Nichia Corporation

Naoki Azuma

Masahiko Sano

Hisashi Kasai

Akiyoshi Kinouchi

Makoto Abe

Tomohiro Shimooka

Keisuke Higashitani

Daisuke Sanga

Takeshi Kususe

Kunihito Sugimoto

Tomonori Morizumi

Kazuki Kashimoto

Keisuke Sejiki

Masafumi Itasaka

Toshiaki Ogawa

A light-emitting element includes: a sapphire substrate having a c-plane at a main surface thereof; and a semiconductor layer provided at the main surface side of the sapphire substrate. The sapphire substrate includes a first unit including a first region, a second region, and a third region, wherein, when viewed from the main surface side, the three regions together have a shape of a regular hexagon that is evenly divided into the three regions such that each region has a shape of a rhombus; and a plurality of second units disposed to be aligned with each side of the first unit, the second unit having mirror symmetry relative to the first unit. The first unit and the second units are arranged to make a space at the center of the unit.

Light-emitting element comprising sapphire substrate with convex portions

A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of &#x2212;10&#xb0; to +10&#xb0; with respect to an a-plane of the sapphire substrate in the plan view.

Nitride semiconductor element and method for manufacturing the same

Light-emitting element comprising a partitioned sapphire substrate

A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.

Method of manufacturing light emitting element

Provided is a bandpass filter for a light emitting device that can improve the light emission efficiency in use for a light emitting device, and a light emitting device that can obtain the high light emission efficiency by using the bandpass filter. The light emitting device includes a substrate; a light emitting element disposed over the substrate; a phosphor-containing layer containing at least one kind of phosphor; and a bandpass filter disposed over a surface of the phosphor-containing layer on the light emitting element side, the bandpass filter including a multilayer film having a plurality of first and second dielectric layers, the second dielectric layer being disposed over the first dielectric layer. The bandpass filter has a transmittance of 60% or more for light having a light emission peak wavelength of the light emitting element at an incident angle of 0 to 85&#xb0;, and another transmittance of 40% or less for light having a light emission peak wavelength of at least one kind of phosphor at an incident angle of a Brewster's angle (&#x3b8;)+5&#xb0; (&#x3b8;+5&#xb0;) to 85&#xb0; of the bandpass filter.

Bandpass filter for use in light emitting device and light emitting device using the same

A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

Semiconductor light emitting device including metal reflecting layer

Growing community of inventors

Katsuura-gun, Japan

Naoki Azuma