Dainichiseika Color & Chemicals Mfg. Co., Ltd.

Other

Shinshu University

Mitsubishi Heavy Industries Compressor Corporation

Menicon Co., Ltd.

Nakayama, Ken-ichi

Naoki Hirata

Naomi Oguma

Junji Kido

Ken-ichi Nakayama

Musubu Ichikawa

Yong-Jin Pu

Satoru Yoshida

Michiei Nakamura

Toyoaki Yasui

Tsuyoshi Watanabe

Yuya Konno

Hisao Okamoto

Yuji Goto

Hiroaki Saikatsu

Hisao Kono

Hikaru Kurosaki

Noriyuki Okada

Yoshiyuki Zama

Toru Yoshimune

Akira Hayashi

Ryo Matsushita

Akinori Tasaki

Yohei Hashimoto

Ryotaro Akiba

Hyeon-Gu Jeon

Fumito Suzuki

Tetsuya Yanagimoto

Hiroaki Yamada

Masahiro Tsuchiya

Kenji Itagaki

Ken-Ichi Nakayama

A compressor includes a cylindrical casing, a bundle which includes a tubular stationary member and a rotor accommodated into the tubular stationary member, the bundle being configured to be inserted into an inner portion of the casing, and a roller configured to roll on an inner circumferential surface of the casing while supporting the bundle when the bundle is inserted into the inner portion of the casing along an axial direction. An outer circumferential surface of the roller is a continuous convex curved surface defined such that a curvature radius of an end side curved surface portion along a rotating shaft of the roller is smaller than a curvature radius of a center curved surface portion.

Compressor

The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

Transistor element

Provided are a fine-particulate organic semiconductor material, a thin organic semiconductor film and an organic transistor. The fine-particulate organic semiconductor material is in a form of fine particles and is usable as an organic semiconductor material. The fine particles are fine thermotropic liquid crystal particles that undergo a phase transition into a liquid crystal state when heated to a temperature of from 50&#xb0; C. to 350&#xb0; C. The fine-particulate organic semiconductor material can easily and uniformly form the thin organic semiconductor film over a large area by a film printing process or a dispersion coating process. The thin organic semiconductor film has high electron mobility and high ON/OFF value.

Organic semiconductor particulate material, organic semiconductor thin-film, dispersion liquid for forming organic semiconductor film, method for producing organic semiconductor thin-film, and organic thin-film transistor

Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): In the formula (1), Rmeans a linear or branched alkyl group having from 1 to 20 carbon atoms, Rmeans a linear or branched alkyl group having from 2 to 6 carbon atoms, Rmeans a linear or branched alkyl group having from 2 to 6 carbon atoms, Xand Xeach mean a heteroatom selected from an oxygen atom, sulfur atom or selenium atom, Y means a halogen atom or cyano group, m stands for a number of from 0 to 4, and n stands for a number of from 0 to 2. Further, the alkyl groups represented by Rand Rmay each be substituted with one or more fluorine atoms.

Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor

A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.

Current-amplifying transistor device and current-amplifying, light-emitting transistor device

An organic semiconductor material is represented by the following formula (F): wherein A represents a cyclic conjugated skeleton structure formed of one or more aromatic rings, and Rand Reach independently represent a substituted or unsubstituted alkyl group. The organic semiconductor material has high electron mobility and high on/off ratio, and can form an organic semiconductor thin film by a solution process making use of its solution. 

Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor

This present invention can provide a novel pigment useful in color image displays to form blue pixels capable of providing high-level brightness and saturation, especially a finely-divided pigment which has bright hue and is excellent in pigment physical properties such as light fastness, solvent resistance and heat resistance, and a process for producing the same, a pigment dispersion making use of the pigment, and an ink for a color filters. The novel pigment is produced by forming into a pigment a subphthalocyanine represented by the following formula (1): wherein X is a halogen atom, presents diffraction peaks at diffraction angles (2&#x3b8;) 7.0&#xb0;, 12.3&#xb0;, 20.4&#xb0; and 23.4&#xb0; in x-ray diffraction, and has an average particle size of 120 to 20 nm.

Pigment

Growing community of inventors

Tokyo, Japan

Naoki Hirata