Hitachi, Ltd.

Other

Teikoku Tsushin Kogyo Co., Ltd.

Nsk Corporation

Naoki Fukuda

Satoru Yamada

Hideo Aoki

Isamu Asano

Yoshitaka Nakamura

Tsuyoshi Tamaru

Hidekazu Goto

Keizo Kawakita

Masayoshi Hirasawa

Hiroshi Sakuma

Katsuhiko Tanaka

Masayuki Suzuki

Yoshitaka Tadaki

Toshihiro Sekiguchi

Takuya Fukuda

Masayoshi Saito

Nobuyoshi Kobayashi

Tadashi Umezawa

Keizou Kawakita

Takashi Ogawa

Hiroshi Ishiguro

Toshihisa Ohata

Shinichi Suzuki

Shinji Mizuno

Kozo Morita

Takashi Shinoki

Fusasuke Gotoh

Takayuki Yatabe

Kenji Takei

Hisato Yamamoto

Daisuke Makino

Hiroyuki Wakiwaka

Masanori Tateishi

Kouzaburo Igari

Haruo Ito

Mitsuharu Ezawa

Koji Mitsui

Katsutoshi Yanoshita

Kazutaka Nakagome

Yoshikazu Ohira

An electronic component substrate (-) includes an insulating base () and a flexible circuit board () mounted on the insulating base (). The flexible circuit board () is a synthetic resin film provided thereon with terminal patterns () and a conductor pattern () whose surface is slidingly contacted with a slider. The insulating base () is a synthetic resin molded piece. The flexible circuit board () is insert-molded to the insulating base (). The electronic component substrate (-) is produced by preparing the flexible circuit board () and first and second mold members () having a cavity (C) with a shape that corresponds to the external shape of the electronic component substrate (-). Then, the flexible circuit board () is accommodated in the cavity (C) between the first and second mold members (), and the cavity (C) is filled with a molten molding resin. After the molding resin has solidified, the first and second mold members () are removed.

Electronic parts board and method of producing the same

In a rolling bearing structured such that a plurality of rolling elements are respectively held between inner and outer rings by a retainer, grease is sealed in by a seal, a rotary body with the outer ring fitted therewith and a shaft with the inner ring fitted therewith can be connected together by a clutch mechanism and, when the rotary body and shaft are connected together by the clutch mechanism, the rolling bearing can be used on receiving a rotation load while the relative rotation between the inner and outer rings is zero, an initial radial clearance between the inner and outer rings is set such that a bearing effective clearance when the present rolling bearing is incorporated into between the rotary body and shaft can provide a positive value.

Rolling bearing

The semiconductor device is formed according to the following steps. A TiN filmand a W filmare deposited on a silicon oxide filmincluding the inside of a via-holeby the CVD method and thereafter, the W filmand TiN filmon the silicon oxide filmare etched back to leave only the inside of the via-holeand form a plug. Then, a TiN film, Al-alloy film, and Ti filmare deposited on the silicon oxide filmincluding the surface of the plugby the sputtering method and thereafter, the Ti film, Al-alloy film, and TiN filmare patterned to form second-layer wiringsand

Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element

Method for fabricating semiconductor integrated circuit

A semiconductor integrated circuit device and a manufacturing method therefor provide advantages that undulations are prevented from being produced in polycrystal silicon plugs in bit line contact holes and that the undesired phenomenon of transversally etching silicide film at contacts of the bit lines and the polycrystal silicon plugs is avoided. The bit lines formed when forming a first wiring layer are made of a laminate film having a titanium film, a titanium nitride film and a tungsten film, and a titanium silicide film containing nitrogen or oxygen is formed in contact areas of the bit lines and plugs. A titanium silicide film containing nitrogen or oxygen is also formed in contact areas of the first wiring layer and semiconductor substrate. The titanium silicide film may be replaced by silicide film containing nitrogen or oxygen, cobalt silicide film containing nitrogen or oxygen or cobalt silicide film.

Dynamic random access memory with improved contact arrangements

In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta O (tantalum oxide) film , the portions of bit lines BL and first-layer interconnect lines to of a peripheral circuit which are in contact with at least an underlying silicon oxide film are formed of a W film, the bit lines BL and the interconnect lines to being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines to and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.

Method of manufacturing a semiconductor integrated circuit device having a capacitor

The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

The semiconductor device is formed according to the following steps. A TiN film and a W film are deposited on a silicon oxide film including the inside of a via-hole by the CVD method and thereafter, the W film and TiN film on the silicon oxide film are etched back to leave only the inside of the via-hole and form a plug . Then, a TiN film , Al-alloy film , and Ti film are deposited on the silicon oxide film including the surface of the plug by the sputtering method and thereafter, the Ti film , Al-alloy film , and TiN film are patterned to form second-layer wirings and

In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta O (tantalum oxide) film the portions of bit lines BL and first-layer interconnect lines to of a peripheral circuit which are in contact with at least an underlying silicon oxide film are formed of a W film, the bit lines BL and the interconnect lines to being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines to and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.

Method of manufacturing semiconductor integrated circuit device having a capacitor

A semiconductor integrated circuit device and a method of manufacturing such a device provides the advantages that undulations are prevented from being produced in the polycrystal silicon plugs in the bit line contact holes and that the undesired phenomenon of transversally etching the silicide film at the contacts of the bit lines and the polycrystal silicon plugs is avoided. The bit lines BL formed at the time of forming a first wiring layer,is made of a laminate film having a titanium film,a titanium nitride film,and a tungsten film,and a titanium silicide film,containing nitrogen or oxygen is formed in the contact areas of the bit lines BL and the plugs,A titanium silicide film,containing nitrogen or oxygen is also formed in the contact areas of the first wiring layer,and the semiconductor substrate,The titanium silicide film,may be replaced by a tungsten silicide film containing nitrogen or oxygen, a cobalt silicide film containing nitrogen or oxygen or a cobalt silicide film.

Semiconductor integrated circuit device and method of manufacturing the same

A one-way clutch containing rolling bearing comprises a bearing part,and an OWC part,sharing an outer race,and an inner race,The bearing part,contains a plurality of balls,and the OWC part,contains sprags,and a ribbon spring,. The balls,and the sprags,are held by a single integral-type cage

One-way clutch containing rolling bearing

A vibration generator which is durable, provides strong thrust and is capable of being reduced in size, cost and weight includes a movable element (,) having a permanent magnet (,) attached thereto; a stationary element (,) having end faces (,), (,) which oppose, across prescribed gaps, respective ones of end faces (,), (,) of the movable element, with the stationary element being excited by passing a current through an attached coil (,) to form a magnetic path with the movable element; and resilient support members (,) for supporting the movable element so that the movable element can vibrate in a direction in which the stationary element is magnetized by the coil. One pole face of the permanent magnet is arranged to oppose the outer side of the coil, thereby forming a magnetic path in which magnetic flux that emerges from the pole face of the permanent magnet cuts across the outer peripheral side of the coil, penetrates the interior of the coil and then is guided in the direction of N and S poles of the coil. The end faces of the stationary element are excited to desired magnetic poles to thereby vibrate the movable element.

Vibration generator

In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta,O,(tantalum oxide) film,the portions of bit lines BL and first-layer interconnect lines,to,of a peripheral circuit which are in contact with at least an underlying silicon oxide film,are formed of a W film, the bit lines BL and the interconnect lines,to,being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines,to,and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.

Semiconductor integrated circuit device, and method of manufacturing the same

Semiconductor integrated circuit device in which a conductive film is

Growing community of inventors

Ome, Japan

Naoki Fukuda