Hitachi, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Renesas Electronics Corporation

Other

Mitsubishi Materials Corporation

Jeol Ltd.

Renesas Technology Corp.

Mistubishi Materials Corporation

Naoki Kato

Kazuo Yano

Yasuhiko Sasaki

Yuji Motomura

Naofumi Takenaka

Kimitaka Kadowaki

Shunzo Yamashita

Norihisa Mori

Kiyotaka Nakaya

Kenji Kubota

Yohei Akita

Shigeru Honda

Masaru Takakura

Kunihito Rikino

Ichiro Kono

Yuki Taninouchi

Katsuyoshi Suzuki

Tetsuya Yamada

Fumio Arakawa

Shuichi Sakamoto

Shigeru Oho

Yoshie Tarutani

Shinya Fujita

Jiro Ikeda

Kesami Hagiwara

Iwao Suzuki

Mami Watanabe

Akihiko Hyodo

Satoshi Yanaura

Kyoji Kinokiri

Kousuke Haraga

Toshiro Tsukahara

Yuki Inoue

Hiromitsu Yamada

Kenta Morishima

Hidetoshi Chikata

Shigehisa Aoki

Eiji Konoshima

Yoshiaki Miyazaki

Jun Sakiyama

Hiroaki Nakayama

Kenzi Okada

Jyunichi Kumagai

When heating is being performed, and a temperature detected by a temperature sensor is lower than a first determination value, a controller opens the flow rate control valve corresponding to a heat exchanger, of the third heat exchangers, to which a request for air conditioning has not been made, and closes the flow rate control valve corresponding to a heat exchanger, of the third heat exchangers, to which the request for air conditioning has been made. When heating is being performed, and the temperature detected by the temperature sensor is higher than a second determination value, the controller opens the flow rate control valve corresponding to the heat exchanger to which the request for air conditioning has been made, and closes the flow rate control valve corresponding to the heat exchanger to which the request for air conditioning has not been made.

Controller of air conditioning apparatus, outdoor unit, relay unit, heat source unit, and air conditioning apparatus

An air conditioning apparatus has a first mode and a second mode as operation modes. In the first mode, a degree of opening of a first flow rate adjustment valve is fixed to a first degree of opening smaller than 100% and greater than 0%, and an operation frequency of a compressor is varied in accordance with air conditioning performance required of a third heat exchanger. In the second mode, the degree of opening of the first flow rate adjustment valve is varied in accordance with air conditioning performance required of the third heat exchanger. When a difference between the air conditioning performance required of the third heat exchanger and air conditioning performance offered by the third heat exchanger becomes greater than a determination value, the operation mode is changed from the first mode to the second mode.

Controller of air conditioning system, outdoor unit, relay unit, heat source apparatus, and air conditioning system

An air conditioning apparatus includes, a first heat exchanger, a second heat exchanger configured to exchange heat between a first heat medium and a second heat medium, flow rate control valves, and a pump. In a heating mode, a controller is configured to open the flow rate control valve corresponding to a heat exchanger, of the third heat exchangers, to which a request for air conditioning has been made, and to close the flow rate control valve(s) corresponding to a heat exchanger(s), of the third heat exchangers, to which the request for air conditioning has not been made. In a defrosting mode, when a temperature of the second heat medium is lower than a first determination temperature, the controller is configured to open at least one of the flow rate control valve(s) corresponding to the heat exchanger(s) to which the request for air conditioning has not been made.

When a state in which a driving voltage of a pump is set to an upper limit voltage and an opening degree of at least one of a plurality of flow rate control valves is set to a maximum opening degree continues for a first determination time period, an operation frequency of a compressor is raised at a first time so as to increase an amount of heat exchange by a second heat exchanger. When an operation stop request is input, or an indoor temperature reaches a set temperature, in at least one of a plurality of third heat exchangers after the first time, the operation frequency of the compressor is lowered or the driving voltage of the pump is lowered.

A logic BIST circuits concurrently execute a first scan test for a scan chain as a target and a second scan test for a scan chain as a target, when they are set to a an LBIST mode, and execute the first scan test without executing the second scan test, when they are set to a simultaneous test mode. Memory BIST circuits execute a test for memory circuits concurrently with the first scan test, when they are set to the simultaneous test mode.

Semiconductor device and test method for semiconductor device

Provided is an image processing apparatus, which is configured to perform smoothing processing on a mapping image obtained by detecting a signal emitted from one of a plurality of analysis areas of a specimen. The image processing apparatus includes: a memory; and a processor configured to execute a program stored in the memory to perform: processing for calculating a difference between a maximum value and a minimum value of signal intensity data being intensity information on the signal of one of pixels within the mapping image, and determining a degree of smoothing to be used for the smoothing processing based on the difference; and processing for performing the smoothing processing based on the determined degree of smoothing.

Image processing apparatus, image processing method, and analyzer

A tin-plated copper alloy terminal material in which an Sn-based surface layer is formed on a surface of a base material that is made of copper or a copper alloy, and a Cu&#x2014;Sn alloy layer and an Ni layer or an Ni alloy layer are sequentially formed between the Sn-based surface layer and the base material from the Sn-based surface layer side: the Cu&#x2014;Sn alloy layer is a layer that is formed only of an intermetallic compound alloy which is obtained by substituting some of Cu in CuSnalloy with Ni; and parts of the Cu&#x2014;Sn alloy layer are exposed from the Sn-based surface layer, thereby forming a plurality of exposed portions; an average thickness of the Sn-based surface layer is from 0.2 &#x3bc;m to 0.6 &#x3bc;m (inclusive); and an area rate of the exposed portions of the Cu&#x2014;Sn alloy layer relative to a surface area of is 1% to 40% (inclusive).

