Kaneka Corporation

Naoki Kadota

Toshiaki Sasaki

Hideki Matsuo

Akihiko Nakajima

Tsukasa Makino

Kazuhiko Umeda

Nobusato Kobayashi

Seiichi Kinoshita

Nobuhisa Ohta

A glass building material according to the present disclosure includes: a first photovoltaic string of a bifacial light-receiving type which has a shape extending in one direction; a second photovoltaic string of a bifacial light-receiving type which is arranged next to the first photovoltaic string in a width direction, and which has a shape extending in the one direction; a first glass substrate which is configured to cover one surface of the first photovoltaic string and one surface of the second photovoltaic string; and a reflective film which is arranged on at least part of another surface side of the first photovoltaic string and another surface side of the second photovoltaic string, which has a transmittance higher than a reflectance in a visible light region, and which has a reflectance higher than a transmittance in a near-infrared region.

Glass building material

A solar cell module mounting system for fixing a plurality of solar cell modules to a side wall of a building, the plurality of solar cell modules include a plurality of first solar cell modules. Each of the plurality of first solar cell modules includes a first side and a second side, the first side being proximal to the side wall of the building, the second side being distally positioned and lower than the first side and/or at a position outwardly away from the side wall part of the building. The plurality of the first solar cell modules are arranged vertically, and a relationship of 16&#x2264;&#x3b8;1&#x2212;(32/11)&#x2264;56 is satisfied for adjacent vertically arranged first solar cell modules.

Solar cell module mounting structure and solar cell module mounting method

A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935&#xb1;5 cmof the crystalline germanium semiconductor is less than 6000 cm. The problem is also solved by a thin-film photoelectric converter having acrystalline germanium semiconductor whose absorption coefficient of infrared-absorption peak at wave number of 960&#xb1;5 cmis less than 3500 cm.

Thin-film photoelectric converter and fabrication method therefor

A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon. A first interface layer which is a substantially intrinsic amorphous silicon semiconductor layer is arranged between the p-type semiconductor layer and the crystalline germanium photoelectric conversion layer.

Growing community of inventors

Osaka, Japan

Naoki Kadota