Tokyo Electron Limited

Sumitomo Metal Industries, Inc.

Octec, Inc.

Ritsumeikan University

Naoki Ikeuchi

Masami Yakabe

Toshiyuki Matsumoto

Muneo Harada

Masato Hayashi

Hiroyuki Hashimoto

Katsuya Okumura

Kenji Tanaka

Tsuyoshi Moriya

Shigeru Ando

Takaya Miyano

Koichi Nakano

Hisashi Fujiwara

Keiichi Enjoji

Takahiko Ooasa

Takahiko Oasa

Shoichi Fukui

A displacement measurement apparatus for a microstructure according to the present invention measures a displacement of the microstructure having a fixed portion electrode including a first electrode and a second electrode and a movable portion electrode located oppositely to the fixed portion electrode. A bias generating circuit applies a bias signal to between the first electrode and the movable portion electrode so that influence of a noise signal on a detection signal picked up from between the second electrode and the movable portion electrode may be reduced. A C/V converting circuit converts a capacitance change that is picked up from between the second electrode and the movable portion electrode into a voltage. A detecting circuit detects a displacement of the movable portion electrode based on the voltage.

Displacement measurement apparatus for microstructure and displcement measurement method thereof

Provided are a data obtaining section () that obtains a time-series data fluctuating in accordance with the plasma conditions, a translation error calculation section () that calculates a determinism providing an indicator of whether the time-series data in the plasma are deterministic or stochastic, from the time-series data that have been obtained in the data obtaining unit (), and an abnormal discharge determination section () that determines that the plasma is under the abnormal discharge conditions, in the case that the value representing the determinism calculated in the determinism derivation unit is less than or equal to a given threshold value, during the plasma generation. Examples of the value representing the determinism include translation error or permutation entropy. In the case the permutation entropy is used as a value representing the determinism, a permutation entropy calculation section is provided.

Method and system for diagnosing abnormal plasma discharge

A speaker unit has a plurality of sound sources each outputting a sound wave. The compressional, sound wave output from the speaker unit arrives, or vibrates air, which moves a movable part of a three-axis acceleration sensor, or a microstructure of a chip to be tested TP. As the movable part thus moves, a value in resistance accordingly varies, and such variation is measured as based on an output voltage provided via a probe. A control unit determines a property of the three-axis acceleration sensor from a value in property as measured or measurement data. Furthermore, the plurality of sound sources can be spaced by a pitch of a predetermined value set as based on their difference in the distance to the movable part of the three-axis acceleration sensor and the wavelength of the test wave to apply a composite test wave to the movable part such that the composite sound wave's composite sound field is maximized.

Device, method and program for inspecting microstructure

In an acceleration sensor detecting inclined displacement of a predetermined article from a basic position, the acceleration sensor () includes a sensor chip having a detection plane including one detection axis or two crossing detection axes detecting the inclined displacement. An axis orthogonal to the detection plane of the sensor chip is disposed in parallel with a standard plane of the article in the basic position. Then, the sensor chip obtains an output signal according to the inclined displacement of the standard plane.

Acceleration sensor and inclination-detecting method

Test sound wave is outputted from a speaker. A movable part of a three-axis acceleration sensor, which is a micro structure of a chip to be tested TP, moves due to the arrival of the test sound wave which is compression wave outputted from the speaker, that is, due to air vibrations. A change in the resistance value that changes in accordance with this movement is measured on the basis of an output voltage that is provided via a probe needles. A control part determines the property of the three-axis acceleration sensor on the basis of the measured property values, that is, measured data.

Device for inspecting micro structure, method for inspecting micro structure and program for inspecting micro structure

A probing card and an inspection apparatus which precisely inspect a microstructure having a minute moving section by a simple method are provided. A probing card () has a speaker (), and a circuit substrate () which fixes a probe (), and the speaker () is disposed on the circuit substrate (). The circuit substrate () is provided with an aperture region. As the speaker () is disposed on that region, a test sound wave is output to the moving section of the microstructure. The probe () detects a change in an electrical characteristic caused by the motion of the moving section according to the test sound wave, thereby inspecting the characteristic of the microstructure.

