Sharp Kabushiki Kaisha Corporation

Naoki Koide

Kenji Kimoto

Junichi Nakamura

Ryohsuke Yamanaka

Liyuan Han

Yuta Matsumoto

Atsushi Fukui

Yoshitaka Yamamoto

Takeshi Kamikawa

Takehito Mitate

Toshihiko Sakai

Takanori Nakano

Kazuya Tsujino

Masatomi Harada

Liumin Zou

Satoshi Murakami

Soichi Iwamura

Masamichi Kobayashi

Nobuhiro Fuke

Naoki Asano

Takeshi Hieda

Ashraful Islam

Mingju Yang

Yasuo Chiba

Yuji Komatsu

Hisako Imai

Yasue Nagano

Masakazu Ishikawa

There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a silicon substrate (), a first non-crystalline semiconductor layer (), a second non-crystalline semiconductor layer (), a first electrode (), and a second electrode (). One electrode () includes first conductive layers (), and second conductive layers (). The first conductive layers () have a first metal as a main component. The second conductive layers () contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (), and are disposed to be closer to the silicon substrate () than the first conductive layers ().

Photoelectric conversion device

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a semiconductor substrate (), a first semiconductor layer (), a second semiconductor layer (), a first electrode (), and a second electrode (). The first semiconductor layer () has a first conductive type. The second semiconductor layer () has a second conductive type opposite to the first conductive type. The first electrode () is formed on the first semiconductor layer (). The second electrode () is formed on the second semiconductor layer (). At least one electrode of the first electrode () and the second electrode () includes a plurality of metal crystal grains. The average crystal grain size of the metal crystal grains in the in-surface direction of electrode is greater than the thickness of the electrode.

Photoelectric conversion element, photoelectric conversion module, and solar photovoltaic power generation system

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a semiconductor substrate (), a first semiconductor layer (), a second semiconductor layer (), a first electrode (), and a second electrode (). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer () formed on the first semiconductor layer, and a first metal layer () formed on the first transparent conductive layer. The first metal layer includes a plurality of metal crystal grains in which the average crystal grain size in the in-surface direction of the first metal layer is greater than the thickness of the first metal layer.

There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (). The n-type single crystal silicon substrate () includes a central region () and an end-portion region (). The central region () is a region which has the same central point as the central point of the n-type single crystal silicon substrate () and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (). The central region () has a thickness t. The end-portion region () is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (). The end-portion region () is disposed on an outside of the central region () in an in-plane direction of the n-type single crystal silicon substrate (), and has a thickness twhich is thinner than the thickness t. The end-portion region () has average surface roughness which is smaller than average surface roughness of the central region ().

Photoelectric conversion element and solar cell module provided with same

The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.

Photoelectric conversion element and method for manufacturing same

The present invention aims to improve the photoelectric current of a dye-sensitized solar cell module and produce a high power dye-sensitized solar cell. The present invention provides a dye-sensitized solar cell module comprising at least two photoelectric conversion elements each comprising a transparent conductive layer, a porous photoelectric conversion layer adsorbing a dye, an electrolytic layer, a catalyst layer, and a conductive layer on a transparent substrate, wherein the respective photoelectric conversion elements are different in at least one among the layering order of the respective layers composing the photoelectric conversion elements; the type and composition of the materials for the respective layers; the particle diameter in the case the materials of the respective layers are granular; the thickness and width of the respective layers; the form of the respective layers; and the open circuit voltage of the photoelectric conversion elements, and thereby the aim is achieved.

Dye-sensitized solar cell module

A photovoltaic cell comprises: an anode electrode including a conductive support and a porous semiconductor layer; a photosensitive dye; a charge transport layer; and a counter electrode support, wherein the anode electrode has the property of causing cathode luminescence having a luminous peak wavelength in a visible region and shows a haze rate H of 60% or more at a wavelength in the visible region.

Photovoltaic cell including porous semiconductor layer, method of manufacturing the same and solar cell

A stacked photoelectric conversion device comprising at least two photoelectric conversion element layers sandwiched between a first electrode layer and a light receiving second electrode layer, and at least one intermediate layer sandwiched between any two of said at least two photoelectric conversion element layers, wherein the intermediate layer has uneven surfaces on a light receiving side and a light outgoing side, the uneven surface on the latter having a greater average level difference than that on the former.

Stacked photoelectric conversion device

An improved jitter detecting method and an apparatus thereof, for detecting jitter generated in a reproduced video signal of a VTR or video disc wherein a frequency-modulated carrier of a video signal is recorded by synchronizing the leading edge of a sync signal with the phase of the forefront carrier of a constant frequency carrier train corresponding to a sync tip for every horizontal period at the time of frequency-modulation. From the reproduced frequency-modulated carrier, the phase-reset constant frequency carrier train is utilized as a reference burst signal, thereby to be capable of removing a time-base error by detecting a specific zero-crossing timing of the carrier burst through a bandpass filter based on the trailing edge of a frequency-modulated sync signal during reproduction.

Circuit for detecting and compensating for jitter produced by a

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Osaka, Japan

Naoki Koide