Murata Manufacturing Co., Ltd.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Naoki Iwaji

Hiromasa Saeki

Noriyuki Inoue

Takeo Arakawa

Yasuo Fujii

Frédéric Voiron

Guy Parat

Hiroshi Nakagawa

Julien El Sabahy

Junichi Yoshida

Three-dimensional capacitive structures may be produced by forming a capacitive stack conformally over pores in a region of porous anodic oxide. The porous anodic oxide region is provided on a stack of electrically-conductive layers including an anodization-resistant layer and an interconnection layer. In the pores there is a position having restricted diameter quite close to the pore bottom. In a first percentage of the pores in the region of anodic oxide, a functional portion of the capacitive stack is formed so as to extend into the pores no further than the restricted-diameter position. Cracks that may be present in the anodization-resistant layer have reduced effect on the properties of the capacitive structure. Increased thickness of the anodization-resistant layer can be tolerated, enabling equivalent series resistance of the overall capacitive structure to be reduced.

Three-dimensional capacitive structures and their manufacturing methods

A capacitor that includes a conductive metal base member having a porous portion in a first main surface, a dielectric layer that entirely covers the first main surface and entirely covers side surfaces disposed along a direction orthogonal to the first main surface, an electrode layer covering the dielectric layer, a second extended electrode covering the electrode layer, a first extended electrode covering a second main surface of the conductive metal base member opposite the first main surface, and an insulation layer that insulates the electrode layer and the conductive metal base member from each other.

Capacitor and capacitor mounting configuration

An atomic layer deposition-inhibiting material composed of a fluorine-containing resin that has a fluorine content of 30 at % or greater, has at least one tertiary carbon atom and quaternary carbon atom, and lacks ester groups, hydroxyl groups, carboxyl groups, and imide groups.

Atomic layer deposition-inhibiting material

A capacitor that includes a porous metal base material, a first buffer layer formed by an atomic layer deposition method on the porous metal base material, a dielectric layer formed by an atomic layer deposition method on the first buffer layer, and an upper electrode formed on the dielectric layer.

Capacitor

A capacitor that includes a conductive porous base material with a porous part; an upper electrode opposite the porous part, the upper electrode having, as its main constituent, a material selected from one of ruthenium, platinum, and an alloy of ruthenium and platinum; and a dielectric layer between the upper electrode and the conductive porous base material.

A capacitor that includes a porous metallic base material; a phosphorus-containing layer on the porous metallic base material; a dielectric layer on the phosphorus-containing layer; and an electrode on the dielectric layer.

A capacitor that includes a conductive porous base material; an electrode layer; a dielectric layer between the conductive porous base material and the electrode layer; and at least one silicon-containing layer between the dielectric layer and the electrode layer.

Growing community of inventors

Nagaokakyo, Japan

Naoki Iwaji