Renesas Electronics Corporation

Renesas Technology Corp.

Mitsubishi Heavy Industries Thermal Systems, Ltd.

Naoki Kuroda

Yusuke Sato

Satoshi Matsumoto

Kenichi Murakami

Tomoaki Kudaishi

Ryota Sato

Masashi Okano

Shinji Moriyama

Nobuyoshi Maejima

Miki Yamada

A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

RF power module

Growing community of inventors

Tokyo, Japan

Naoki Kuroda