Sony Corporation

Other

Sony Semiconductor Solutions Corporation

Naoki Hirao

Katsuhiro Tomoda

Izuho Hatada

Masato Doi

Toyoharu Oohata

Hiroyuki Okuyama

Goshi Biwa

Toshihiko Watanabe

Huy Sam

Yasunobu Iwakoshi

Yuya Miura

Hiroyuki Hosono

A photo-emission semiconductor device superior in reliability is provided. The photo-emission semiconductor device includes a semiconductor layer, a light reflection layer provided on the semiconductor layer, and a protective layer formed by electroless plating to cover the light reflection layer. Therefore, even if the whole structure is reduced in size, the protective layer reliably covers the light reflection layer without gap.

Photo-emission semiconductor device and method of manufacturing same

A light emitting apparatus including: one or a plurality of light emitting devices each having a plurality of electrodes and each emitting light from the upper surface of the light emitting device; a plurality of terminal electrodes provided on the lower side of the light emitting devices in a positional relation with the light emitting devices and electrically connected to the electrodes of the light emitting devices; a first metal line brought into contact with the upper surfaces of the light emitting devices and one of the terminal electrodes, provided at a location separated away from side surfaces of the light emitting devices and created in a film creation process; and an insulator in which the light emitting devices and the first metal line are embedded.

Light emitting apparatus, illumination apparatus and display apparatus

A method of manufacturing an electronic device includes: in transferring one or a plurality of element sections onto a first substrate from a second substrate, forming part or all of the one or the plurality of element sections on the second substrate with a resin layer in between; peeling off the one or the plurality of element sections that are formed on the second substrate from the second substrate through laser irradiation performed on the resin layer, and disposing, onto the first substrate, the one or the plurality of element sections peeled off; and using, as the resin layer, resin having glass-transition temperature and thermal decomposition temperature that differ from each other by 150 degrees centigrade or less.

Electronic device and method of manufacturing electronic device

A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being, provided avoiding a neighborhood of an end of the functional element among, opposed side sections of the first and second seed metals.

Electronic device mounted on a substrate

A light-emission element assembly includes: a light-emission element; a mold section in which the light-emission element is molded; a pad section protruding from an undersurface of the mold section, and electrically connected to the light-emission element; and a reinforcement section provided in the pad section, and projecting towards a side on which the mold section is provided.

Light-emission element assembly and method of manufacturing same, as well as display

A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being provided avoiding a neighborhood of an end of the functional element among opposed side sections of the first and second seed metals.

Disclosed herein is a light emitting apparatus including: one or a plurality of light emitting devices each having a plurality of electrodes and each emitting light from the upper surface of the light emitting device; a plurality of terminal electrodes provided on the lower side of the light emitting devices in a positional relation with the light emitting devices and electrically connected to the electrodes of the light emitting devices; a first metal line brought into contact with the upper surfaces of the light emitting devices and one of the terminal electrodes, provided at a location separated away from side surfaces of the light emitting devices and created in a film creation process; and an insulator in which the light emitting devices and the first metal line are embedded.

A light emitting device includes: one or plural light emitting elements having plural electrodes; a chip-like insulator surrounding the one or plural light emitting elements from a side surface side of the one or plural light emitting elements; and plural terminal electrodes electrically connected one-to-one with the plural electrodes, and having protrusions each protruding from a peripheral edge of the chip-like insulator.

Light emitting device, illuminating device, and display device

A light emitting unit including plural kinds of light emitting elements with different light emitting wavelengths, wherein, among the light emitting elements, at least one kind of light emitting element includes a semiconductor layer configured by laminating a first conductive layer, an active layer and a second conductive layer and having a side surface exposed by the first conductive layer, the active layer and the second conductive layer; a first electrode electrically connected to the first conductive layer; a second electrode electrically connected to the second conductive layer; a first insulation layer contacting at least an exposed surface of the active layer in the surface of the semiconductor layer; and a metal layer contacting at least a surface, which is opposite to the exposed surface of the active layer, in the surface of the first insulation layer, and electrically separated from the first electrode and the second electrode.

Light emitting unit and display device

A manufacturing method of a display device, includes: a first step of collectively transferring light-emitting elements arranged at every specified number of light-emitting elements formed and arranged on a first substrate to a transfer area set on a second substrate; and a second step of transferring light-emitting elements remaining on the first substrate to between the plural light-emitting elements mounted on the second substrate in at least one of a state where the first substrate is moved with respect to the transfer area on the second substrate and a state where the first substrate is rotated in a plane.

Manufacturing method of display device and display device

A semiconductor light emitting device includes a light emitting portion, and an electrode formed on the light emitting portion. The electrode includes: a light reflecting layer configured to reflect light emitted from the light emitting portion and including a first metal; a first seed layer formed directly on the light reflecting layer and including a second metal; a second seed layer coating at least side surfaces of the light reflecting layer and the first seed layer, the second seed layer including a third metal; and a plating layer coating at least top and side surfaces of the second seed layer, the plating layer including a fourth metal.

Semiconductor light emitting device and method for manufacturing the same

A method of manufacturing a semiconductor device including a nitride semiconductor layer having high-precision thickness is provided. The method includes steps of: forming a gallium nitride (GaN) layer whose main face is a +c face on a substrate; forming a trench by selectively etching down a partial region in the +c face of the GaN layer; forming a metal layer so as to bury the trench; and separating the substrate and the GaN layer, after that, polishing a &#x2212;c face of the GaN layer until the metal layer is exposed, and removing a part in a thickness direction of the GaN layer.

Method of manufacturing semiconductor device

A method of electrically connecting an element to wiring includes the steps of forming a conductive fixing member precursor layer at least on wiring provided on a base; and arranging an element having a connecting portion on the wiring such that the connecting portion contacts the conductive fixing member precursor layer, and then heating the conductive fixing member precursor layer to form a conductive fixing member latter, thereby fixing the connecting portion of the element to the wiring, with the conductive fixing member layer therebetween, wherein the conductive fixing member precursor layer is composed of a solution-tape conductive material.

Growing community of inventors

Kanagawa, Japan

Naoki Hirao