Tin-plated copper-alloy terminal material

A scatter diagram display device includes a principal component analysis section that performs principal component analysis on intensity or concentration map data that represents each element, a priority level setting section that sets a priority level to each element based on the results of the principal component analysis performed by the principal component analysis section, and a display control section that performs a control process that arranges a plurality of scatter diagrams generated by combining each element based on the priority level that has been set to each element by the priority level setting section, and displays the plurality of scatter diagrams on a display section.

Scatter diagram display device and surface analyzer

This electrolytic refining method of high-purity electrolytic copper includes: performing electrolysis by using an electrolyte which includes a copper nitrate solution, a cathode made of stainless steel, and an anode made of copper so as to deposit high-purity electrolytic copper on the cathode.

High-purity electrolytic copper and electrolytic refining method thereof

Tin-plated copper-alloy material for terminal in which: a Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu&#x2014;Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu&#x2014;Sn alloy layer is an alloy layer containing CuSnas a major proportion and having a compound in which a part of Cu in the CuSnis substituted by Ni and Si in the vicinity of a boundary face at the substrate side; an average thickness of the Sn-based surface layer is 0.2 &#x3bc;m or more and 0.6 &#x3bc;m or less; an oil-sump depth Rvk of the Cu&#x2014;Sn alloy layer is 0.2 &#x3bc;m or more; an area rate of the Cu&#x2014;Sn alloy layer exposed at a surface of the Sn-based surface layer is 10% or more and 40% or less; and dynamic friction coefficient is 0.3 or less.

Tin-plated copper-alloy material for terminal having excellent insertion/extraction performance

A phase analyzer includes a principal component analysis section that performs principal component analysis on elemental map data that represents an intensity or concentration distribution corresponding to each element to calculate a principal component score corresponding to each unit area of the elemental map data, a scatter diagram generation section that plots the calculated principal component score to generate a scatter diagram of the principal component score, a peak position detection section that detects a peak position from the scatter diagram, a clustering section that calculates a distance between each point and each peak position within the scatter diagram, and classifies each point within the scatter diagram into a plurality of groups based on the distance, and a phase map generation section that generates a phase map based on classification results of the clustering section.

Phase analyzer, phase analysis method, and surface analyzer

Tin-plated copper-alloy material for terminal having: a substrate made of Cu or Cu alloy; an Sn-based surface layer formed on a surface of the substrate; and a Cu&#x2014;Ni&#x2014;Sn alloy layer including Ni formed between the Sn-based surface layer and the substrate, in which the Cu&#x2014;Ni&#x2014;Sn alloy layer is made of: fine Cu&#x2014;Ni&#x2014;Sn alloy particles; and coarse Cu&#x2014;Ni&#x2014;Sn alloy particles, an average thickness of the Sn-based surface layer is not less than 0.2 &#x3bc;m and not more than 0.6 &#x3bc;m, an area ratio of the Cu&#x2014;Ni&#x2014;Sn alloy layer exposed at a surface of the Sn-based surface layer is not less than 10% and not more than 40%, and a coefficient of kinetic friction of the tin-plated copper-alloy material for terminal is not more than 0.3.

Tin-plated copper-alloy material for terminal and method for producing the same

A microcomputer includes a first CPU, a first bus, a first memory, a second CPU, a second bus, and a second memory. The first memory and the second memory are arranged in address spaces individually managed by the first CPU and the second CPU corresponding to the memories. An address translation circuit is provided. When a task so programmed to have a data area in the first memory is transferred to the second memory and executed by the second CPU, the address translation circuit carries out the following processing: the address translation circuit translates an address outputted from the second CPU so that access to the first memory by the task becomes access to the second memory. As a result, the number of access cycles is reduced and degradation in computing capability is avoided when a task is transferred between CPUs for load sharing.

Microcomputer with address translation circuit

There is a need for providing a data processor capable of easily prefetching data from a wide range. A central processing unit is capable of performing a specified instruction that adds an offset to a value of a register to generate an effective address for data. This register can be assigned an intended value in accordance with execution of an instruction. A buffer maintains part of instruction streams and data streams stored in memory. The buffer includes cache memories for storing the instruction stream and the data stream. From the memory, the buffer prefetches a data stream containing data corresponding to an effective address designated by the specified instruction stored in the cache memory. A data prefetch operation is easy because a data stream is prefetched by finding the specified instruction from the fetched instruction stream. Data can be prefetched from a wider range than the use of a PC-relative load instruction.

Data prefetching using indirect addressing

This invention is to provide a technology for taking out trace information externally without lacking under the condition of limited output bandwidth. A semiconductor integrated circuit provided includes: a processing unit which can perform arithmetic processing according to a predetermined program and can output trace information with respect to the arithmetic processing; and a trace compression unit which can compress the trace information outputted from the processing unit. The trace compression unit includes a storage device, a comparator unit which can compare trace information stored in the storage device and the trace information newly outputted from the processing unit, and a trace information compression controller which can compress trace information to be externally outputted, based on the comparison result of the comparator unit. When a content of the trace information is in agreement with that of the trace information already outputted, information indicating the already-outputted trace information is outputted, accordingly the trace information is compressed.

Semiconductor integrated circuit and debugging system

Growing community of inventors

Kodaira, Japan

Naoki Kato