Sony Corporation

Kuraray Co., Ltd.

Nippon Telegraph and Telephone Corporation

Toshiba Mitsubishi-Electric Industrial Systems Corporation

Ihi Corporation

Tohoku University

Tokyo University of Science Foundation

Yamaguchi University

Iwate University

Research Institute of Innovative Technology for the Earth

Sony Corportion

Kewpie Corporation

Kuraray Specialities Europe Gmbh

Naoki Fujiwara

Tetsujiro Kondo

Takahiro Nagano

Junichi Ishibashi

Seiji Wada

Takashi Sawao

Toru Miyake

Takeshi Kusudou

Atsushi Jikihara

Tsutomu Watanabe

Hisakazu Shiraki

Toshiaki Sato

Yasuhiro Suto

Shinsuke Matsuno

Kenji Takano

Hiroyuki Ishii

Masato Nakamae

Hiroyuki Uchida

Hiroyuki Uzawa

Keisuke Morikawa

Tomoo Mizukami

Takashi Nakamura

Hiroshi Yamazaki

Koichi Ishihara

Masahiro Suzuki

Hiroshi Okamoto

Takanori Isozaki

Masanori Kanemaru

Nobuhiro Kikuchi

Takahiko Shindo

Seiji Tanimoto

Yoshiyuki Iso

Kengo Horikoshi

Hitoshi Maruyama

Yasuo Shibata

Kazutoshi Terada

Yousuke Kumaki

Atsushi Murakami

Yusuke Amano

Eiichi Ikawa

Tomoyoshi Kataoka

Takuma Morita

Hiroshi Koizumi

Hideyuki Nosaka

Takashi Katayama

Yoshiaki Kisaka

Koichi Murata

Yoshiaki Nakamura

Masahito Tomizawa

Etsushi Yamazaki

Kei Watanabe

Seiji Okamoto

Toshio Ito

Shuji Tanaka

Munehiko Nagatani

Naoki Kobayashi

Hiroyuki Fukuyama

Takayuki Kobayashi

Takashi Saida

Masaki Kato

Shin Kamei

Paul S Bixel

Kazuhiko Tanaka

Takashi Yamada

Masao Kawamoto

Mitsuru Kato

Mitsuteru Yoshida

Hideaki Kobayashi

Hiroto Kawakami

Tatsuaki Ambo

Tomohiro Ono

Yuta Ueda

Masataka Nakazawa

Hideaki Matsuzaki

Takaharu Kawahara

Bernd Papenfuhs

Kazushige Yonenaga

Takeshi Nakano

Hitoshi Nakatsuka

Shinichi Komaba

Shigeru Kanazawa

Hiroaki Katsurai

Katsuji Ujita

Mikitaka Itoh

Akihiko Arimitsu

Toshihiro Itoh

Yoshiki Nobuto

Hiroyuki Ohgi

Shigeki Aisawa

Nobuhiro Koga

Naokiyo Inomata

Kimikazu Sano

Naoaki Yabuuchi

Masafumi Nogawa

Ken Yuki

Shigeki Takada

Meishin Chin

Shiko Nakamura

Mikio Yoneyama

Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.

Method for manufacturing optical semiconductor waveguide window structure

There is provided an information processing apparatus and an information processing method that can provide more useful information for an action plan of an autonomous mobile body, the information processing apparatus including an action recommendation unit configured to present a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation. The action recommendation unit determines the recommended action on the basis of an action history collected from a plurality of the autonomous mobile bodies, and on the basis of a situation summary received from a target autonomous mobile body that is a target of recommendation. The information processing method includes presenting, by a processor, a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation.

Information processing apparatus, information processing method, and program

A 1.3 μm-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

Tunable DBR semiconductor laser

A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere. By covering the cracks that occur in the insulation film in the production process with the insulation film made of SiO, SiN, SiONor the like, an organic solvent such as acetone or ethanol used in the process can be prevented from seeping in between the insulation film and the organic material through the cracks in the insulation film.

Semiconductor device

A photovoltaic power generation system includes a plurality of photovoltaic cell arrays, a plurality of power conditioners connected respectively with the plurality of photovoltaic cell arrays, and a high order device connected to the plurality of power conditioners. The high order device is configured to execute: a first output control to adjust output power of a designated power conditioner to a predetermined output power amount being set in advance; and a second output control to adjust output power from a remaining power conditioner which is other than the designated power conditioner among the plurality of power conditioners. The high order device is configured to execute characteristic-data acquisition to acquire an input/output electrical characteristic of the designated power conditioner during execution of the first output control.

