Fujitsu Corporation

Naoki Awaji

Yoshihiko Imanaka

Toshio Manabe

Hideyuki Amada

Toshihisa Anazawa

Sachio Ido

Fumiaki Kumasaka

Shunji Kashiwagi

Satoshi Komiya

Yoshio Kikuchi

Seigen Ri

Kohta Yoshikawa

Nagisa Ohsako

Kyung-ho Park

A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.

Method for producing photochemical electrode

A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.

Method for generating photochemical electrode

A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A&#x3e;B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Method for producing a photoexcitation material

A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A&#x3e;B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Photoexcitation material

X-rays are irradiated to a sample to be measured including at least one layer of film formed on a substrate; an interference oscillation curve of the X-rays incident on the sample to be measured is measured; and a concentration of an element adhered on a surface of the sample to be measured and/or segregated in an interface of the film is measured. The interference oscillation curve is fitted to an analysis formula expressing an X-ray reflectance to thereby determining a density of a region of the sample to be measured, where the element is adhered or is segregated, and a concentration of the element is computed based on the density.

Element concentration measuring method and apparatus, and semiconductor

A film thickness measuring method comprises the steps of measuring reflectances of X-rays on a film, extracting interference oscillations from the measured X-ray reflectances, and Fourier transforming the interference oscillations to compute a film thickness of the film, an average reflectance being given by fitting the measured X-ray reflectances to an analysis formula including a term of a product of a power function of an incident angle, which expresses attenuation of reflectances on a smooth surface of the film and an exponent function which expresses influence of roughness of the surface of the film, and a constant term expressing a background added to the product; the interference oscillations being given by using the measured X-ray reflectances and the average reflectance. The film thickness measuring method can extract interference oscillations of a reflectance curve by a method including arbitrariness and by a simple procedure.

Film thickness measuring and film forming method

A method of producing a high temperature superconductor Josephson element for an electronic device or a photodetector comprising the steps of: forming a lower ceramic superconductor film on a substrate; forming an upper ceramic superconductor of a different system ceramic from that of the lower ceramic superconductor film on a portion of the lower ceramic superconductor and on the substrate; and forming an insulating layer (tunnel barrier) between the lower and upper ceramic superconductor films by an interdiffusion therebetween.

Method of producing high temperature superconductor Josephson element

A method for fabricating a superconductive film composed of a RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x compound, or a (Bi.Sr.Ca.Cu.O) compound. In a first embodiment, oxides or carbonates of the component materials, namely Y.sub.2 O.sub.3, BaCO.sub.3, and CuO are mixed in atomic ratios of 1:2:3, according to the chemical formula of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x, and sintered to create a rhombic perovskite structure. The sintered mixture is powdered again, with added powdered amounts of Y.sub.2 O.sub.3 and powdered metallic Cu, and sintered. The sintered product is used as the source for an electron beam evaporator. In a second embodiment the (Bi.Sr.Ca.Cu.O) compound is formed into a sintered pellet which is composed of a mixture of one part of BiO, 3-15 parts of SrCO.sub.3, 4-30 parts of CaCO.sub.3, and 2-5 parts of CuO, in atomic ratios of Bi, Sr, Ca and Cu.

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Kawasaki, Japan

Naoki Awaji