Sicoxs Corporation

Hoya Corporation

Kabushiki Kaisha Toyota Jidoshokki

National Institute of Advanced Industrial Science and Technology

National Institute of Information and Communications Technology, Incorporated

Tamura Corporation

Naoki Hatta

Kuniaki Yagi

Takamitsu Kawahara

Motoki Kobayashi

Hiroyuki Nagasawa

Akiyuki Minami

Hidetsugu Uchida

Toyokazu Sakata

Ko Imaoka

Tomoatsu Makino

Shinya Watanabe

Kohei Sasaki

Hideki Takagi

Masataka Higashiwaki

Akito Kuramata

Yuuichi Kurashima

Keita Konishi

Mitsuharu Kato

A semiconductor substrate includes a single crystal GaO-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal GaO-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal GaO-based substrate.

Semiconductor substrate, semiconductor element and method for producing semiconductor substrate

A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

Semiconductor substrate and method for manufacturing semiconductor substrate

A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Manufacturing method for semiconductor substrate

There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.

Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate

A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface is formed on said single crystal substrate surface; each of the undulation ridges on said single crystal substrate surface has a height that undulates as each of the undulation ridges extends in the first direction; and the undulation ridges are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.

Process for producing silicon carbide single crystal

Growing community of inventors

Tokyo, Japan

Naoki Hatta