Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Naoki Kohara

Mikihiko Nishitani

Takahiro Wada

Takayuki Negami

Masatoshi Kitagawa

Taisuke Sawada

Akira Takamori

Kazuhiro Onaka

Toshio Matsuda

Nobuyuki Iwamoto

Takeshi Uenoyama

Masaharu Terauchi

Yasuhiro Hashimoto

Noritaka Ichinomiya

Mitsusuke Ikeda

Takafumi Tsushima

A magnetic sensor includes a first half-bridge circuit, a second half-bridge circuit, and a holding member. The first half-bridge circuit includes a first magnetoresistive effect element and a second magnetoresistive effect element. The second half-bridge circuit includes a third magnetoresistive effect element and a fourth magnetoresistive effect element. The first magnetoresistive effect element detects a magnetic field aligned with an X-axis. The second magnetoresistive effect element detects a magnetic field aligned with a Y-axis. The third magnetoresistive effect element detects a magnetic field aligned with a first axis. The fourth magnetoresistive effect element detects a magnetic field aligned with a second axis.

Magnetic sensor and magnetic detection system

A position detection system includes a magnetic pole block and a magnetic sensor. The magnetic pole block includes a plurality of magnetic poles arranged in a first direction. The plurality of magnetic poles are arranged such that N poles and S poles are alternately arranged as the plurality of magnetic poles in the first direction. At least one member selected from the magnetic pole block and the magnetic sensor is movable in the first direction with respect to the other member. The magnetic sensor includes a plurality of magnetoresistive effect elements and a bias magnet. The plurality of magnetoresistive effect elements are arranged side by side in the first direction. The bias magnet applies, to the plurality of magnetoresistive effect elements, a magnetic field having an orientation toward one of two opposite sides of the first direction.

Position detection system

A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layerwhich is coated with the SiN layerTi layersand, Au layersand, heat sink layerand solder layerSemiconductor laser elementis placed and fixed on Au layer. Heat sink layeris inserted between Au layerand Ti layerand is approximately 20 &#x3bc;m thick. Reflection unitfor reflecting laser beams LB includes at the surface thereof Al layerand dielectric layeras a reflection layer that provides a high refractive index for blue light laser beams.

Semiconductor laser apparatus and production method thereof

A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer, which is coated with the SiN layer, Ti layersand, Au layersand, heat sink layer, and solder layer. Semiconductor laser elementis placed and fixed on Au layer. Heat sink layeris inserted between Au layerand Ti layerand is approximately 20 &#x3bc;m thick. Reflection unitfor reflecting laser beams LB includes at the surface thereof Al layerand dielectric layeras a reflection layer that provides a high refractive index for blue light laser beams.

According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.

Flexible thin film capacitor and method for producing the same

A Pt/Ti film is formed on a substrate, and the Pt/Ti film is patterned in to a bottom electrode. Subsequently, a SrTiO film, that is, a dielectric film, is formed on the substrate by sputtering using a mixture of an Ar gas, an O gas and a N gas as a film forming gas. The SrTiO film is patterned into a capacitor dielectric film formed on the bottom electrode. A top electrode is then formed on the capacitor dielectric film. Since a N gas is used as the film forming gas in addition to an Ar/O gas, a SrTiO film with a high dielectric constant and small leakage can be formed at a low temperature. By using this SrTiO film, a thin film capacitor with high capacitance and good dielectric characteristics can be obtained.

Dielectric film and method of fabricating the same

Flexible thin film capacitor having an adhesive film

The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.

Method and apparatus for manufacturing chalcopyrite semiconductor thin

A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.

Solar cell and method for manufacturing the same

A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution where X and Y are in the range of the following Equation:

Thin film solar cell and method for manufacturing the same

A solar cell includes a compound semiconductor, which is a laminated film having compound semiconductor layers, and low melting point glass. When the solar cell is heated by fire, the low melting point glass melts to seal the compound semiconductor so that toxic substances contained in the compound semiconductor are not released into the air.

Growing community of inventors

Osaka, Japan

Naoki Kohara