Tokyo Electron Limited

Sumitomo Electric Industries, Limited

Sony Corporation

Sumitomo Metal Industries, Inc.

Tokyo Electron Limi Ted

Naoki Matsumoto

Chishio Koshimizu

Jun Yoshikawa

Manabu Iwata

Yohei Yamazawa

Akira Koshiishi

Keiji Ishibashi

Takuji Okahisa

Masashi Saito

Noriyuki Kobayashi

Hidetoshi Hanaoka

Masaru Sugimoto

Kunihiko Hinata

Ryuji Ohtani

Kazuo Kibi

Daisuke Yano

Satoshi Tanaka

Kensaku Motoki

Koji Koyama

Hidenori Mikami

Seiji Nakahata

Akihiro Hachigo

Koji Uematsu

Manabu Sato

Toshihiro Hayami

Naoki Mihara

Wataru Yoshikawa

Hiroki Yamazaki

Michitaka Aita

Yusuke Yoshizumi

Masaru Sasaki

Fumitake Nakanishi

Takahiro Senda

Kazuyuki Kato

Masao Ikeda

Kazuki Moyama

Koshi Tamamura

Masahiro Nakayama

Fumitaka Sato

Yoshinobu Ohya

Yuki Hiromura

Toru Ito

Kazuto Takai

Yoshiyuki Yamamoto

Ryu Hirota

Kazushi Kaneko

Kiyotaka Ishibashi

Masayuki Kohno

Hitoshi Kasai

Takehiro Tanikawa

Hideyuki Ijiri

Hideo Kato

Yusuke Yoshida

Yoshinobu Hayakawa

Takuya Yanagisawa

Yuki Seki

Yuki Kawada

Shunsuke Fujita

Kazuki Takahashi

Lee Chen

Osamu Morita

Tatsuo Matsudo

Toshio Nakanishi

Naohiko Okunishi

Toshihisa Ozu

Caizhong Tian

Takashi Suzuki

Ryou Son

Takashi Tsukamoto

Kazuo Murakami

Yugo Tomita

Sumie Segawa

Caiz Hong Tian

Masanobu Honda

Toshihisa Nozawa

Makoto Kiyama

Peter L G Ventzek

Kyoko Okita

Shinji Kubota

Takayuki Nishiura

Masahide Iwasaki

Hiroshi Nakamura

Takashi Dokan

Yoshinobu Ooya

Toshiaki Hongoh

Masato Irikura

Nobuyuki Okayama

Hideaki Tanaka

Hideki Osada

Yutaka Matsui

Hiroshi Mabuchi

Kazunori Funazaki

Tatsuya Nishimoto

Toshiki Ebata

Youichi Nakayama

Shingo Takahashi

Kyoichi Komachi

Toshiyuki Kobayashi

Yoshiyasu Sato

Kenji Sudou

A plasma processing apparatus includes a vacuum-exhaustible processing container, an electrode installed in the processing container, a plurality of power feeding portions connected to a peripheral portion of a back surface of the electrode, a high-frequency power supply configured to supply high-frequency power to the electrode through the plurality of power feeding portions, and a control unit. The control unit is configured to control the plasma processing apparatus to periodically apply the high-frequency power to each of the plurality of power feeding portions.

Plasma processing apparatus and high-frequency power application method of plasma processing apparatus

A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

Plasma processing apparatus

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 &#x3bc;m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 &#x3a9;/sq or less.

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H&#x2014;SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8&#xb0; relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within &#xb1;5&#xb0; relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.

Method for manufacturing silicon carbide substrate, method for manufacturing silicon carbide epitaxial substrate, and method for manufacturing silicon carbide semiconductor device

In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis.

Antenna device, radiation method of electromagnetic waves, plasma processing apparatus, and plasma processing method

A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Plasma processing apparatus and method

A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

Antenna, plasma processing device and plasma processing method

A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method includes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

Microwave control method

Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.

Plasma processing apparatus and plasma processing method

An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic waves in the first waveguide, two inner conductors disposed at different distances from the tube axis and connected to the dielectric window include coaxial conversion parts which cause propagation of the electromagnetic waves dispersed by the dispersion part to direct to the dielectric window side, a body length of the inner conductor most distant from the tube axis, out of body lengths of the two inner conductors, is longer, and a front surface of the dielectric window does not have irregularities.

Antenna device and plasma processing apparatus

A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

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Miyagi, Japan

Naoki Matsumoto