Shin-etsu Handotai Co., Ltd.

Naoki Kamihama

Hiromasa Hashimoto

Kazuya Sato

Yuki Tanaka

A method for selecting a template assembly includes: preparing a template assembly in which a template is concentrically attached on a base ring or a base plate having a larger outer diameter than the template, the template having a back pad to hold a workpiece back surface and a retainer ring positioned on the back pad and to hold an edge portion of the workpiece; non-destructively measuring a height position distribution of the retainer ring and the back pad on the template side of the template assembly, where an outer peripheral edge surface of the base ring or the base plate serves as a reference surface; calculating a flatness of the retainer ring and an average amount of step differences between the retainer ring and the back pad from the measured height position distribution; and selecting the template assembly based on the flatness and the average amount of step differences.

Method for selecting template assembly, method for polishing workpiece, and template assembly

A method for polishing a silicon wafer, including: a first polishing step of polishing a silicon wafer surface by bringing the wafer held by a polishing head into sliding contact with a polishing pad attached to a turn table while supplying an aqueous alkaline solution containing abrasive grains onto the polishing pad, and a second polishing step of polishing the silicon wafer surface by bringing the wafer into sliding contact with the polishing pad while supplying an aqueous alkaline solution containing a polymer without containing abrasive grains onto the polishing pad, wherein the surface temperature of the polishing pad is controlled such that the surface temperature of the polishing pad in the second polishing step is higher than the surface temperature of the polishing pad in the first polishing step by 2&#xb0; C. or more. This successfully achieves both of higher flatness and reduction in surface roughness.

Method for polishing silicon wafer

The present invention provides a method for polishing a wafer including, after unloading and before loading to hold a next wafer to be polished: measurement to measure a depth PDof a concave portion of a template after taking out a polished wafer; calculation to calculate a difference &#x394;PD between the measured depth PDof the concave portion and a depth PDof the concave portion of the template before being used for polishing; and adjustment to adjust polishing conditions for a next wafer to be polished in accordance with the calculated difference &#x394;PD. Consequently, there are provided the method for polishing a wafer and a polishing apparatus which enable adjusting a fluctuation in flatness of each wafer caused due to a fluctuation in numerical value of a pocket depth of a template.

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Nishigo-mura, Japan

Naoki Kamihama