Probing card and inspection apparatus for microstructure

An electrostatic capacitance detection circuitcomprises an AC voltage generator, a first operational amplifierof which non-inverting input terminal is connected to specific potential (a ground in this example), a second operational amplifierthat includes a voltage follower, a resistance (R)connected between the AC voltage generatorand an inverting input terminal of the first operational amplifier, a resistance (R)connected between the inverting input terminal of the first operational amplifierand an output terminal of the second operational amplifier, and an impedance element (a capacitor)connected between an output terminal of the first operational amplifierand a non-inverting input terminal of the second operational amplifier, and a capacitor to be detectedis connected between the non-inverting input terminal of the second operational amplifierand specific potential. The electrostatic capacitance detection circuitand the capacitorare located adjacently.

Electrostatic capacitance detection circuit and microphone device

An electrostatic capacitance detection circuitcomprises an AC voltage generatoran operational amplifierof which non-inverting input terminal is connected to specific potential (a ground in this example), an impedance convertera resistance (R)connected between the AC voltage generatorand an inverting input terminal of the operational amplifiera resistance (R)connected between the inverting input terminal of the operational amplifierand an output terminal of the impedance converterand an impedance element (a capacitor)connected between an output terminal of the operational amplifierand an input terminal of the impedance converterA capacitor to be detectedis connected between the input terminal of the impedance converterand the specific potential.

Impedance measuring circuit and capacitance measuring circuit

An electrostatic capacitance detection circuitcomprises an AC voltage generator, an operational amplifierof which non-inverting input terminal is connected to specific potential (a ground in this example), an impedance converter, a resistance (R)connected between the AC voltage generatorand an inverting input terminal of the operational amplifier, a resistance (R)connected between the inverting input terminal of the operational amplifierand an output terminal of the impedance converter, and an impedance element (a capacitor)connected between an output terminal of the operational amplifierand an input terminal of the impedance converter, and a capacitor to be detectedis connected between the input terminal of the impedance converterand specific potential. The electrostatic capacitance detection circuitand the capacitorare located adjacently.

An electrostatic capacitance detection circuitcomprises a DC voltage generator, an operational amplifierof which non-inverting input terminal is connected to specific potential, an impedance converter, a resistance (R)connected between the DC voltage generatorand an inverting input terminal of the operational amplifier, a resistance (R)connected between the inverting input terminal of the operational amplifierand an output terminal of the impedance converter, and a capacitorconnected between an output terminal of the operational amplifierand an input terminal of the impedance converter. A capacitor to be detectedis connected between the input terminal of the impedance converterand specific potential.

Circuit and method for impedance detection

A microstructure includes a mass; a base member in which the mass is movably contained. The mass includes a surface, which is exposed out of the base member, and a stopper wire, which is arranged above the surface of the mass so as to inhibit over move of the mass.

Microstructure with movable mass

A vibration wave detector having a first diaphragm for receiving vibration waves, such as sound waves and so on, to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a second diaphragm positioned on the opposite side of the first diaphragm with respect to the retaining rod, and a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the first diaphragm and propagated to the resonant unit through the retaining rod.

Vibration wave detector

A vibration wave detector in which: a plurality of resonator beams, each having a different length and being allowed to resonate at a specific frequency, are provided; a piezoresistor is installed in each resonator beam; and the piezoresistors are parallel-connected so that vibration is converted to an electric signal by the piezoresistors so as to output the sum of vibration waveforms at the respective resonator beams. Utilizing the fact that the magnitude of strain is different depending on positions on the resonator beam, the installation position of the piezoresistor is adjusted on each of the resonator beams so as to set the level of an output signal from each frequency band at a desired level; thus, it becomes possible to control the gain of a specific frequency band.

Growing community of inventors

Amagasaki, Japan

Naoki Ikeuchi