Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Naoki Iwamasa

Jun Tanaka

Takashi Imoto

Ryoji Matsushima

Takeori Maeda

Akira Tanimoto

Makoto Minaminaka

Yoriyasu Ando

Koichi Miyashita

Masatoshi Kawato

Masaji Iwamoto

Yusuke Dohmae

Masashi Noda

A mold according to an embodiment includes a first surface to be in contact with a surface of a substrate to be processed. A cavity portion recedes in a first direction being away from the first surface. A vent portion recedes in the first direction and is closer to the first surface than the cavity portion. The vent portion communicates with the cavity portion and serves as a discharge path for gas in the cavity portion. A suction portion recedes in the first direction and is farther from the first surface than the vent portion. The suction portion communicates with the vent portion. A first opening/closing portion is provided between the vent portion and the suction portion, and opens and closes or narrows down the discharge path. A second opening/closing portion is provided between the first opening/closing portion and the suction portion, and opens and closes the discharge path.

Mold

In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 &#x3bc;m. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa&#xb7;s.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Yokkaichi, Japan

Naoki Iwamasa