Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Other

Naoki Makita

Misako Nakazawa

Takuya Matsuo

Takashi Funai

Toshiji Hamatani

Yoshitaka Yamamoto

Tadayoshi Miyamoto

Hideto Ohnuma

Katsumi Nomura

Setsuo Nakajima

Aiko Shiga

Toru Takayama

Hidekazu Miyairi

Masaki Saitoh

Hiroshi Nakatsuji

Hiroki Mori

Masaki Yamanaka

Masao Moriguchi

Masashi Maekawa

Yasuhiro Mitani

Tsukasa Shibuya

Satoru Tone

Takamasa Kousai

Takamasa Kosai

Koichiro Tanaka

Mitsuhiro Ichijo

Kenji Kasahara

Tatsuo Morita

Takashi Hamada

Chiho Kokubo

Shuhei Tsuchimoto

Masahiro Fujiwara

Hiromi Sakamoto

Hidehiko Yamashita

Shinya Morino

Hajime Saitoh

Hideo Izawa

Masato Hashimoto

Muneyuki Motohashi

Michinori Iwai

Takayuki Tsutsumi

A semiconductor device () includes: a substrate (); a first thin film transistor (A) supported on the substrate (), the first thin film transistor (A) having a first active region () which mainly contains a crystalline silicon; and a second thin film transistor (B) being supported on the substrate (), the second thin film transistor (B) having a second active region () which mainly contains an oxide semiconductor having a crystalline portion.

Semiconductor device and method for manufacturing same

In at least one operation control TFT (N,P) in a control circuit (), an impurity of a type that generates an impurity level of a channel region () is included in the channel region () as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions () of other TFTs () of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs () of the same type.

Thin-film transistor substrate, display device provided with same, and method for producing thin-film transistor substrate

A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (), and the second thin film transistor has a second semiconductor layer (). The first semiconductor layer () and the second semiconductor layer () are formed from one and the same film. Each of the first semiconductor layer () and the second semiconductor layer () has a slope portion () positioned in the periphery and a main portion () which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion () of the first semiconductor layer with higher density than the main portion () of the first semiconductor layer, the main portion () of the second semiconductor layer, and the slope portion () of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.

Semiconductor device, and manufacturing method for same

A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor () and a p-channel type second thin film transistor () are provided on the plane of a substrate (). A first semiconductor layer () of the first thin film transistor () has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (). A second semiconductor layer () has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (). The inclination angle of the side face of the second semiconductor layer () relative to the plane of the substrate () is larger than the inclination angle of the side face of the first semiconductor layer () relative to the plane of the substrate ().

Semiconductor device, display device, and method for manufacturing semiconductor device

A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

Semiconductor device, method for manufacturing same, and display device

A semiconductor deviceincludes a thin-film transistorand a thin-film diode. The thin-film transistorincludes a semiconductor layer Swith a channel region, a source region and a drain region, a gate electrodethat controls the conductivity of the channel region, and a gate insulating filmarranged between the semiconductor layer and the gate electrode. The thin-film diodeincludes a semiconductor layer Swith at least an n-type regionand a p-type region. The respective semiconductor layers Sand Sof the thin-film transistorand the thin-film diodeare portions of a single crystalline semiconductor layer, obtained by crystallizing the same crystalline semiconductor film, but have been crystallized to mutually different degrees.

Display device

A semiconductor deviceincludes a substrate and an optical sensor unitformed on the substrate for sensing light and for generating a sensing signal, the optical sensor unitincluding a first thin film diodeA for detection of light in a first wavelength range, a second thin film diodeB detecting light in a second wavelength range that contains wavelengths longer than the longest wavelength in the first wavelength range. The first thin film diodeA and the second thin film diodeB are connected in parallel to each other. The sensing signal is generated based on the output from one of the first thin film diodeA and the second thin film diodeB. By this means, the wavelength range that can be detected by the optical sensor unit can be expanded and the sensing sensitivity can be increased.

Semiconductor device and display device

A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer () of the thin film transistor and a semiconductor layer () of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer () of the thin film diode is greater than the thickness of the semiconductor layer () of the thin film transistor, and the surface of the semiconductor layer () of the thin film diode is rougher than the surface of the semiconductor layer () of the thin film transistor.

A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer () of the thin film transistor and a semiconductor layer () of the thin film diode are both crystalline semiconductor layers. The semiconductor layer () of the thin film transistor and the semiconductor layer () of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer () of the thin film diode is greater than the thickness of the semiconductor layer () of the thin film transistor. The difference between the thickness of the semiconductor layer () of the thin film transistor and the thickness of the semiconductor layer () of the thin film diode is greater than 25 nm. The surface roughness of the semiconductor layer () of the thin film diode is larger than the surface roughness of the semiconductor layer () of the thin film transistor. As a result, the thin film transistor and the thin film diode achieve respective required characteristics.

A semiconductor device includes at least one thin-film transistor, which includes: a crystalline semiconductor layerincluding a regionto be a channel region and source and drain regions; a gate electrodefor controlling the conductivity of the regionto be a channel region; a gate insulating filmarranged between the semiconductor layerand the gate electrode; and source and drain electrodesconnected to the source and drain regions, respectively. At least one of the source and drain regionscontains an element to be a donor or an acceptor and a rare-gas element, but the regionto be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.

Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device

A semiconductor device includes at least one thin film transistor including a semiconductor layer that has a crystalline region including a channel region, a source region and a drain region, a gate insulating film disposed at least on the channel region, the source region and the drain region of the semiconductor layer, and a gate electrode arranged so as to oppose the channel region via the gate insulating film. At least a portion of the semiconductor layer includes a catalyst element capable of promoting crystallization, and the semiconductor layer further includes a gettering region that includes the catalyst element at a higher concentration than in the channel region or the source region and the drain region. The thickness of the gate insulating film on the gettering region is smaller than that on the source region and the drain region, or the gate insulating film is not disposed on the gettering region.

Semiconductor device and method for manufacturing the same

A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1&#xd7;10/cmto 1&#xd7;10/cmand belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5&#xd7;10/cmto 3&#xd7;10/cmand belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.

Semiconductor device and manufacturing method thereof

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Nara, Japan

Naoki Makita