Shin-etsu Handotai Co., Ltd.

Naoki Naito

Atsuo Uchiyama

Toshio Ishikawa

Fumiaki Maruyama

Naoyuki Takamatsu

Kazunori Koshikawa

Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1&#xd7;10atoms/cmor less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/mor less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.

[object Object]

Wafer and epitaxial wafer, and manufacturing processes therefor

Wafer basket

A wafer basket in which the recesses provided for the engagement with the basket lifter are each formed with a dent at the upper and innermost corner of the recess, and a pair of stays are provided at the lower bent portions of the side walls in a manner such that the upper edges of the stays are of the same height and elevated to the extent that the downward movement of the wafers is checked by the stays rather than by the ribs.

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Nishishirakawa-gu, Japan

Naoki Naito