Fujifilm Corporation

Naoki Inoue

Michihiro Shirakawa

Akiyoshi Goto

Naohiro Tango

Kei Yamamoto

Hiroo Takizawa

Hideaki Tsubaki

Shuji Hirano

Naoya Hatakeyama

A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

Composition for forming upper layer film, pattern forming method, resist pattern, and method for manufacturing electronic device

One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

Pattern forming method, method for manufacturing electronic device, laminate film, and composition for forming upper layer film

Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

Pattern forming method, resist pattern, method for manufacturing electronic device, and composition for forming upper layer film

The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

Pattern forming method, resist pattern, and process for producing electronic device

A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device

Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100&#xb0; C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Pattern forming method, resist pattern, and method for manufacturing electronic device

A pattern-forming method includes in this order: step () of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation, (C) a resin having one or more groups selected from the specific group as defined in the specification and (D) a solvent; step () of exposing the film with an electron beam or extreme ultraviolet radiation; and step () of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device

An actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) which includes a repeating unit (A) having an ionic structural moiety which generates an acid anion by being decomposed due to irradiation with actinic rays or radiation, a repeating unit (B) having a proton acceptor moiety, and a repeating unit (C) having a group which generates an alkali soluble group by being decomposed by the action of an acid, and the resin (P) has at least one repeating unit which is represented by the general formulae (I) to (III) below as the repeating unit (A) (the reference numerals in the general formulae represent the meaning of the description in the scope of the claims and the specifications). 

Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same

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Haibara-gun, Japan

Naoki Inoue