Disco Corporation

Naoki Murazawa

Kunimitsu Takahashi

Kazuma Sekiya

Kazuya Hirata

Yusaku Ito

Nobuyasu Kitahara

Joel Koerwer

Hiroto Yoshida

Kuo Wei Wu

Apparatus for inspecting the tension of a tape adhered to an annular frame having, in the center thereof, an opening for accommodating a wafer includes: a frame support section that supports the annular frame, a light source that applies light toward the tape, an imaging camera that captures, through the tape, the light applied from the light source, a first polarizing plate disposed between the tape and the light source, and a second polarizing plate disposed between the tape and the imaging camera and positioned so as to shield the light of linearly polarized light transmitted through the first polarizing plate. If distortion is generated in a polarization plane of the light due to application, onto the tape, of the light of the linearly polarized light transmitted through the first polarizing plate, the light is transmitted through the second polarizing plate, and the imaging camera images the transmitted light.

Inspection apparatus

A protective film thickness measuring method includes a step of applying light to a top surface of a wafer in a state in which no protective film is formed and measuring a first reflection intensity of the light reflected from the top surface, a step of forming the protective film including a light absorbing material, a step of irradiating the protective film with exciting light of a wavelength at which the light absorbing material fluoresces and measuring a second reflection intensity including fluorescence of the protective film and the light reflected from the top surface, and a step of excluding reflection intensity of patterns formed on the top surface, by subtracting the measured first reflection intensity from the measured second reflection intensity, and calculating fluorescence intensity of the protective film.

Protective film thickness measuring method

A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Method and apparatus for detecting facet region, wafer producing method, and laser processing apparatus

A recess or through-hole forming method for forming a substrate with a recess or a through-hole along a thickness direction of the substrate, the method including: a modified region forming step of applying a laser beam of such a wavelength as to be transmitted through the substrate to the substrate, with a focal region of the laser beam positioned inside the substrate, to form a column-shaped modified region which is exposed to a surface of the substrate and extends along the thickness direction of the substrate; and an etching step of etching the modified region to form the substrate with the recess or the through-hole, after the modified region forming step is performed.

Recess or through-hole forming method and electrode forming method

A facet region detecting method for detecting a facet region of an SiC single crystal ingot includes: an irradiation step of irradiating a first surface of the SiC single crystal ingot with light; a fluorescence intensity detection step of detecting the intensity of fluorescence generated from the first surface of the SiC single crystal ingot by the light; and a determination step of determining a region of the first surface where the fluorescence intensity is comparatively low as a facet region and determining a region where the fluorescence intensity is comparatively high as a non-facet region.

Growing community of inventors

Tokyo, Japan

Naoki Murazawa