Photovoltaic power generation system and photovoltaic power generation method

A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

Semiconductor integrated optics element and production method therefor

A packing has a plurality of sheet materials spaced and arranged in parallel, and liquid flows along the flat surface thereof in a standing use state. Each sheet material has at least one member group including a plurality of support members arranged such that the upper end of the uppermost support member corresponds to the upper end of the sheet material and the lower end of the lowermost support member corresponds to the lower end of the sheet material. Each support member has a pair of support walls parallel to the liquid flow direction and perpendicular to the sheet material surface, and a bridging part connecting the support walls. A sandwiching structure is formed that one sheet material is held by at least one support member attached thereto and at least one support member attached to an adjacent sheet material, and it extends linearly through the plurality of sheet materials.

Packing

The present invention relates to frozen liquid egg whites in which are admixed 0.01-0.4 parts of egg yolks for every 100 parts of egg whites, wherein 0.1-2 parts inclusive of &#x3b1;-cyclodextrin are added for every 100 parts of liquid egg whites, and the turbidity H1 (degrees) calculated by means of the belowmentioned formula (1) is 18 or more: H1=H2&#x2212;H3 . . . (1). Here, H2 indicates the turbidity (degrees) of the frozen liquid egg whites measured immediately after being defrosted, and H3 indicates the egg-derived turbidity y (degrees) calculated by means of the belowmentioned approximation formula (2): y=&#x2212;380.75x+272.42x+17.257 . . . (2). Here, x indicates the admixed amount (parts) of egg yolks for every 100 parts of liquid egg whites.

Frozen liquid egg whites, method for producing same, and liquid egg whites resulting from defrosting frozen liquid egg whites

A photovoltaic system includes photovoltaic cells, inverters, a reduced electricity output state determiner which determines whether each of the photovoltaic cells is in a reduced electricity output state, a first command value generator which generates a first command value for decreasing a first power factor of a first inverter determined as in the reduced electricity output state, a second command value generator which generates a second command value for increasing a second power factor of at least one of second inverters so as to compensate for output power of the first inverter, and a controller which controls the inverters.

Photovoltaic system

The present invention provides an optical transmitter and a light intensity monitoring method that provide reliable APC feedback for a semiconductor laser equipped with an SOA. The optical transmitter includes an SOA integrated EA-DFB having a DFB laser, an EA modulator connected to the DFB laser, and an SOA connected to the EA modulator. In the structure of the optical transmitter, a light detector part is disposed forward of the output end side of an SOA part. The light detector part changes part of an output light beam from the SOA part into an electric current and detects light, while guiding the remaining part of the output light beam to a waveguide. With the light detector part disposed forward for the SOA part, it is possible to feed back the output result from the SOA part. Hence, good APC is possible.

Optical transmitter and light intensity monitoring method

A photovoltaic system includes power generators configured to generate power utilizing sunlight, inverters configured to convert the power generated by the power generators into alternating-current power output to a power system, a first limiter configured to limit output power of the inverters not more than a predetermined capacity, a second limiter configured to limit output power of at least one of the inverters to a level exceeding the predetermined capacity limited by the first limiter, when a predetermined condition is satisfied, and an inverter controller configured to control the output power of the inverters, based on the first limiter or the second limiter.

A configuration of a DFB laser-based wavelength tunable laser is well known, but long resonators have difficulty in forming uniform resonators due to production variations, thereby inducing limitation in narrowing the spectral linewidth in the DFB laser-based wavelength tunable laser as well. In the semiconductor laser device of the present invention, a semiconductor laser that oscillates in a single mode and a low-loss lightwave circuit using SiOglass are arranged on the common substrate. The lightwave circuit is configured such that part of output light from the semiconductor laser propagates through a certain length of an optical path, and then is reflected by a reflector and is fed back to the semiconductor laser. Output light from the semiconductor laser and an input waveguide of the lightwave circuit can also be configured to be optically connected directly to each other. The present invention can provide a compact laser device with a narrowed spectral linewidth and stable wavelength controllability.

Semiconductor laser device

A composite material including a carbon-containing material and a non-stoichiometric titanium compound shown by a chemical formula of LiTiO, where x is in a range of 0&#x3c;x&#x3c;0.30, the composite material including at least one composite particle that has a core portion including the non-stoichiometric titanium compound and a mixed layer formed on a surface of the core portion, the mixed layer including non-stoichiometric titanium compound and carbon, and having an atomic ratio of titanium and carbon in a range of Ti/C=1/50 or more.

Non-stoichiometric titanium compound-carbon composite, method for producing same, negative electrode active material and lithium ion secondary battery

A method of manufacturing packing includes: determining types of a gas and a liquid which are brought into gas-liquid contact and a main plate to be used; calculating a relationship between a contact angle and a liquid film length ratio; determining the arrangement (intervals) of a rib; determining rib conditions; calculating the minimum value of the flow direction length of the rib satisfying the contact angle and a strength requirement; confirming whether or not a liquid film length is greater than the minimum value; and determining the flow direction length of the rib within a range from the minimum value to the liquid film length.

Method of manufacturing packing and packing

Growing community of inventors

Tokyo, Japan

Naoki Fujiwara