Jsr Corporation

Mitsubishi Denki Kabushiki Kaisha

Ykk Corporation

Naoki Nishiguchi

Tomoyuki Matsumoto

Tomotaka Shinoda

Takahiro Hayama

Satoshi Kamo

Yasutaka Kamei

Ayako Endo

Hirokazu Sakakibara

Yoshihiko Kinpara

Toshiyuki Kaitani

Takuhiro Taniguchi

Akira Ishii

Katsushi Kobayashi

A photosensitive resin composition contains at least one compound selected from the group consisting of compound (C1) represented by formula (C1), compound (C2) represented by formula (C2), and a multimer of the compound (C2). Z each independently represents an oxygen atom or a sulfur atom. Reach independently represents a monovalent hydrocarbon group or a group obtained by substituting at least one hydrogen atom in the monovalent hydrocarbon group with a mercapto group, and at least one Ris a group obtained by substituting at least one hydrogen atom in the monovalent hydrocarbon group with a mercapto group when p is 1 and when p is an integer of 2 or more and all of Z is an oxygen atom. Rand Reach independently represent a divalent hydrocarbon group, and Rrepresents a glycoluril ring structure or an isocyanul ring structure.

Photosensitive resin composition, method for producing resist pattern film, and method for producing plated formed product

A photosensitive resin composition contains polymer (A) having an acid dissociative group, photoacid generator (B), and solvent (C), the solvent (C) containing 80 to 95% by mass of propylene glycol monomethyl ether acetate (C1) and 5 to 18% by mass of 3-methoxybutyl acetate (C2), a content ratio of other solvent (C3) in the solvent (C) being 0 to 10% by mass, and a content ratio of the solvent (C) contained in the photosensitive resin composition being less than 60% by mass.

Photosensitive resin composition, method for producing resist pattern film, method for producing plated formed product, and method for producing tin-silver plated-formed product

The present photosensitive resin composition includes a polymer (A) having a structural unit (a1) represented by a formula (a1), a structural unit (a2) represented by a formula (a2), and a structural unit (a3) represented by a formula (a3), and a photoacid generator (B). In the formulae (a1) to (a3), R, R, and Reach independently represent an organic group having 1 to 10 carbon atoms; Rrepresents a substituted or non-substituted alkyl group having 1 to 10 carbon atoms; Rrepresents a hydrogen atom, a substituted or non-substituted alkyl group having 1 to 10 carbon atoms, or a halogen atom; Rand Reach independently represent an acid dissociable group; Rrepresents a hydroxyaryl group; and l, m and n independently represent an integer from 0 to 10.

Photosensitive resin composition, method for forming resist pattern, method for manufacturing plated molded article, and semiconductor apparatus

A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3&#xd7;10to 1.5&#xd7;10per mL.

Semiconductor treatment composition and treatment method

A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content M(ppm) and a sodium content M(ppm) that satisfy M/M=1&#xd7;10to 1&#xd7;10.

In the synchronous motor controlling apparatus and method of the invention, a current is detected and subjected to coordinate transformation onto &ggr;-&dgr; axis assumed for the rotor. A correction term is obtained on the basis of the derived current and an arbitrarily given correction current instruction. A &ggr;-&dgr; axis voltage instruction is computed by adding a value obtained by multiplying the correction term by a proper gain to a voltage equation in a steady state of the synchronous motor. Consequently, a control method of small computational load, which does not require gain adjustment according to the inertia of a motor load, can be attained.

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Tokyo, Japan

Naoki Nishiguchi