Semiconductor Energy Laboratory Co., Ltd.

Ricoh Company, Ltd.

Naoki Hirose

Shigenori Hayashi

Toru Takayama

Shunpei Yamazaki

Takashi Inujima

Noriya Ishida

Kazuo Urata

Mari Sasaki

Takashi Inushima

Shinji Imatou

Itaru Koyama

Mitsunori Tsuchiya

Masakazu Odaka

Kenji Itoh

Masaya Kadono

Kouhei Wada

Junichi Takeyama

Mamoru Tashiro

Kazuhisa Nakashita

Shunepi Yamazaki

Atsushi Kawano

Seiichi Odaka

Kenji Ito

Yasuyuki Arai

Toshiji Hamatani

Mitsunori Sakama

Takeshi Fukada

Narihito Kojima

Hiroshi Nagame

Mitsuru Seto

Shinji Imato

Takashi Inuzima

Yuji Tanamura

Takashi Inugima

A film comprising an i-carbon is formed by converting a reactive gas containing a carbon compound gas into plasma by a resonance using a microwave and a magnetic field.

Method for forming I-carbon film

An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Electronic device and its manufacturing method

A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.

Microwave enhanced CVD method and apparatus

An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.

CVD apparatus

A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.

Plasma processing apparatus and method

A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.

Electronic device including a densified region

Method of forming a film on a substrate

Method for forming a multi-layer planarization structure

A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

Apparatus for microwave processing in a magnetic field

A method of manufacturing an electronic device using boron nitrides comprises the steps of adding impurities in boron nitrides by ion implantation to form a doped region and directing a laser beam onto the doped region while the boron nitrides are placed in a vacuum or a non-oxidizing atmosphere.

Method for manufacturing an electronic device

Growing community of inventors

Atsugi, Japan

Naoki Hirose