Nec Corporation

Naoki Banno

Munehiro Tada

Toshitsugu Sakamoto

Hiromitsu Hada

Hisao Kawaura

Noriyuki Iguchi

Koichiro Okamoto

Hiroshi Sunamura

Provided is a rectifying element that prevents erroneous writing and an erroneous operation and that is substituted for a select transistor; a rewritable semiconductor device that uses a nonvolatile switch including the rectifying element and having excellent reliability, a small area, and low power consumption has a stacked structure of a first electrode, a first buffer layer, a rectifying layer, a second buffer layer, and a second electrode; and the rectifying layercomprises a first silicon nitride layerhaving a high nitrogen content (50 atm % or more) and second silicon nitride layersA andB having a lower nitrogen content than the first silicon nitride layer(50 atm % or less), wherein the second silicon nitride layersA andB are in contact with the first and second buffer layers (), respectively, and the first silicon nitride layeris sandwiched between the second silicon nitride layersA andB.

Rectifying element and switching element having the rectifying element

Provided are: a semiconductor device in which a non-volatile switch provided with a rectifying element and a non-volatile element provided with no rectifying element are formed in the same wiring; and a method for producing the semiconductor device. The semiconductor device includes a first switching element and a second switching element disposed in a signal path of a logic circuit. The first switching element includes a rectifying element and a variable resistance element. The second switching element does not include the rectifying element but includes a variable resistance element. The first switching element and the second switching element are formed in the same wiring layer.

Semiconductor device and method for producing semiconductor device

A switch circuit includes: a plurality of four-terminal switches having variable-resistance elements and a rectifier element serially connected; an input line and an output line, at least one of which is multiply present, to which are connected terminals of two switches other than terminals at which the variable-resistance terminals are serially connected; and a control line to which are connected the terminals of the two switches other than the terminals at which the rectifier elements are serially connected, the control line, together with the input line and the output line, turning on and off in turn, by pair, the pair of variable-resistance elements connected to the input line and the pair of variable-resistance elements connected to the output line, among the variable-resistance elements of the plurality of four-terminal switches of the four-terminal switches connected to the input line or the output line.

Switch circuit, semiconductor device using same, and switching method

In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another.

Switching element having overlapped wiring connections and method for fabricating semiconductor switching device

A variable resistance element according to the present invention comprises a configuration in which an ion conduction layer is arranged between an upper electrode and a lower electrode, wherein a recess part is formed on a surface of the lower electrode of the variable resistance element, and the ion conduction layer is formed in contact with at least the recess part on a surface of the lower electrode.

Variable resistance element, semiconductor device, and manufacturing method of semiconductor device

In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at least copper; a second electrode that contains at least Ru, nitrogen and a first metal; and an ion conducting layer that is positioned between the first electrode and the second electrode.

Variable resistance element and method for producing variable resistance element

A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.

Semiconductor device and method of manufacturing the same

The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to the variable resistance layer of the non-volatile switching element, the electrode that does not feed metal ions to the variable resistance layer when the switch is in the ON state is made from a ruthenium alloy. The ruthenium alloy includes ruthenium and a metal in which the standard Gibbs energy of forming &#x394;G when metal ions are generated from the metal is higher in the negative direction than &#x394;G of ruthenium. As a result, it becomes possible to maintain the low-resistance state in the ON state for a longer period of time without increasing the amount of electrical current required when a switch is made between the ON state and the OFF state.

Switching element and method for manufacturing switching element

To provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, a switching element according to this invention includes a non-volatile resistive-change element, a rectifying element, and an insulating material. The non-volatile resistive-change element includes a first electrode, a second electrode, and a non-volatile resistive-change layer provided between the first electrode and the second electrode. The rectifying element includes the second electrode, a third electrode, and a volatile resistive-change layer provided between the second electrode and the third electrode. The insulating material is provided at least on the side surface of the third electrode.

Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method

A switching device includes a first electrode (), a second electrode (), and a complex oxide ion conducting layer () interposed between the first electrode () and the second electrode (). The complex oxide ion conducting layer () contains at least two oxides including a metal oxide. The first electrode () can supply electrons to the complex oxide ion conducting layer (). The second electrode () contains a metal and can supply ions of the metal to the complex oxide ion conducting layer ().

Switching device and method of manufacturing the same

A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layercapable of conducting metal ions, first electrodearranged in contact with the ion conductive layer, and second electrodefor supplying metal ions to the ion conductive layer, wherein an oxygen absorption layerwhich contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.

The switching element of the present invention is of a configuration that includes: an ion conduction layer () that includes an oxide, a first electrode () and a second electrode () that are provided in contact with the ion conduction layer () and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode () provided in contact with the ion conduction layer () and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.

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Tokyo, Japan

Naoki Banno