Kabushiki Kaisha Toshiba

Sony Semiconductor Solutions Corporation

Teijin Limited

Teijin Pharma Limited

Naoki Hase

Masanori Hosomi

Hiroyuki Ohmori

Yutaka Higo

Hiroyuki Uchida

Yo Sato

Hitoshi Iwasaki

Masayuki Takagishi

Shuichi Murakami

Susumu Hashimoto

Tadaomi Daibou

Yousuke Isowaki

Yushi Kato

Shumpei Omine

Junichi Ito

Masaki Kado

Kazuhiro Bessho

Naoki Tsuchiya

Susumu Takeuchi

Takumi Takeyasu

Takashi Tsuruo

Takao Yamori

Yuichi Ohsawa

Katsuhiko Koui

Masahiro Takashita

Yoshiyuki Matsumoto

Takao Ochiai

Takashi Kamimura

Masaichi Hasegawa

Katsushi Takahashi

A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

Magnetic storage element and electronic apparatus

Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.

Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element

The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.

Ferromagnetic tunnel junction element and method of manufacturing the same

To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.

Magnetic memory and magnetic memory recording method

There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell, the memory including first and second tunnel junction elements each having a laminated structure including a reference layer with a fixed magnetization direction, a recording layer with a reversible magnetization direction, and an insulating layer sandwiched between the reference layer and the recording layer, a first selection transistor electrically connected to first ends of the first and second tunnel junction elements, a first wire electrically connected to a second end of the first tunnel junction element, and a second wire electrically connected to a second end of the second tunnel junction element.

Magnetic memory, recording method of magnetic memory, and reading method of magnetic memory

To provide a magnetic storage element, a magnetic storage device, and an electronic device which store multi-value information with a simpler structure. A magnetic storage element provided with a plurality of tunnel junction elements each of which includes a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer, the plurality of tunnel junction elements electrically connected to each other in parallel, in which the plurality of tunnel junction elements has film configurations identical to each other, respective layers of the film configurations formed by using a same material to have a same thickness, and each of cross-sectional shapes obtained by cutting the plurality of tunnel junction elements in a laminating direction is a polygonal shape including upper and lower sides parallel to each other with a ratio of the lower side to the upper side different for each of the plurality of tunnel junction elements.

Magnetic storage element, magnetic storage device, electronic device, and method of manufacturing magnetic storage element

To provide a magnetic memory for storing multi-level information capable of reading while sufficiently securing a read margin. Provided is a magnetic memory including: first and second magnetic storage elements that are provided between a first wiring and a second wiring crossing each other, and are electrically connected in series; a third wiring electrically connected between the first and second magnetic storage elements; a first determination unit that determines a magnetization state of the first magnetic storage element on the basis of a current flowing to the first magnetic storage element through the third wiring; and a second determination unit that determines a magnetization state of the second magnetic storage element on the basis of a current flowing to the first and second magnetic storage elements through the first wiring, in which the determination state of the second determination unit is changed on the basis of the determination result of the first determination unit.

Magnetic memory, semiconductor device, electronic device, and method of reading magnetic memory

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Magnetoresistive element and magnetic memory

A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lRhR)(TMZ)(0&#x3c;x&#x3c;1, 0&#x2264;y&#x2264;0.6, 0.13&#x2264;z&#x2264;0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.

A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.

According to one embodiment, a magnetoresistive effect element includes: a nonmagnetic layer; a stacked structure body; and a detection layer. The stacked structure body is provided on the nonmagnetic layer. The stacked structure body includes: a reference layer; an oscillation layer; and an intermediate layer. The reference layer is provided on the nonmagnetic layer. A magnetization of the reference layer is fixed. The oscillation layer is provided on the reference layer. A magnetization of the oscillation layer is substantially parallel to the magnetization of the reference layer and is variable. The intermediate layer is provided between the reference layer and the oscillation layer. The detection layer is provided on the nonmagnetic layer apart from the stacked structure body.

Magnetoresistive effect element with an oscillation layer

A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AB(65 at %&#x2266;x&#x2266;85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

Magnetoresistive element including a changing composition as distance increases away from an intermediate film, and magnetic head with the same

A magnetic head includes a main magnetic pole, a trailing shield that forms a magnetic circuit with the main magnetic pole, a spin torque oscillator that is provided between the main magnetic pole and the trailing shield, a first cooling layer that partially has a Heusler structure, and a second cooling layer that is provided on the first cooling layer and mainly comprised of silver. The first cooling layer and the second cooling layer are provided either between the main magnetic pole and spin torque oscillator or between the trailing shield and the spin torque oscillator, with either of the two cooling layers being disposed closer to the spin torque oscillator. A third cooling layer may be formed to be in contact with the first cooling layer.

Growing community of inventors

Tokyo, Japan

Naoki Hase