included in the water vapor absorption band in the infrared region from among the radiance temperatures represented by the radiance temperature spectrum data; and a computing section that computes surface density of the measuring object gas on the basis of the variation in intensity of the infrared ray, the background temperature of the measuring object gas, and the temperature of the measuring object gas.

Gas measuring apparatus and gas measuring method

In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

Integrated circuit device and fabrication method therefor

A color identifying device includes a mount block, a color detector, a lens and a color identifier. A reactive board having a plurality of surfaces to be measured in respective predetermined positions is mounted in the mount block. The color detector has a plurality of color measuring areas corresponding respectively to the reaction surfaces of the reactive board mounted in the mount block. The lens forms images of the surfaces of the reactive board mounted in the mount block on the respective color measuring areas. The color identifier identifies the colors of the surfaces based on output signals from the corresponding color measuring areas.

Color identifying device for identifying colors of reaction surfaces produced by chemical reaction and gas identifying device

In a micro-bridge structure in which a temperature detecting portion(diaphragm) including a bolometer thin filmis supported by a supporting portionin a state floated from a circuit substrate, a reflective filmreflecting a THz wave is formed on the circuit substrate, an absorbing filmabsorbing the THz wave is formed on the temperature detecting portion, and an optical resonance structure is formed by the reflective filmand the temperature detecting portion. And a gap between the reflective filmand the temperature detecting portionis set approximately &#xbc; of a wavelength of an infrared ray on the basis of the wavelength of the infrared ray (in a range of approximately 1.5 to 2.5 &#x3bc;m, for example), and a sheet resistance of the temperature detecting portionis set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (in a range of approximately 10 to 100 &#x3a9;/sq.). By this arrangement, the absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.

Bolometer-type THz-wave detector

In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.

Integrated circuit device with temperature monitor members

In a bolometer-type THz-wave detectorin a micro-bridge structure in which a temperature detecting portion(diaphragm) including a bolometer thin filmis supported by a supporting portionin a state suspended from a circuit substrate, a member (dielectric cover) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion, and when a refractive index of the dielectric coveris n, thickness is t, and a wavelength of the THz wave is &#x3bb;, a setting is made so as to have at &#x3e;&#x3bb;, and a gap between the dielectric coverand the temperature detecting portionis set at integral multiples of &#x3bb;/2. By this arrangement, an absorptance of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.

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Tokyo, Japan

Naoki Oda