Kabushiki Kaisha Toshiba

National Institute for Materials Science

Yamato Scientific Co., Ltd.

Ikeda Glass Co., Ltd

Naoki Ikeda

Hideki Shibata

Kei Kaneko

Toshihide Nabatame

Rei Hashimoto

Tsutomu Kakuno

Fumitomo Matsuoka

Mariko Takagi

Kaoru Hama

Ichiro Yoshii

Hiroaki Yasuda

Toyohiro Chikyo

Jin Kawakita

Akihiko Ohi

Tomoko Ohki

Kazuaki Sakoda

Yoshimasa Sugimoto

Shinji Saito

Takashi Kuroda

Yuanzhao Yao

Takaaki Mano

The present invention is to provide a small-sized dryness/wetness responsive sensor that detects a galvanic current with a high sensitivity as a principle of operation. According to one embodiment of the present invention, a dryness/wetness responsive sensor comprises a thin wire made of a first metal and a thin wire made of a second metal, the second metal is different from the first metal, the thin wire of the first metal and the thin wire of the second metal are disposed in juxtaposition with each other on an insulating substrate, and a surface state of a part between the thin wire of the first metal and the thin wire of the second metal is hydrophilic or hydrophobic.

Dryness/wetness responsive sensor

A rotary evaporator of the present invention has an insertion area of a rotary joint 33 in a straight shape. This area is movably inserted to a motor rotor 27 of a motor by a sleeve 31 or 31' in an axial direction. Bushes 57 are inserted between the rotary joint 33 and the sleeve 31 or 31' for integrating the rotary joint 33 and the sleeve 31 or 31' by a fastening force generated by a fastening cap 61 or 61' engaged with a screw section of the sleeve 31 or 31'. With the above-described structure, when the outer peripheral surface of the rotary joint 33 is abraded by a sealing member 43, the fastening cap 61 is loosened and the rotary joint 33 is slightly moved to the axial direction so that the rotary joint 33 is moved to an appropriate or an optimum position along the axial direction. On the other hand, when a sample container is small, the fastening cap 61 or 61' is loosened and the rotary joint 33 is moved to the axial direction so that the rotary joint 33 is moved to an appropriate or an optimum position along the axial direction. Thereafter, the fastening cap 61 or 61' is fastened again.

Rotary evaporator

A semi conductor device is provided having the following arrangement. A first electrode is formed on the major surface of a semiconductor substrate and comprises a first Al connection layer formed over the semiconductor substrate and a barrier metal layer provided on, and electrically connected to, the first Al connection layer and serving as a barrier against the Al. An insulating film is formed over the semiconductor substrate so as to cover the first electrode. An opening is formed in the insulating film so as to partially expose the first electrode. An antifuse film is formed in a manner to partially cover the insulating film and contact with the barrier metal layer of the first electrode with the opening therebetween. The antifuse film is formed of silicon nitride whose nitrogen/silicon atomic composition ratio ranges from 0.6 to 1.2. A second electrode is formed over the antifuse film and comprised of a barrier metal layer serving as a barrier against the Al.

Semiconductor device equipped with antifuse elements and a method for

A semiconductor device is provided having the following arrangement. A first electrode is formed on the major surface of a semiconductor substrate and comprises a first Al connection layer formed over the semiconductor substrate and a barrier metal layer provided on, and electrically connected to, the first Al connection layer and serving as a barrier against the Al. An insulating film is formed over the semiconductor substrate so as to cover the first electrode. An opening is formed in the insulating film so as to partially expose the first electrode. An antifuse film is formed in a manner to partially cover the insulating film and contact with the barrier metal layer of the first electrode with the opening therebetween. The antifuse film is formed of silicon nitride whose nitrogen/silicon atomic composition ratio ranges from 0.6 to 1.2. A second electrode is formed over the antifuse film and comprised of a barrier metal layer serving as a barrier against the Al.

An amorphous silicon layer is formed on the side wall of a first wiring layer having a predetermined wiring width and formed in a predetermined shape by patterning. A silicon oxide layer is covering the first wiring layer and the amorphous silicon layer, and a through-hole is formed in the silicon oxide layer so that a portion of the first wiring layer is exposed. A tungsten layer is filling the through-hole, and a second wiring layer connected to the tungsten layer is formed on the silicon oxide layer.

Method of making a semiconductor device with sidewall etch stopper and

An amorphous silicon layer is used as an etch stop and is formed on the side wall of a first wiring layer having a predetermined wiring width and formed in a predetermined shape by patterning. A silicon oxide layer is covering the first wiring layer and the amorphous silicon layer, and a through-hole is formed in the silicon oxide layer so that a portion of the first wiring layer is exposed. The width of the through-hole is equal to or larger than the wiring width of the first wiring layer. A tungsten layer is filling the through-hole, and a second wiring layer connected to the tungsten layer is formed on the silicon oxide layer.

A contact hole in a diffusion region is narrowed by a buffer layer formed at about the middle of an interlayer insulating film in its thickness direction. This buffer layer serves as effective alignment tolerances to the diffusion region and a contact electrode at the time of forming the contact hole. The structure having a wiring conductor filled in the contact hole and having the contact electrode formed on this wiring conductor can assure a highly reliable contact. Forming a buffer layer as a sidewall on this contact electrode and a first wiring layer formed on the same layer can assure an effective alignment tolerance to the first wiring layer at the time of forming a via hole. Filling a wiring conductor in the via hole can eliminate the need for any contact tolerance for a second wiring layer to be formed on this wiring conductor. Accordingly, the individual contact tolerances can be assured by self-alignment.

Method of fabricating a semiconductor device having miniaturized contact

A contact hole in a diffusion region is narrowed by a buffer layer formed at about the middle of an interlayer insulating film in its thickness direction. This buffer layer serves as effective alignment tolerances to the diffusion region and a contact electrode at the time of forming the contact hole. The structure having a wiring conductor filled in the contact hole and having the contact electrode formed on this wiring conductor can assure a highly reliable contact. Forming a buffer layer as a sidewall on this contact electrode and a first wiring layer formed on the same layer can assure an effective alignment tolerance to the first wiring layer at the time of forming a VIA hole. Filling a wiring conductor in the VIA hole can eliminate the need for any contact tolerance for a second wiring layer to be formed on this wiring conductor. Accordingly, the individual contact tolerances can be assured by self-alignment.

Growing community of inventors

Yokohama, Japan

Naoki Ikeda