Sumitomo Electric Industries, Limited

Naoki Kaji

Shunsaku Ueta

Kyoko Okita

Takashi Sakurada

Eiryo Takasuka

Sho Sasaki

Hidehiko Mishima

Hirokazu Eguchi

Shin Harada

Tsutomu Hori

In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within &#xb1;15&#xb0; relative to a [&#x2212;1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [&#x2212;1100] direction, and where the first measurement region is irradiated with an X ray in a direction within &#xb1;6&#xb0; relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Silicon carbide single crystal substrate

A silicon carbide substrate whose majority carrier density is 1&#xd7;10cmor greater is such that a standard deviation of minority carrier lifetime as obtained by &#x3bc;-PCD analysis is 0.7 ns or less in an area other than an area within a distance of 5 mm from an outer perimeter of a main surface.

Silicon carbide substrate

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Hyogo, Japan

Naoki Kaji