Mitsubishi Electric Corporation

Konica Minolta, Inc.

Sumco Corporation

Yahoo Japan Corporation

Naoki Ikeda

Shuhei Yokoyama

Shogo Shibata

Hisashi Kawafuji

Maki Hasegawa

Hisashi Oda

Kazuki Koda

Toshiaki Ono

Yoshinori Takahashi

Yasuo Koike

Tomoya Okazaki

Keitaro Ichikawa

Tomokazu Katano

Naoto Yamaguchi

Nozomu Tanaka

Yosuke Arai

Yuki Taki

An analysis system includes: a terminal that comprises a terminal controller; and a server that comprises a server controller and a communication interface, the terminal controller acquiring original data, converting the original data into a plurality of pieces of small data each having a size smaller than a size of each piece of the original data and into certainty factors of respective pieces of the small data, and transmitting the small data to the server, and the server controller receiving the small data from the terminal via the communication interface, executing analysis using the small data, and outputting an analysis result of the analysis.

Analysis system and control method for analysis system

A semiconductor device includes: semiconductor elements; a package sealing the semiconductor elements and being rectangular in a top view; control terminals protruding from a first side of the package; output terminals protruding from a second side facing the first side of the package; and a recessed portion formed in a third side adjacent to the first side and the second side of the package, wherein a part of the control terminals is disposed at end portions of lead frames, the semiconductor device further includes dummy terminals disposed at other end portions of the lead frames, respectively, the dummy terminals protruding from the recessed portion, and an amount of the protrusion of each of the dummy terminals from the recessed portion is smaller than or equal to 0.75 mm.

Semiconductor device

A semiconductor device includes: a semiconductor element; a mold member covering the semiconductor element; and a first terminal and a second terminal electrically connected to the semiconductor element, protruding from one side of the mold member, and alternating along the one side. The first terminal includes a first bend, and the second terminal includes: a second bend located further from the one side of the mold member than the first bend, and having the same width as the first bend in plan view.

Semiconductor device with bent terminals

The plurality of control terminals are drawn out from the first side surface of the sealing resin. The plurality of main terminals are drawn out from the second side surface of the sealing resin. Each of the main terminals includes, in the sealing resin, a bonding section wire-connected to one of the semiconductor chips, a heat transfer section adjacent to the bonding section, and a mounting section on which the other one of the semiconductor chips is mounted. A concave section is provided on the second side surface between the main terminals adjacent to each other. A side surface of the heat transfer section is opposed to the concave section. A side surface of the bonding section is not opposed to the concave section.

Semiconductor device and power conversion device

A drive circuit includes a second drive circuit that drives a semiconductor switching element in a case where a pulse width of a corresponding signal is determined to be larger than a second threshold, and a timing adjustment circuit that adjusts a timing at which the second drive circuit cooperates with a first drive circuit to drive the semiconductor switching element during a turn-off period of the semiconductor switching element due to drive of the first drive circuit.

Drive circuit and semiconductor device

A posture estimation device includes: a processor that: obtains detected information indicating a feature of a subject, wherein the feature is detected based on an image that is captured by an imager from a position where the subject is viewed from above, calculates a feature amount based on the obtained detected information, updates, based on a geometric relationship between the imager and the subject, a model parameter for estimating a posture of the subject by machine learning using the calculated feature amount in a time series, and estimates the posture of the subject using the updated model parameter.

Posture estimation device, behavior estimation device, storage medium storing posture estimation program, and posture estimation method

A terminal device according to the present invention includes an application and a browser. The application includes a providing unit that provides the browser that is instructed by the application to perform a predetermined process with terminal information that is used to identify a terminal device and that is acquired by the application. The browser includes a sending unit that sends terminal information that is provided by the providing unit in the application and cookie information that is associated with a predetermined server device to the predetermined server device.

Terminal device identification systems, methods, and programs

A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.

Method for manufacturing power module

Power module and control integrated circuit

A method for manufacturing an epitaxial wafer includes: a step of pulling a single crystal from a boron-doped silicon melt in a chamber based on a Czochralski process; and a step of forming an epitaxial layer on a surface of a silicon wafer sliced from the single crystal. The single crystal is allowed to grow while passed through a temperature region of 800 to 600&#xb0; C. in the chamber in 250 to 180 minutes during the pulling step. The grown single crystal has an oxygen concentration of 10&#xd7;10to 12&#xd7;10atoms/cmand a resistivity of 0.03 to 0.01 &#x3a9;cm. The silicon wafer is subjected to pre-annealing prior to the step of forming the epitaxial layer on the surface of the silicon wafer, for 10 minutes to 4 hours at a predetermined temperature within a temperature region of 650 to 900&#xb0; C. in an inert gas atmosphere. The method is to fabricate an epitaxial wafer that has a diameter of 300 mm or more, and that attains a high IG effect, and involves few epitaxial defects.

Growing community of inventors

Tokyo, Japan

Naoki Ikeda