Kabushiki Kaisha Toshiba

Naoki Hosoya

Shin-ichi Imai

A charge transfer device includes a source barrier electrode arranged on portion of an insulation film which lies between a source region and a signal input electrode over a semiconductor substrate and formed to isolate the source region from the signal input electrode, and a source storing electrode for storing substantial source charge. A pulse signal is supplied to the source barrier electrode and source storing electrode, and a D.C. source voltage is applied to the source region.

Input circuit of charge transfer device

This device comprises transfer electrodes and read electrodes. The read electrode operates in accordance with two modes. Where it operates based on the charge detection mode, a charge below the read electrode is read out in accordance with the floating gate system, so that a charge detection signal is produced. On the other hand, where it operates based on the charge transfer mode, the read electrode performs a function equivalent to the transfer electrode. This device further comprises selector means, thus permitting the read electrode to select either of two modes to operate in a selected mode.

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Yokohama, Japan

Naoki Hosoya