Japan Pionics Co., Ltd.

Sumitomo Electric Industries, Limited

Naoki Muranaga

Kenji Otsuka

Satoshi Arakawa

Kikurou Takemoto

Tomohisa Ikeda

There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Production apparatus for producing gallium nitride semiconductor film and cleaning apparatus for exhaust gas

Disclosed is a method for cleaning of the harmful gas, the method comprising mixing harmful gas, discharged from reaction processes using organic metal compounds as the reaction raw materials, with oxygen or air and thereafter bringing the mixture into contact with a catalyst obtained by carrying a noble metal on an inorganic support, a catalyst comprising at least one metal oxide selected from vanadium oxide, chromium oxide, manganese oxide, iron oxide, copper oxide, silver oxide, cobalt oxide and nickel oxide or a catalyst obtained by carrying the metal oxide on an inorganic support, at temperatures between 100&deg; C. and 800&deg; C. to clean the harmful gas. Disclosed also is an apparatus used in the method. The invention ensures that harmful components can be purified in an efficient manner without discharging organic compounds and a large amount of carbon dioxide after the harmful gas is purified, requiring no aftertreatment.

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Kanagawa, Japan

Naoki Muranaga